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SAWANO Kentarou

Profile	Research field	Research achievement	Educational achievement	Social contribution achievement

　

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Books etc
No.	Title	Autour Type	Publisher	Publication date	Range	ISBN
1	Silicon germanium (SiGe) nanostructures	Joint Work	Woodhead Publishing	2011		9781845696894

　

Published Papers
No.	Ｔitle	Journal	Vol	No	Start Page	End Page	Publication date	DOI	Referee
1	Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers	AIP Advances	13	7			Jul. 1, 2023	https://doi.org/10.1063/5.01554171
2	Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures	Materials Science in Semiconductor Processing	161		107476	107476	Jul. 2023	https://doi.org/10.1016/j.mssp.2023.1074761	Refereed
3	Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning	Applied Physics Express	16	1	015502	015502	Jan. 1, 2023	https://doi.org/10.35848/1882-0786/aca7511	Refereed
4	Fabrication of branch-like bridges based on Ge-on-Si (110) and observation of resonant light emission	ECS Transactions	109	4	297	302	Sep. 30, 2022	https://doi.org/10.1149/10904.0297ecst1	Refereed
5	Fabrication of Thick SiGe／Ge Multiple Quantum Wells on Ge-on-Si and Their Optical Properties	ECS Transactions	109	4	289	295	Sep. 30, 2022	https://doi.org/10.1149/10904.0289ecst1	Refereed
6	Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes	Journal of Crystal Growth	594		126766-1	126766-5	Sep. 2022	https://doi.org/10.1016/j.jcrysgro.2022.1267661	Refereed
7	Effect of Strain on Room-Temperature Spin Transport in Si0.1Ge0.9	Physical Review Applied	18	2	024005		Aug. 2, 2022	https://doi.org/10.1103/physrevapplied.18.0240051	Refereed
8	Temperature dependence of two-terminal local magnetoresistance in Co-based Heusler alloy/Ge lateral spin-valve devices	IEEE Transactions on Magnetics	58	8	4100505	4100505	Aug. 2022	https://doi.org/10.1109/tmag.2022.31453931	Refereed
9	Fabrication of SiGe/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission	Journal of Crystal Growth	590		126682		Apr. 2022	https://doi.org/10.1016/j.jcrysgro.2022.1266821	Refereed
10	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor	Physical Review B	105	19	195308		Apr. 2022	https://doi.org/10.1103/PhysRevB.105.1953081	Refereed
11	Mechanism of crack formation in strained SiGe(111) layers	Journal of Crystal Growth	589		126672		Apr. 2022	https://doi.org/10.1016/j.jcrysgro.2022.1266721	Refereed
12	Strain engineering of heteroepitaxial SiGe/Ge on Si with various crystal orientations	ECS Transactions	109	4	197	204	2022	https://doi.org/10.1149/10904.0197ecst1	Refereed
13	Growth of high quality Ge layers on Co2FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices	応用物理学会春季学術講演会講演予稿集(CD-ROM)	69th				2022
14	Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi	Applied Physics Letters	119	19	192404	192404	Nov. 8, 2021	https://doi.org/10.1063/5.00615041	Refereed
15	Experimental extraction of donor-driven spin relaxation in n -type nondegenerate germanium	Physical Review B	104	11			Sep. 1, 2021	https://doi.org/10.1103/physrevb.104.1153011	Refereed
16	Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors	Journal of Applied Physics	129	18			May. 14, 2021	https://doi.org/10.1063/5.00483211	Refereed
17	Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and postannealing	Applied Physics Express	14	4			Apr. 2021	https://doi.org/10.35848/1882-0786/abf0df1	Refereed
18	Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L2<inf>1</inf>-ordered Co<inf>2</inf>MnSi	Applied Physics Letters	118	16			Apr. 2021	https://doi.org/10.1063/5.00452331	Refereed
19	High Q-factor Si microdisk resonators in the mid-infrared	JSAP Annual Meetings Extended Abstracts	2021.1		1125	1125	Feb. 26, 2021	https://doi.org/10.11470/jsapmeeting.2021.1.0_11251
20	A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si	Applied Physics Express	14	2			Feb. 2021	https://doi.org/10.35848/1882-0786/abd4c51	Refereed
21	High quality Ge on epitaxial Co2FeSi for semiconductor based vertical spin devices	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	82nd				2021
22	Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures	NPG Asia Materials	12	1			Dec. 1, 2020	https://doi.org/10.1038/s41427-020-0228-51	Refereed
23	Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe	npj Quantum Information	6	1			Dec. 1, 2020	https://doi.org/10.1038/s41534-020-0276-21	Refereed
24	Author Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (npj Quantum Information, (2020), 6, 1, (40), 10.1038/s41534-020-0276-2)	npj Quantum Information	6	1			Dec. 1, 2020	https://doi.org/10.1038/s41534-020-00298-71	Refereed
25	Thermoelectric Si<inf>1-</inf><inf>x</inf>Ge<inf>x</inf>and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators	Applied Physics Letters	117	14			Oct. 5, 2020	https://doi.org/10.1063/5.00238201	Refereed
26	Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates	Materials Science in Semiconductor Processing	117				Oct. 2020	https://doi.org/10.1016/j.mssp.2020.1051531	Refereed
27	Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe<inf>2</inf>Monolayers by Thermal Treatment	ACS Applied Electronic Materials	2	9	2739	2744	Sep. 22, 2020	https://doi.org/10.1021/acsaelm.0c004521	Refereed
28	Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si	Materials Science in Semiconductor Processing	115				Aug. 2020	https://doi.org/10.1016/j.mssp.2020.1051041	Refereed
29	Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices	Materials Science in Semiconductor Processing	113				Jul. 2020	https://doi.org/10.1016/j.mssp.2020.1050461	Refereed
30	Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements	Materials Science in Semiconductor Processing	113				Jul. 2020	https://doi.org/10.1016/j.mssp.2020.1050521	Refereed
31	High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces	ACS Applied Materials and Interfaces	12	22	25428	25434	Jun. 3, 2020	https://doi.org/10.1021/acsami.0c049821	Refereed
32	Suppression of Donor-Driven Spin Relaxation in Strained Si0.1Ge0.9	Physical Review Applied	13	5			May. 2020	https://doi.org/10.1103/PhysRevApplied.13.0540251	Refereed
33	Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots	Japanese Journal of Applied Physics	59	SF	1	5	Apr. 2020	https://doi.org/10.7567/1347-4065/ab5b581	Refereed
34	Hole mobility enhancement observed in (110)-oriented strained Si	Japanese Journal of Applied Physics	59	SG			Apr. 2020	https://doi.org/10.7567/1347-4065/ab65911	Refereed
35	Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/Six Ge1-x Quantum Dot	Physical Review Applied	13	3			Feb. 2020	https://doi.org/10.1103/PhysRevApplied.13.0340681	Refereed
36	Strain engineering of Si/Ge heterostructures on Ge-on-Si platform	ECS Transactions	98	5	267	276	2020	https://doi.org/10.1149/09805.0267ecst1	Refereed
37	Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control	ECS Transactions	98	5	513	518	2020	https://doi.org/10.1149/09805.0513ecst1	Refereed
38	Increased critical thickness for strained SiGe on Ge-on-Si(111)	ECS Transactions	98	5	499	503	2020	https://doi.org/10.1149/09805.0499ecst1	Refereed
39	Engineering strain, defects and electronic properties of (110)-oriented strained Si	ECS Transactions	98	5	277	290	2020	https://doi.org/10.1149/09805.0277ecst1	Refereed
40	Semiballistic thermal conduction in polycrystalline SiGe nanowires	Applied Physics Letters	115	25			Dec. 16, 2019	https://doi.org/10.1063/1.51306591	Refereed
41	High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity	Applied Physics Letters	115	18	182104		Oct. 28, 2019	https://doi.org/10.1063/1.51269101	Refereed
42	Suspended Si waveguides with subwavelength grating cladding in the mid-infrared	JSAP Annual Meetings Extended Abstracts	2019.2		1209	1209	Sep. 4, 2019	https://doi.org/10.11470/jsapmeeting.2019.2.0_12091
43	Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures	Materials Today Energy	13		56	63	Sep. 2019	https://doi.org/10.1016/j.mtener.2019.04.0141	Refereed
44	Critical thickness of strained Si<inf>1-x</inf>Ge<inf>x</inf> on Ge(111) and Ge-on-Si(111)	Applied Physics Express	12	8	081005		Aug. 1, 2019	https://doi.org/10.7567/1882-0786/ab2db81	Refereed
45	Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices	Physical Review B	100	2	024431		Jul. 29, 2019	https://doi.org/10.1103/PhysRevB.100.0244311	Refereed
46	Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts	Applied Physics Express	12	3	033002-1	033002-4	Mar. 2019	https://doi.org/10.7567/1882-0786/ab02521	Refereed
47	Effect of strain on the binding energy of Ge 2p and 3d core level	Semiconductor Science and Technology	34	1			Jan. 2019	https://doi.org/10.1088/1361-6641/aaf3ee1	Refereed
48	Fabrication of Ge MOS with low interface trap density by ALD of Al<inf>2</inf>O<inf>3</inf> on epitaxially grown Ge	Semiconductor Science and Technology	34	1	014004		Jan. 2019	https://doi.org/10.1088/1361-6641/aaf19b1	Refereed
49	Conduction type control of ge-on-insulator: Combination of smart-CutTM and defect elimination	ECS Transactions	93	1	73	77	2019	https://doi.org/10.1149/09301.0073ecst1	Refereed
50	Structural, Optical and Electrical Characterization of Heterojunction Rib-Si Solar Cells	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC	-	-	2032	2035	Nov. 26, 2018	https://doi.org/10.1109/PVSC.2018.85482351	Refereed
51	Study on Al<inf>2</inf>O<inf>3</inf>/Ge interface formed by ALD directly on epitaxial Ge	Semiconductor Science and Technology	33	12	124020		Nov. 20, 2018	https://doi.org/10.1088/1361-6641/aaec511	Refereed
52	Stability of strain in Si layers formed on SiGe/Si(110) heterostructures	Semiconductor Science and Technology	33	12	124016		Nov. 15, 2018	https://doi.org/10.1088/1361-6641/aaeb101	Refereed
53	Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)	Semiconductor Science and Technology	33	12	124008		Oct. 26, 2018	https://doi.org/10.1088/1361-6641/aae5751	Refereed
54	Effects of post annealing on in-situ n-doped Ge-on-Si	Semiconductor Science and Technology	33	12	124006		Oct. 25, 2018	https://doi.org/10.1088/1361-6641/aae62e1	Refereed
55	Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device	Semiconductor Science and Technology	33	11	114009		Oct. 16, 2018	https://doi.org/10.1088/1361-6641/aae34f1	Refereed
56	Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices	Physical Review B	98	11			Sep. 17, 2018	https://doi.org/10.1103/PhysRevB.98.1153041	Refereed
57	Spin transport and relaxation in germanium	Journal of Physics D: Applied Physics	51	39			Aug. 24, 2018	https://doi.org/10.1088/1361-6463/aad5421	Refereed
58	Probing thermal phonon mean free path using phononic crystal nanostructures	Journal of Physics: Conference Series	1052	1			Jul. 26, 2018	https://doi.org/10.1088/1742-6596/1052/1/0121231	Refereed
59	Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures	AIP Advances	8	7			Jul. 1, 2018	https://doi.org/10.1063/1.50113971	Refereed
60	Pure spin current transport in a SiGe alloy	Applied Physics Express	11	5			May. 2018	https://doi.org/10.7567/APEX.11.0530061	Refereed
61	Growth and characterization of low composition Ge, x in epi-Si<inf>1-x</inf>Gex (x 10%) active layer for fabrication of hydrogenated bottom solar cell	Journal of Physics D: Applied Physics	51	18			Apr. 2018	https://doi.org/10.1088/1361-6463/aab80d1	Refereed
62	Resonant light emission from uniaxially tensile-strained Ge microbridges	Japanese Journal of Applied Physics	57	4			Apr. 2018	https://doi.org/10.7567/JJAP.57.04FH101	Refereed
63	Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy	Journal of Applied Physics	123	16			Apr. 2018	https://doi.org/10.1063/1.50040771	Refereed
64	Spin absorption effect at ferromagnet/Ge Schottky-tunnel contacts	Materials	11	1			Jan. 17, 2018	https://doi.org/10.3390/ma110101501	Refereed
65	Development of semiconductor sensor as a use for pulsed electro-acoustic method	Proceedings of the International Symposium on Electrical Insulating Materials	2		601	604	Dec. 4, 2017	https://doi.org/10.23919/ISEIM.2017.81665611	Refereed
66	Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation	Journal of Crystal Growth	477		197	200	Nov. 1, 2017	https://doi.org/10.1016/j.jcrysgro.2017.05.0221	Refereed
67	Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion	Materials Science in Semiconductor Processing	70		83	85	Nov. 1, 2017	https://doi.org/10.1016/j.mssp.2016.07.0251	Refereed
68	Thermal stability of compressively strained Si/relaxed Si<inf>1-x</inf>C<inf>x</inf> heterostructures formed on Ar ion implanted Si (100) substrates	Materials Science in Semiconductor Processing	70		127	132	Nov. 1, 2017	https://doi.org/10.1016/j.mssp.2016.11.0241	Refereed
69	Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures	Journal of Crystal Growth	477		131	134	Nov. 1, 2017	https://doi.org/10.1016/j.jcrysgro.2017.03.0081	Refereed
70	Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation	Japanese Journal of Applied Physics	56	11			Nov. 2017	https://doi.org/10.7567/JJAP.56.1103131	Refereed
71	Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements	Applied Physics Express	10	9			Sep. 2017	https://doi.org/10.7567/APEX.10.0930011	Refereed
72	Spin Transport and Relaxation up to 250 K in Heavily Doped n -Type Ge Detected Using Co2FeAl0.5Si0.5 Electrodes SPIN TRANSPORT and RELAXATION UP to 250 K in Y. FUJITA et al.	Physical Review Applied	8	1			Jul. 10, 2017	https://doi.org/10.1103/PhysRevApplied.8.0140071	Refereed
73	Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE	Journal of Crystal Growth	468		625	629	Jun. 15, 2017	https://doi.org/10.1016/j.jcrysgro.2016.12.0761	Refereed
74	Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si<inf>1−x</inf>C<inf>x</inf> heterostructures using the defect control by ion implantation technique	Journal of Crystal Growth	468		601	604	Jun. 15, 2017	https://doi.org/10.1016/j.jcrysgro.2016.12.0651	Refereed
75	Thermoelectric Properties of Epitaxial β-FeSi<inf>2</inf> Thin Films on Si(111) and Approach for Their Enhancement	Journal of Electronic Materials	46	5	3235	3241	May. 1, 2017	https://doi.org/10.1007/s11664-016-4997-01	Refereed
76	Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy	Japanese Journal of Applied Physics	56	5			May. 2017	https://doi.org/10.7567/JJAP.56.0513011	Refereed
77	Large impact of impurity concentration on spin transport in degenerate n -Ge	Physical Review B	95	16			Apr. 2017	https://doi.org/10.1103/PhysRevB.95.1613041	Refereed
78	Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings	Optics Express	25	6	6550	6560	Mar. 20, 2017	https://doi.org/10.1364/OE.25.0065501	Refereed
79	INDEPENDENT CONTROL OF PHONON AND ELECTRON TRANSPORT IN SI-BASED NANOARCHITECTURES WITH EPITAXIAL GE NANODOTS	Proceedings of 1st Asian Conference onThermal Sciences 2017 (ACTS 2017)			1	3	Mar. 2017		Refereed
80	Resonant light emission from highly n-doped germanium-on-insulator microdisks with circular bragg grating	Optics InfoBase Conference Papers	Part F41-CLEO_SI 2017		1	2	2017	https://doi.org/10.1364/CLEO_SI.2017.STh3N.71	Refereed
81	Temperature-independent spin relaxation in heavily doped n -type germanium	Physical Review B	94	24			Dec. 5, 2016	https://doi.org/10.1103/PhysRevB.94.2453021	Refereed
82	Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum	Applied Physics Letters	109	17			Oct. 24, 2016	https://doi.org/10.1063/1.49661901	Refereed
83	Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator	Thin Solid Films	613		24	28	Aug. 1, 2016	https://doi.org/10.1016/j.tsf.2015.11.0201	Refereed
84	Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells	Progress in Photovoltaics: Research and Applications	24	6	774	780	Jun. 1, 2016	https://doi.org/10.1002/pip.27261	Refereed
85	A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes	Japanese Journal of Applied Physics	55	6			Jun. 2016	https://doi.org/10.7567/JJAP.55.0630011	Refereed
86	Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation	Applied Physics Express	9	5			May. 2016	https://doi.org/10.7567/APEX.9.0521011	Refereed
87	Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials	Scientific Reports	6				Mar. 14, 2016	https://doi.org/10.1038/srep228381	Refereed
88	Compressively strained Si/Si1%xCx heterostructures formed on Ar ion implanted Si(100) substrates	Japanese Journal of Applied Physics	55	3			Mar. 2016	https://doi.org/10.7567/JJAP.55.0313021	Refereed
89	Suppression of segregation of the phosphorus ?-doping layer in germanium by incorporation of carbon	Japanese Journal of Applied Physics	55	3			Mar. 2016	https://doi.org/10.7567/JJAP.55.0313041	Refereed
90	Compressively strained Si/Si	Jpn. J. Appl. Phys.	55	3	31302	31302	Feb. 1, 2016	https://doi.org/10.7567/JJAP.55.0313021
91	Nanoscale heat transport in single-crystalline Si and amorphous SiGe phononic crystals	2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)					2016		Refereed
92	Straining of group IV semiconductor materials for bandgap and mobility engineering	ECS Transactions	75	4	191	197	2016	https://doi.org/10.1149/07504.0191ecst1	Refereed
93	Anisotropic strain introduction into Si/Ge hetero structures	ECS Transactions	75	8	563	569	2016	https://doi.org/10.1149/07508.0563ecst1	Refereed
94	Enhanced light emission from N-doped Ge microdisks by thermal oxidation	ECS Transactions	75	8	689	693	2016	https://doi.org/10.1149/07508.0689ecst1	Refereed
95	High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks	Proceedings of SPIE - The International Society for Optical Engineering	9891				2016	https://doi.org/10.1117/12.22295551	Refereed
96	Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium	Applied Physics Letters	107	13			Sep. 28, 2015	https://doi.org/10.1063/1.49319391	Refereed
97	Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion	Applied Physics Express	8	9			Sep. 1, 2015	https://doi.org/10.7567/APEX.8.0921011	Refereed
98	Resonant light emission from N-doped germanium-on-insulator microdisks at room-temperature	IEEE International Conference on Group IV Photonics GFP			231	232	Nov. 18, 2014	https://doi.org/10.1109/Group4.2014.69619391	Refereed
99	Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates	Journal of Crystal Growth	401		758	761	Sep. 1, 2014	https://doi.org/10.1016/j.jcrysgro.2014.02.0141	Refereed
100	Cubic Rashba spin-orbit interaction of a two-dimensional hole gas in a strained- Ge/SiGe quantum well	Physical Review Letters	113	8			Aug. 21, 2014	https://doi.org/10.1103/PhysRevLett.113.0866011	Refereed
101	Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment	Applied Physics Letters	104	17	172109		Apr. 2014	https://doi.org/10.1063/1.48750161	Refereed
102	Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer	Thin Solid Films	557	-	76	79	Apr. 2014	https://doi.org/10.1016/j.tsf.2013.10.0741	Refereed
103	Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy	Thin Solid Films	557	-	66	69	Apr. 2014	https://doi.org/10.1016/j.tsf.2013.10.0821	Refereed
104	Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe<inf>3</inf>Si/n+-Ge Schottky-tunnel contacts	Thin Solid Films	557	-	382	385	Apr. 2014	https://doi.org/10.1016/j.tsf.2013.08.1201	Refereed
105	Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co<inf>2</inf>FeSi electrodes	Applied Physics Express	7	3	033002		Mar. 2014	https://doi.org/10.7567/APEX.7.0330021	Refereed
106	Resonant photoluminescence from Ge microdisks on Ge-on-insulator	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014			135	136	2014	https://doi.org/10.1109/ISTDM.2014.68746701	Refereed
107	Tensile-strained, heavily n-doped germanium-on-insulator for light emitting devices on silicon	Conference on Lasers and Electro-Optics Europe - Technical Digest	2014-January				2014	https://doi.org/10.1364/cleo_si.2014.sm4h.31	Refereed
108	Detection of effect of strain on the valence band structure of SiGe by HXPES with high spatial resolution	ECS Transactions	64	6	431	439	2014	https://doi.org/10.1149/06406.0431ecst1	Refereed
109	AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS	Journal of Electron Spectroscopy and Related Phenomena	190	PART B	295	301	Oct. 2013	https://doi.org/10.1016/j.elspec.2013.06.0101	Refereed
110	Qualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe<inf>3</inf>Si/n+-Ge Schottky-tunnel contacts	Journal of Applied Physics	113	18	183713		May. 14, 2013	https://doi.org/10.1063/1.48043201	Refereed
111	Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal-oxide-semiconductor field effect transistor structure (invited)	Journal of Applied Physics	113	17	17C501		May. 7, 2013	https://doi.org/10.1063/1.47935011	Refereed
112	An ultra-thin buffer layer for Ge epitaxial layers on Si	Applied Physics Letters	102	12	121908		Mar. 25, 2013	https://doi.org/10.1063/1.47986591	Refereed
113	Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe<inf>3</inf>Si/Si(111) contact	Journal of Applied Physics	113	1	013916		Jan. 7, 2013	https://doi.org/10.1063/1.47730721	Refereed
114	Formation of compressively strained Si/Si<inf>1-x</inf>C <inf>x</inf>/Si(100) heterostructures using gas-source molecular beam epitaxy	Journal of Crystal Growth	362	1	276	281	Jan. 1, 2013	https://doi.org/10.1016/j.jcrysgro.2011.12.0841	Refereed
115	Formation of compressively strained SiGe/Si(110) heterostructures and their characterization	Journal of Crystal Growth	362	1	282	287	Jan. 1, 2013	https://doi.org/10.1016/j.jcrysgro.2011.12.0821	Refereed
116	Gas-source MBE growth of strain-relaxed Si<inf>1-x</inf>C<inf>x</inf> on Si(100) substrates	Journal of Crystal Growth	378	-	212	217	2013	https://doi.org/10.1016/j.jcrysgro.2012.12.1521	Refereed
117	Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase	Journal of Physics: Conference Series	456	1			2013	https://doi.org/10.1088/1742-6596/456/1/0120271	Refereed
118	On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique	Journal of Crystal Growth	378	-	251	253	2013	https://doi.org/10.1016/j.jcrysgro.2012.12.1001	Refereed
119	Surface segregation behavior of B, Ga, Sb, and as dopant atoms on Ge(100) and Ge(111) examined with a first-principles method	Journal of Physics: Conference Series	417	1			2013	https://doi.org/10.1088/1742-6596/417/1/0120081	Refereed
120	Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon	Applied Physics Letters	101	23	232404		Dec. 3, 2012	https://doi.org/10.1063/1.47692211	Refereed
121	One Year Stay in Munchen	J. Surf. Sci. Soc. Jpn.	33	11	645	646	Nov. 10, 2012	https://doi.org/10.1380/jsssj.33.6451
122	Acceptor-like states in SiGe alloy related to point defects induced by Si+ ion implantation	Japanese Journal of Applied Physics	51	10	105801		Oct. 2012	https://doi.org/10.1143/JJAP.51.1058011	Refereed
123	Room-temperature observation of size effects in photoluminescence of Si <inf>0.8</inf>Ge <inf>0.2</inf>/Si nanocolumns prepared by neutral beam etching	Applied Physics Express	5	8	082004		Aug. 2012	https://doi.org/10.1143/APEX.5.0820041	Refereed
124	In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system	Physical Review B - Condensed Matter and Materials Physics	86	4	045310		Jul. 13, 2012	https://doi.org/10.1103/PhysRevB.86.0453101	Refereed
125	In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system	PHYSICAL REVIEW B	86	4			Jul. 2012	https://doi.org/10.1103/PhysRevB.86.0453101	Refereed
126	Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures	Applied Physics Letters	100	22	40	41	May. 28, 2012	https://doi.org/10.1063/1.47236901	Refereed
127	Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts	Journal of Applied Physics	111	7	07C503		Apr. 2012	https://doi.org/10.1063/1.36709851	Refereed
128	Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well	Journal of Applied Physics	111	7	073715		Apr. 2012	https://doi.org/10.1063/1.37024641	Refereed
129	Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel	Physical Review B - Condensed Matter and Materials Physics	85	3	035320		Jan. 26, 2012	https://doi.org/10.1103/PhysRevB.85.0353201	Refereed
130	Formation of tensilely strained germanium-on-insulator	Applied Physics Express	5	1	015701		Jan. 2012	https://doi.org/10.1143/APEX.5.0157011	Refereed
131	SiGe spintronics with single-crystalline ferromagnetic Schottky-tunnel contacts	ECS Transactions	50	10	235	243	2012	https://doi.org/10.1149/05010.0235ecst1	Refereed
132	Formation of uniaxially strained Si/Ge channels on SiGe buffers strain-controlled with selective ion implantation	ECS Transactions	50	9	815	820	2012	https://doi.org/10.1149/05009.0815ecst1	Refereed
133	Fabrication and characterization of Si/SiGe quantum dots with capping gate	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012					2012	https://doi.org/10.1109/SNW.2012.62432911	Refereed
134	Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings			40	41	2012	https://doi.org/10.1109/ISTDM.2012.62224471	Refereed
135	High efficiency quantum dot solar cells using 2-dimensional 6.4-nm-diameter Si nanodisk with SiC interlayer	Conference Record of the IEEE Photovoltaic Specialists Conference			3195	3199	2012	https://doi.org/10.1109/PVSC.2012.63182571	Refereed
136	AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC interfaces	電子情報通信学会技術研究報告	112	263(SDM2012 89-97)			2012
137	Mechanism of Fermi level pinning at metal/germanium interfaces	Physical Review B - Condensed Matter and Materials Physics	84	20	205301		Nov. 1, 2011	https://doi.org/10.1103/PhysRevB.84.2053011	Refereed
138	Mechanism of Fermi level pinning at metal/germanium interfaces	PHYSICAL REVIEW B	84	20			Nov. 2011	https://doi.org/10.1103/PhysRevB.84.2053011	Refereed
139	Study of HfO_2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy	Technical report of IEICE. SDM	111	249	37	41	Oct. 13, 2011
140	Electric-field control of spin accumulation signals in silicon at room temperature	Applied Physics Letters	99	13	132511		Sep. 26, 2011	https://doi.org/10.1063/1.36431411	Refereed
141	Line width dependence of anisotropic strain state in sige films induced by selective ion implantation	Applied Physics Express	4	9	095701		Sep. 2011	https://doi.org/10.1143/APEX.4.0957011	Refereed
142	Self-diffusion in compressively strained Ge	JOURNAL OF APPLIED PHYSICS	110	3	034906		Aug. 2011	https://doi.org/10.1115/1.40044621	Refereed
143	Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon	Physical Review B - Condensed Matter and Materials Physics	84	4	045204		Jul. 8, 2011	https://doi.org/10.1103/PhysRevB.84.0452041	Refereed
144	Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact	Applied Physics Letters	99	1	012113		Jul. 4, 2011	https://doi.org/10.1063/1.36074801	Refereed
145	Metallic behavior of cyclotron relaxation time in two-dimensional systems	Physical Review Letters	106	19	196404		May. 11, 2011	https://doi.org/10.1103/PhysRevLett.106.1964041	Refereed
146	Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels	Microelectronic Engineering	88	4	465	468	Apr. 2011	https://doi.org/10.1016/j.mee.2010.11.0181	Refereed
147	28aHD-1 Consideration about Schottky gate of Si/SiGe quantum dot	Meeting abstracts of the Physical Society of Japan	66	1	723	723	Mar. 3, 2011
148	Strain engineering of silicon-germanium (SiGe) virtual substrates	Silicon-Germanium (SiGe) Nanostructures			147	170	Feb. 2011	https://doi.org/10.1533/9780857091420.2.1471	Refereed
149	Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon	Applied Physics Express	4	2	021302		Feb. 2011	https://doi.org/10.1143/APEX.4.0213021	Refereed
150	Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping	Materials Research Society Symposium Proceedings	1305		30	36	2011	https://doi.org/10.1557/opl.2011.1451	Refereed
151	Cyclotron resonance in the two-dimensional metallic phase of Si quantum wells	Journal of Physics: Conference Series	334	1			2011	https://doi.org/10.1088/1742-6596/334/1/0120571	Refereed
152	Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems	Semiconductor Science and Technology	26	5	055004		2011	https://doi.org/10.1088/0268-1242/26/5/0550041	Refereed
153	XPS study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS	ECS Transactions	41	7	137	146	2011	https://doi.org/10.1149/1.36332931	Refereed
154	Cyclotron resonance of two dimensional electrons near the metal-insulator transition	AIP Conference Proceedings	1399		277	278	2011	https://doi.org/10.1063/1.36663611	Refereed
155	Ultrashallow Ohmic contacts for n-type Ge by Sb δ -doping	Applied Physics Letters	97	16	162108		Oct. 18, 2010	https://doi.org/10.1063/1.35035871	Refereed
156	Comparison of nonlocal and local magnetoresistance signals in laterally fabricated Fe3Si/Si spin-valve devices	Applied Physics Express	3	9	093001		Sep. 2010	https://doi.org/10.1143/APEX.3.0930011	Refereed
157	24aWQ-2 Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure	Meeting abstracts of the Physical Society of Japan	65	2	645	645	Aug. 18, 2010
158	24aWQ-3 Fabrication and evaluation of Si/SiGe quantum dot with Pd schottky gate	Meeting abstracts of the Physical Society of Japan	65	2	645	645	Aug. 18, 2010
159	Excitonic Aharonov-Bohm effect in isotopically pure 70Ge/Si self-assembled type-II quantum dots	Physical Review B - Condensed Matter and Materials Physics	82	7	073306		Aug. 17, 2010	https://doi.org/10.1103/PhysRevB.82.0733061	Refereed
160	Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique	Journal of Applied Physics	107	10	103509		May. 15, 2010	https://doi.org/10.1063/1.33746881	Refereed
161	Quantum transport and cyclotron resonance study of Ge/SiGe quantum wells in high magnetic fields	Journal of Low Temperature Physics	159	1-2	222	225	Apr. 2010	https://doi.org/10.1007/s10909-009-0122-61	Refereed
162	20pHV-3 Cyclotron resonance in the two dimensional metallic phase of Si/SiGe	Meeting abstracts of the Physical Society of Japan	65	1	702	702	Mar. 1, 2010
163	Formation of uniaxially strained SiGe by selective ion implantation technique	Thin Solid Films	518	9	2454	2457	Feb. 26, 2010	https://doi.org/10.1016/j.tsf.2009.09.1571	Refereed
164	Landau level crossing and pseudospin phase transitions in Si quantum wells	Physica E: Low-Dimensional Systems and Nanostructures	42	4	1018	1021	Feb. 2010	https://doi.org/10.1016/j.physe.2009.11.0271	Refereed
165	Cyclotron resonance of two-dimensional electrons in a Si quantum well	Physica E: Low-Dimensional Systems and Nanostructures	42	4	1184	1187	Feb. 2010	https://doi.org/10.1016/j.physe.2009.11.0751	Refereed
166	Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation	Thin Solid Films	518	6 SUPPL. 1	S162	S164	Jan. 1, 2010	https://doi.org/10.1016/j.tsf.2009.10.0791	Refereed
167	CMP for high mobility strained Si/Ge channels	Materials Research Society Symposium Proceedings	1157		147	156	2010		Refereed
168	Study of HfO<inf>2</inf>/Si/strained-Ge/SiGe using angle resolved X-ray photoelectron spectroscopy	ECS Transactions	33	3	467	472	2010	https://doi.org/10.1149/1.34816351	Refereed
169	Electrical detection of spin transport in Si using high-quality Fe3Si/Si Schottky tunnel contacts	Journal of the Magnetics Society of Japan	34	3	316	322	2010	https://doi.org/10.3379/msjmag.1003R0411	Refereed
170	Optical anisotropies of Si grown on step-graded SiGe(110) layers	Applied Physics Letters	96	9	091904		2010	https://doi.org/10.1063/1.33398811	Refereed
171	Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon	Physical Review B - Condensed Matter and Materials Physics	80	20	205206		Nov. 24, 2009	https://doi.org/10.1103/PhysRevB.80.2052061	Refereed
172	Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates	Solid-State Electronics	53	10	1135	1143	Oct. 2009	https://doi.org/10.1016/j.sse.2009.05.0101	Refereed
173	Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well	Physical Review B - Condensed Matter and Materials Physics	79	24	241302(R)		Jun. 2, 2009	https://doi.org/10.1103/PhysRevB.79.2413021	Refereed
174	Local control of strain in SiGe by ion-implantation technique	Journal of Crystal Growth	311	3	806	808	Jan. 15, 2009	https://doi.org/10.1016/j.jcrysgro.2008.09.0991	Refereed
175	Strain relaxation mechanisms in step-graded SiGe/Si(1 1 0) heterostructures grown by gas-source MBE at high temperatures	Journal of Crystal Growth	311	3	819	824	Jan. 15, 2009	https://doi.org/10.1016/j.jcrysgro.2008.09.0641	Refereed
176	Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (1 1 0) Si substrates	Journal of Crystal Growth	311	3	809	813	Jan. 15, 2009	https://doi.org/10.1016/j.jcrysgro.2008.09.0611	Refereed
177	Structural and transport properties of strained SiGe grown on V-groove patterned Si(1 1 0) substrates	Journal of Crystal Growth	311	3	814	818	Jan. 15, 2009	https://doi.org/10.1016/j.jcrysgro.2008.09.0621	Refereed
178	Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method	Journal of Crystal Growth	311	3	825	828	Jan. 15, 2009	https://doi.org/10.1016/j.jcrysgro.2008.09.1001	Refereed
179	Well-width dependence of valley splitting in Si/SiGe quantum wells	Applied Physics Letters	95	22	222109		2009	https://doi.org/10.1063/1.32705391	Refereed
180	Probing the behaviors of point defects in silicon and germanium using isotope superlattices	ECS Transactions	25	3	51	54	2009	https://doi.org/10.1149/1.32043931	Refereed
181	Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices	Journal of Applied Physics	105	1	013504		2009	https://doi.org/10.1063/1.30543251	Refereed
182	Electrical injection and detection of spin-polarized electrons in silicon through an Fe<inf>3</inf> Si/Si Schottky tunnel barrier	Applied Physics Letters	94	18	182105		2009	https://doi.org/10.1063/1.31302111	Refereed
183	Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures	Applied Physics Letters	95	12	122109		2009	https://doi.org/10.1063/1.32299981	Refereed
184	Introduction of uniaxial strain into Si/Ge heterostructures by selective ion implantation	Applied Physics Express	1	12	1214011	1214013	Dec. 2008	https://doi.org/10.1143/APEX.1.1214011	Refereed
185	Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique	Thin Solid Films	517	1	353	355	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.1081	Refereed
186	Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere	Thin Solid Films	517	1	232	234	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.0171	Refereed
187	Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials	Thin Solid Films	517	1	14	16	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.0441	Refereed
188	Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer	Thin Solid Films	517	1	235	238	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.1301	Refereed
189	Characterizations of polycrystalline SiGe films on SiO<inf>2</inf> grown by gas-source molecular beam deposition	Thin Solid Films	517	1	254	256	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.0231	Refereed
190	Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures	Thin Solid Films	517	1	340	342	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.1541	Refereed
191	Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions	Thin Solid Films	517	1	87	89	Nov. 3, 2008	https://doi.org/10.1016/j.tsf.2008.08.1091	Refereed
192	Development of thin SiGe relaxed layers with high-Ge composition by ion Implantation method and application to strained Ge channels	Applied Physics Express	1	8	0814011	0814013	Aug. 2008	https://doi.org/10.1143/APEX.1.0814011	Refereed
193	Si ion implantation into Mg-doped GaN for fabrication of reduced surface field metal-oxide-semiconductor field-effect transistors	Japanese Journal of Applied Physics	47	7 PART 1	5409	5416	Jul. 11, 2008	https://doi.org/10.1143/JJAP.47.54091	Refereed
194	Electronic transport properties of the ising quantum hall ferromagnet in a Si quantum well	Physical Review Letters	101	1	016805		Jul. 2, 2008	https://doi.org/10.1103/PhysRevLett.101.0168051	Refereed
195	Acceptorlike behavior of defects in sige alloys grown by molecular beam epitaxy	Japanese Journal of Applied Physics	47	6 PART 1	4630	4633	Jun. 13, 2008	https://doi.org/10.1143/JJAP.47.46301	Refereed
196	Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a strained Ge quantum well	Applied Physics Express	1	5	0514021	0514023	May. 2008	https://doi.org/10.1143/APEX.1.0514021	Refereed
197	Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature	Physica E: Low-Dimensional Systems and Nanostructures	40	6	1935	1937	Apr. 2008	https://doi.org/10.1016/j.physe.2007.08.1421	Refereed
198	Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures	Physica E: Low-Dimensional Systems and Nanostructures	40	6	2122	2124	Apr. 2008	https://doi.org/10.1016/j.physe.2007.10.0121	Refereed
199	New structure of polycrystalline silicon thin-film transistor with germanium layer in source/drain regions for low-temperature device fabrication	Japanese Journal of Applied Physics	47	3 PART 1	1547	1549	Mar. 14, 2008	https://doi.org/10.1143/JJAP.47.15471	Refereed
200	Valley-splitting edge-channel transport in a Si/SiGe quantum Hall system	Physica E: Low-Dimensional Systems and Nanostructures	40	5	1523	1525	Mar. 2008	https://doi.org/10.1016/j.physe.2007.09.0791	Refereed
201	Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well	Applied Physics Express	1	2	021402		Feb. 2008	https://doi.org/10.1143/APEX.1.0214021	Refereed
202	Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices	Applied Physics Express	1	2	021401		Feb. 2008	https://doi.org/10.1143/APEX.1.0214011	Refereed
203	On effects of gate bias on hole effective mass and mobility in strained-ge channel structures	Applied Physics Express	1	1	011401		Jan. 2008	https://doi.org/10.1143/APEX.1.0114011	Refereed
204	Fabrication of SiGe Strain-Relaxed Thin Layers by Ion Implantation Technique	Bulletin of the Japan Institute of Metals	47	-	209	215	2008	https://doi.org/10.2320/materia.47.2091	Refereed
205	Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion	Applied Physics Letters	93	19	191905		2008	https://doi.org/10.1063/1.30258921	Refereed
206	Strained Si/Ge heterostructures : SiGe virtual substrate and strained Ge channel	16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008			ccxix	cccxxvi	2008	https://doi.org/10.1109/RTP.2008.46905321	Refereed
207	Strain state and thermal stability of strained-si-on-insulator substrates	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	46	11	7294	7296	Nov. 6, 2007	https://doi.org/10.1143/JJAP.46.72941	Refereed
208	Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties	Journal of Crystal Growth	301-302	SPEC. ISS.	339	342	Apr. 2007	https://doi.org/10.1016/j.jcrysgro.2006.11.1441	Refereed
209	Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(1 1 0) substrates by gas-source MBE	Journal of Crystal Growth	301-302	SPEC. ISS.	343	348	Apr. 2007	https://doi.org/10.1016/j.jcrysgro.2006.11.1351	Refereed
210	Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping	Semiconductor Science and Technology	22	1	S63	S67	Jan. 1, 2007	https://doi.org/10.1088/0268-1242/22/1/S151	Refereed
211	Fabrication of SiGe virtual substrates by ion implantation technique	ECS Transactions	11	6	75	89	2007	https://doi.org/10.1149/1.27783671	Refereed
212	Strained Si n -channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique	Applied Physics Letters	90	20	202101		2007	https://doi.org/10.1063/1.27393241	Refereed
213	Spin-dependent nonlocal resistance in a Si SiGe quantum Hall conductor	Physical Review B - Condensed Matter and Materials Physics	75	3	033307		2007	https://doi.org/10.1103/PhysRevB.75.0333071	Refereed
214	Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures	Applied Physics Letters	91	8	082108		2007	https://doi.org/10.1063/1.27737441	Refereed
215	Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping	Applied Physics Letters	88	25	252115		Jun. 19, 2006	https://doi.org/10.1063/1.22156331	Refereed
216	Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate	Thin Solid Films	508	1-2	103	106	Jun. 5, 2006	https://doi.org/10.1016/j.tsf.2005.08.3921	Refereed
217	Strain field and related roughness formation in SiGe relaxed buffer layers	Thin Solid Films	508	1-2	117	119	Jun. 5, 2006	https://doi.org/10.1016/j.tsf.2005.08.4141	Refereed
218	Determination of lattice parameters of SiGe/Si(110) heterostructures	Thin Solid Films	508	1-2	132	135	Jun. 5, 2006	https://doi.org/10.1016/j.tsf.2005.08.4121	Refereed
219	Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures	Thin Solid Films	508	1-2	355	358	Jun. 5, 2006	https://doi.org/10.1016/j.tsf.2005.08.4041	Refereed
220	Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers	Physica E: Low-Dimensional Systems and Nanostructures	32	1-2 SPEC. ISS.	520	523	May. 2006	https://doi.org/10.1016/j.physe.2005.12.1381	Refereed
221	Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system	PHYSICAL REVIEW B	73	12			Mar. 2006	https://doi.org/10.1103/PhysRevB.73.1213041	Refereed
222	Spin dependence of edge-channel transport in siliconbased quantum Hall systems	Physica Status Solidi (C) Current Topics in Solid State Physics	3	12	4251	4254	2006	https://doi.org/10.1002/pssc.2006728051	Refereed
223	Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe	Applied Physics Letters	89	19	192102		2006	https://doi.org/10.1063/1.23850861	Refereed
224	Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system	Physical Review B - Condensed Matter and Materials Physics	73	12	121304		2006	https://doi.org/10.1103/PhysRevB.73.1213041	Refereed
225	Magnetotransport properties of Ge channels with extremely high compressive strain	Applied Physics Letters	89	16	162103		2006	https://doi.org/10.1063/1.23544671	Refereed
226	Thermal stability of strained-SOI (sSQI)	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	2006				2006		Refereed
227	Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	2006	1	S161	S163	2006	https://doi.org/10.1109/istdm.2006.2466061	Refereed
228	Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	2006	-	63	67	2006	https://doi.org/10.1109/istdm.2006.2466091	Refereed
229	Thickness dependence of strain field distribution in SiGe relaxed buffer layers	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	44	12	8445	8447	Dec. 8, 2005	https://doi.org/10.1143/JJAP.44.84451	Refereed
230	Compressive strain dependence of hole mobility in strained Ge channels	Applied Physics Letters	87	19	1	3	Nov. 7, 2005	https://doi.org/10.1063/1.21261141	Refereed
231	Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si <inf>(1-x)</inf>Ge <inf>x</inf> surfaces	Journal of Applied Physics	98	2	023503		Jul. 15, 2005	https://doi.org/10.1063/1.19789681	Refereed
232	Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures	Materials Science in Semiconductor Processing	8	1-3 SPEC. ISS.	177	180	Feb. 2005	https://doi.org/10.1016/j.mssp.2004.09.1001	Refereed
233	Mobility enhancement in strained Ge heterostructures by planarization of SiGe buffer layers grown on Si substrates	Japanese Journal of Applied Physics, Part 2: Letters	44	42-45	L1320	L1322	2005	https://doi.org/10.1143/JJAP.44.L13201	Refereed
234	Transport properties of polycrystalline SiGe thin films grown on SiO <inf>2</inf>	Materials Research Society Symposium Proceedings	829		443	448	2005		Refereed
235	Changes in elastic deformation of strained Si by microfabrication	Materials Science in Semiconductor Processing	8	1-3 SPEC. ISS.	181	185	2005	https://doi.org/10.1016/j.mssp.2004.09.0371	Refereed
236	Corrigendum to ''Changes in elastic deformation of strained si by microfabrication''. [Materials Science in Semiconductor Processing 8 (2005) 181-185] (DOI:10.1016/j.mssp.2004.09.037)	Materials Science in Semiconductor Processing	8	6	652		2005	https://doi.org/10.1016/j.mssp.2006.04.0021	Refereed
237	Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method	Japanese Journal of Applied Physics, Part 2: Letters	44	42-45	L1316	L1319	2005	https://doi.org/10.1143/JJAP.44.L13161	Refereed
238	Quality of SiO <inf>2</inf> and of SiGe formed by oxidation of Si/Si <inf>0.7</inf> Ge <inf>0.3</inf> heterostructure using atomic oxygen at 400 °C	Applied Surface Science	237	1-4	134	138	Oct. 15, 2004	https://doi.org/10.1016/j.apsusc.2004.06.0421	Refereed
239	Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates	Applied Physics Letters	85	13	2514	2516	Sep. 27, 2004	https://doi.org/10.1063/1.17943531	Refereed
240	Strain relaxation and induced defects in SiGe thin films grown on ion-implanted Si substrates	Materials Transactions	45	8	2644	2646	Aug. 2004	https://doi.org/10.2320/matertrans.45.26441	Refereed
241	Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer	Applied Physics Letters	84	15	2802	2804	Apr. 2004	https://doi.org/10.1063/1.16976321	Refereed
242	Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime	Thin Solid Films	451-452	-	604	607	Mar. 22, 2004	https://doi.org/10.1016/j.tsf.2003.11.0271	Refereed
243	Formation of thin SiGe virtual substrates by ion implantation into Si substrates	Applied Surface Science	224	1-4	99	103	Mar. 15, 2004	https://doi.org/10.1016/j.apsusc.2003.08.0931	Refereed
244	Improved photovoltaic cell performance based on Ge islands embedded into the intrinsic layer	Proceedings - Electrochemical Society	7		1067	1076	2004		Refereed
245	Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates	Materials Science in Semiconductor Processing	7	4-6 SPEC. ISS.	389	392	2004	https://doi.org/10.1016/j.mssp.2004.09.0081	Refereed
246	Fabrication of p-i-n Si<inf>0.5</inf>Ge<inf>0.5</inf> photodetctors on SiGe-on-Insulator Substrates	2004 1st IEEE International Conference on Group IV Photonics			61	63	2004		Refereed
247	In-plane strain fluctuation in strained-Si/SiGe heterostructures	Applied Physics Letters	83	21	4339	4341	Nov. 24, 2003	https://doi.org/10.1063/1.16291421	Refereed
248	Enhancement of strain relaxation of SiGe thin layers by pre-ion-implantation into Si substrates	Japanese Journal of Applied Physics, Part 2: Letters	42	7 A	L735	L737	Jul. 1, 2003	https://doi.org/10.1143/jjap.42.l7351	Refereed
249	Stacked Ge islands for photovoltaic applications	Science and Technology of Advanced Materials	4	4	367	370	Jul. 1, 2003	https://doi.org/10.1016/S1468-6996(03)00054-81	Refereed
250	Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning	Journal of the Electrochemical Society	150	7	G376	G379	Jul. 2003	https://doi.org/10.1149/1.15767731	Refereed
251	Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates	Journal of Crystal Growth	251	1-4	685	688	Apr. 2003	https://doi.org/10.1016/S0022-0248(02)02287-X1	Refereed
252	Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures	Journal of Crystal Growth	251	1-4	693	696	Apr. 2003	https://doi.org/10.1016/S0022-0248(02)02286-81	Refereed
253	Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing	Applied Physics Letters	82	3	412	414	Jan. 20, 2003	https://doi.org/10.1063/1.15395571	Refereed
254	Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion	C		2746	2749	2003		Refereed
255	Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	89	1-3	406	409	Feb. 14, 2002	https://doi.org/10.1016/S0921-5107(01)00843-11	Refereed
256	Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy			407	408	2002	https://doi.org/10.1109/MBE.2002.10379311	Refereed
257	Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy			403	404	2002	https://doi.org/10.1109/MBE.2002.10379291	Refereed
258	On the origin of the drastic enhancement of the no-phonon transition in GaAsP/GaP indirect quantum wells with an ultrathin AIP layer	JOURNAL OF THE KOREAN PHYSICAL SOCIETY	39	3	440	442	Sep. 2001		Refereed
259	On the origin of the drastic enhancement of the no-phonon transition in GaAsP/GaP indirect quantum wells with an ultrathin AlP layer	Journal of the Korean Physical Society	39	3	440	442	Sep. 2001		Refereed

　

MISC
No.	Ｔitle	Journal	Vol	No	Start Page	End Page	Publication date
1	Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	83rd				2022
2	Electromechanical properties of hBN/1L-MoS2 nanomechanical resonators	応用物理学会春季学術講演会講演予稿集(CD-ROM)	69th				2022
3	Room temperature EL from strained Ge-on-Si(111) diode structure	応用物理学会春季学術講演会講演予稿集(CD-ROM)	68th				2021
4	Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	82nd				2021
5	Thermal stability of hBN-encapsulated molybdenum ditelluride crystals	応用物理学会春季学術講演会講演予稿集(CD-ROM)	68th				2021
6	Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control	応用物理学会春季学術講演会講演予稿集(CD-ROM)	68th				2021
7	Fabrication of high quality strained SiGe on Ge-on-Si(111) by selective growth	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	81st				2020
8	Metallic MoTe2 formation with a combination of ion implantation and thermal anneal	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	81st				2020
9	Influences of thermal annealing after bonding on GOI fabrication	応用物理学会春季学術講演会講演予稿集(CD-ROM)	67th				2020
10	Effect of thermal anneal on optical properties for hBN-encapsulated MoTe2 monolayers	応用物理学会春季学術講演会講演予稿集(CD-ROM)	67th				2020
11	Removal of interfacial contaminations in hBN/1L-MoTe2 heterostructures by annealing	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	81st				2020
12	Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	81st				2020

　

Conference Activities & Talks
No.	Ｔitle	Conference	Publication date	Promoter	Venue
1	Observation of photoluminous from SiGe/Ge MQW on Ge-on-Si(111)	ISNTT2021	Dec. 2021
2	Strong room-temperature EL emission from Ge-on-Si(111) diodes with ferromagnetic Schottky-tunnel electrodes	ISNTT2021	Dec. 2021
3	Strong resonant light emission in strained Ge microbridges	ISNTT2021	Dec. 2021
4	Strong room-temperature EL emission from Ge-on-Si(111) diodes	21st ICMBE 2021	Sep. 2021
5	Suppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates	21st ICMBE 2021	Sep. 2021
6	Epitaxial growth of strained Si0.2Ge0.8 on Ge microbridge	21st ICMBE 2021	Sep. 2021
7	Room tempetature EL from strained Ge-on-Si(111) diode strctures	EMRS 2021spring meeting	Jun. 2, 2021
8	Michihiro Yamada, Kohei Hamaya and Kentarou Sawano “Suppression of crack formation in strained SiGe layers by patterning of Ge-on-Si substrates	EMRS 2021spring meeting	Jun. 2, 2021
9	Effect of uniaxial strain direction on luminescence properties of strained Ge microbridge structures	EMRS 2021spring meeting	May. 31, 2021
10	High quality Ge on epitaxial Co2FeSi for semiconductor based vertical spin devices	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	2021
11	Engineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si	PRiME 2020	Oct. 2020
12	Increased critical thickness for strained SiGe on Ge-on-Si(111)	PRiME 2020	Oct. 2020
13	Strain engineering of Si/Ge heterostructures on Ge-on-Si platform	PRiME 2020	Oct. 2020
14	Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control	PRiME 2020	Oct. 2020
15	Thermal stability at the interface between ferromagnetic alloys and germanium for semiconductor spintronics devices	PRiME 2020(the joint international meeting of ECS, ECSJ, and KECS)	Oct. 2020
16	Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation	PRiME 2020	Oct. 2020
17	Formation and Evaluation of Al2O3 Layer by Direct ALD on Epitaxial SiGe	PRiME 2020	Oct. 2020
18	Silicon Microdisk Resonators in the Mid-Infrared for On-Chip Gas Sensing	SSDM 2020	Sep. 2020
19	Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices	8th International Symposium on Control of Semiconductor Interfaces(ISCSI-8)	Nov. 2019
20	Optical Interferences in Monolayer Tungsten Disulfide and Tungsten Diselenide Encapsulated by Hexagonal Boron nitride	8th International Symposium on Control of Semiconductor Interfaces	Nov. 2019
21	"Enhanced Photoluminescence from Strained Ge-on-Insulator Surface-Passivated with Hydrogenated Amorphous Si	8th International Symposium on Control of Semiconductor Interfaces	Nov. 2019
22	"Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111)	8th International Symposium on Control of Semiconductor Interfaces	Nov. 2019
23	Thermal stability of mechanically-exfoliated monolayer and few layer MoTe2	8th International Symposium on Control of Semiconductor Interfaces	Nov. 2019
24	Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals	SSDM 2019	Sep. 2019
25	Strain states and critical thickness of Si1-xGex epitaxial layers on Ge-on-Si(111)	ISTDM / ICSI 2019 Conference	Jun. 2019
26	Si/Ge Heterostructures with Various Surface Orientations	EMN Epitaxy	Jun. 2019
27	Spin transport in Ge and SiG	CSRN-Osaka Annual Workshop 2018	Dec. 2018
28	Local magnetoresistance effect at room temperature in Co2FeAlxSi1-x/n-Ge lateral spin-valve devices	One-Day Symposium on Spintronics Properties of Graphene and Related 2D Materials	Nov. 22, 2018
29	Spin transport in a Ge-rich SiGe alloy	2018 European Materials Research Society (E-MRS 2018)	Sep. 2018
30	Probing thermal phonon mean free path using phononic crystal nanostructures	Journal of Physics: Conference Series	Jul. 26, 2018
31	Germanium light source monolithically integrated on Si platform	International Conference on Small Science 2018 (ICSS 2018)	Jul. 4, 2018
32	Strained Ge Optoelectronic Devices Integrated on a Si Platform	Nanotech Malaysia 2018	May. 7, 2018
33	Structural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)	Joint ISTDM / ICSI 2018	May. 2018
34	“CMOS-compatible Germanium Light Sources	233rd ECS Meeting, Seattle	May. 2018
35	Germanium light source monolithically integrated on Si platform	Joint ISTDM / ICSI 2018	May. 2018
36	Electrical spin injection and transport in a SiGe alloy	Joint ISTDM / ICSI 2018	May. 2018
37	Room-temperature magnetoresistance effect in Ge lateral spin valve devices	Joint ISTDM / ICSI 2018	May. 2018
38	Effect of Strain on the Binding Energy of Ge 2p and 3d core level	Joint ISTDM / ICSI 2018	May. 2018
39	Effects of post annealing on in-situ n-doped Ge-on-Si	Joint ISTDM / ICSI 2018	May. 2018
40	Fabrication and evaluation of Ge on Si (110) by using two-step growth method	Joint ISTDM / ICSI 2018	May. 2018
41	Formation of high quality Al2O3/Ge interface by ALD directly on epitaxial Ge	Joint ISTDM / ICSI 2018	May. 2018
42	Fabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge	Joint ISTDM / ICSI 2018	May. 2018
43	Observation of local spin signals at room temperature in germanium lateral devices	INTERMAG 2018	Apr. 2018
44	Ge(111)基板上の歪みSi1-xGex膜成長と臨界膜厚の評価	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Mar. 5, 2018
45	Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurement		Mar. 2018
46	Resonant light emission from highly N-doped germanium-on-insulator microdisks with circular bragg grating	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings	Oct. 25, 2017
47	ゲルマニウム中の電子スピン伝導とスピン緩和	日本磁気学会学術講演概要集	Sep. 5, 2017
48	Controlled doping for Ge based optoelectronic devices	2017 EMN/CC Meeting	Sep. 2017
49	The Resonant Phenomenon in the PL Spectra Measured in the Tensile-Strained Ge Microbridges	2017 International Conference on Solid State Devices and Materials (SSDM)	Sep. 2017
50	組成制御によるSiGe/Si超格子の出力因子増大	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Aug. 25, 2017
51	低RAショットキートンネル接合電極を用いたn‐Ge中の室温スピン伝導検出	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Aug. 25, 2017
52	ナノドット含有Si薄膜の熱電特性に与える熱処理の影響	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Aug. 25, 2017
53	Donor-Induced Spin Relaxation in n-Ge	The 9th International school and conference on Spintech	Jun. 2017
54	Local Magnetoresistance in a Co2FeAl0.5Si0.5/n+-Ge lateral spin valve	The 9th International school and conference on Spintech	Jun. 2017
55	Giant Enhancement of Nonlocal Spin Signals in n-Ge using Co2FeAl0.5Si0.5 Electrodes	The 9th International school and conference on Spintech	Jun. 2017
56	Thermal Phonon MFP Spectrum Probing Using Phononic Crystals	2017 MRS Spring Meeting & Exhibit	May. 2017
57	Resonant light emission from highly n-doped germanium-on-insulator microdisks with circular Bragg grating	2017 Conference on Lasers and Electro-Optics (CLEO: 2017)	May. 2017
58	Resonant light emission from uniaxially tensile-strained Ge microbridges	10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)	May. 2017
59	Circular distributed Bragg reflector resonators on highly n-doped Ge-on-insulator	10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)	May. 2017
60	ナノドット含有Si薄膜における構造と出力因子の関係	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Mar. 1, 2017
61	An Optical Resonator for Tensile-strained Ge Microbridge by Using Multimode Interference Coupler Loop Mirrors		Mar. 2017
62	Resonant light emission from highly n-doped germanium-on-insulator microdisks with circular bragg grating	Optics InfoBase Conference Papers	Jan. 1, 2017
63	Formation of uniaxially strained Ge by local introduction of ion implantation defects	29th International Conference on Defects in Semiconductors (ICDS2017)	2017
64	Low-Defect-Density Al2O3 Insulating Layer for Gate-Controlled Si/SiGe Quantum Dots	29th International Conference on Defects in Semiconductors (ICDS2017)	2017
65	Effects of ion implantation defects on strain relaxation of SiGe layers on Si (110)	29th International Conference on Defects in Semiconductors (ICDS2017)	2017
66	Anisotropic strain engineering of Si/Ge heterostructures	2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016)	Dec. 24, 2016
67	Enhanced Light Emission from N-Doped Ge Microdisks by Thermal Oxidation	Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016)	Oct. 2016
68	Anisotropic Strain Introduction into Si/Ge Hetero Structures	Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016)	Oct. 2016
69	Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering	Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016)	Oct. 2016
70	イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Sep. 1, 2016
71	Si(111)基板上エピタキシャルβ‐FeSi2薄膜の熱電特性	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Sep. 1, 2016
72	鉄シリサイドナノドット構造制御によるSi薄膜の熱電物性向上	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Sep. 1, 2016
73	Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation	19th International Conference on Molecular Beam Epitaxy (MBE 2016)	Sep. 2016
74	Light Emission Enhancement from Ge Quantum Dots with Phosphorous -Doping	19th International Conference on Molecular Beam Epitaxy (MBE 2016)	Sep. 2016
75	Electrical spin injection and detection in n+-Ge using Schottky tunnel contacts		Sep. 2016
76	Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique	19th International Conference on Molecular Beam Epitaxy (MBE 2016)	Sep. 2016
77	Highly N-doped Ge Microdisks with Circular Bragg Gratings on Ge-on-Insulator	The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)	Sep. 2016
78	Fabrication of uniaxially strained Ge by selective ion implantation technique	The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)	Aug. 2016
79	Electrical spin injection and detection at room temperature in n-Ge based lateral spin valves with Co2FeSi0.5Al0.5/n+-Ge Schottky tunnel contact	9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids	Aug. 2016
80	Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE	The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)	Aug. 2016
81	Influences of Phosphorous δ-Doping at Ge Quantum Dots / Si Interface on Photoluminescence Properties and Dot Formation	The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)	Aug. 2016
82	Control of Electrical Properties in Heusler-Alloy/Ge Schottky Tunnel Contacts formed by Phosphorous δ-Doping with Si-Layer Insertion	International SiGe Technology and Device Meeting 2016 (ISTDM2016)	Jun. 2016
83	Strained Ge-on-Insulator Substrates toward Optoelectronic Integrated Circuits	The International Conference on Small Science (ICSS 2016)	Jun. 2016
84	Room-temperature electrical spin injection and detection in n-Ge through Co2Fe0.5SiAl0.5/n+-Ge Schottky tunnel contacts	7th International Symposium on Control of Semiconductor Interfaces/International SiGe Technology and Device Meeting	Jun. 2016
85	Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts formed by phosphorous δ-doping with Si-layer insertion	7th International Symposium on Control of Semiconductor Interfaces/International SiGe Technology and Device Meeting	Jun. 2016
86	Room-Temperature Electrical Spin Injection and Detection in n-Ge through Co2FeSi0.5Al0.5/n+-Ge Schottky Tunnel Contacts	International SiGe Technology and Device Meeting 2016 (ISTDM2016)	Jun. 2016
87	Formation of Strained Ge-on-Insulator (GOI) Substrates using SiGe Etching Stop Layers	International SiGe Technology and Device Meeting 2016 (ISTDM2016)	Jun. 2016
88	Thermal Stability of Compressively Strained Si/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates	International SiGe Technology and Device Meeting 2016 (ISTDM2016)	Jun. 2016
89	High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks	SPIE Photonics Europe 2016	Apr. 2016
90	High Q-factor resonant photoluminescence from Ge-on-insulator micro-disks	Proceedings of SPIE - The International Society for Optical Engineering	Jan. 1, 2016
91	Spin absorption affect at ferromagnetic alloy/n+-Ge interfaces	61st Anuual Magnetism and Magnetic Materials Conference (MMM 2016)	2016
92	Electrical spin injection and detection in n+-Ge using Schottky tunnel contacts	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	2016
93	3次元アトムプローブ法によるGe中のドーパント分布評価	東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM)	2016
94	“Low-temperature fabrication of a gate stack structure for Ge-based spin-MOSFET	2015 International Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (2015 IWDTF)	Nov. 2015
95	Low-temperature Fabrication of a Gate Stack Structure for Ge-based Spin-MOSFET	2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (2015 IWDTF)	Nov. 2015
96	Co2FeSi0.5Al0.5ホイスラー合金電極を用いたn‐Ge中の室温スピン伝導観測	日本金属学会講演概要(CD-ROM)	Sep. 2, 2015
97	イオン注入による欠陥制御を用いて作製した圧縮歪みSi/Si1-xCxヘテロ構造の熱的安定性	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Aug. 31, 2015
98	PデルタドープしたGe基板の3次元アトムプローブ評価	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Aug. 31, 2015
99	Co2FeSi0.5Al0.5/n+‐Geショットキートンネル接合を用いたn‐Ge中の室温スピン伝導検出	日本磁気学会学術講演概要集	Aug. 25, 2015
100	Strained Germanium based Nano-Structures toward High Performance Optoelectronic Integrated Circuits	International Symposium for Advanced Materials Research 2015 (ISAMR 2015)	Aug. 2015
101	Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Ge/SiGe Quantum Well	21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21)	Jul. 2015
102	Robust quantum dot devices for qubits in isotopically purified 28Si	21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21)	Jul. 2015
103	Fabrication of Strained Ge-on-Insulator for Ge-based Optoelectronic Devices	E-MRS 2015 Spring Meeting	May. 2015
104	Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique	9th International Conference on Silicon Epitaxy and Heterostructures	May. 2015
105	イオン注入成長法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造MOSFETの電気特性評価	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Feb. 26, 2015
106	歪みSi/Si1-xCx/Si(001)ヘテロ構造の結晶性と不純物活性化過程との関係	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Feb. 26, 2015
107	n‐GeへのPデルタドーピングにおけるSi挿入によるその偏析抑制効果	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Feb. 26, 2015
108	Arイオン注入法を用いた圧縮歪みSi/緩和Si1-xCxヘテロ構造の作製	応用物理学会春季学術講演会講演予稿集(CD-ROM)	Feb. 26, 2015
109	アトムプローブ法によるGe中にデルタドープしたPの3次元分布評価	東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター共同利用研究経過報告書(CD-ROM)	2015
110	Anisotropic Strain Engineering in Si/Ge Heterostructures	The Collaborative Conference on Crystal Growth (3CG 2014)	Nov. 2014
111	イオン注入法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造の結晶性及びデバイス特性評価	応用物理学会秋季学術講演会講演予稿集(CD-ROM)	Sep. 1, 2014
112	Suppression of segregation in P delta doping for ultrashallow Ohmic contact on n-type Ge	18th International Conference on Molecular Beam Epitaxy, Flagstaff	Sep. 2014
113	Enhancement of Photoluminescence from Si/Ge Quantum Dots by Phosphorus -doping	18th International Conference on Molecular Beam Epitaxy	Sep. 2014
114	Electrical properties of strained Ge(111)-on-Insulator (GOI) fabricated by Ge epitaxy on Si and layer transfer	7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM	Jun. 2014
115	Formation of Uniaxially Strained SiGe with High Ge Concentrations by Selective Ion Implantation	7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM	Jun. 2014
116	Formation of ultrashallow Ohmic contacts for n-type Ge by P delta-doping	7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM	Jun. 2014
117	Generation and detection of pure spin current in n-Ge using L21-ordered Co2FeSi electrodes	IEEE International Magnetics Conference (Intermag 2014)	May. 2014
118	27aAW-4 Spin orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well detected by weak anti-localization	Meeting abstracts of the Physical Society of Japan	Mar. 5, 2014	The Physical Society of Japan (JPS)
119	Highly efficient detection of pure spin currents in n-Ge using L21-Co2FeSi Heusler-compound electrodes		Mar. 2014
120	Resonant light emission from N-doped germanium-on-insulator microdisks at room-temperature	IEEE International Conference on Group IV Photonics GFP	Jan. 1, 2014
121	Resonant photoluminescence from Ge microdisks on Ge-on-insulator	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014	Jan. 1, 2014
122	Tensile-strained, heavily N-doped germanium-on-insulator for light emitting devices on silicon	Optics InfoBase Conference Papers	Jan. 1, 2014
123	Tensile-strained, heavily n-doped germanium-on-insulator for light emitting devices on silicon	Conference on Lasers and Electro-Optics Europe - Technical Digest	Jan. 1, 2014
124	Strain engineered Si/Ge heterostructures	The International Conference on Small Science (ICSS 2013)	Dec. 2013
125	“Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates	17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)	Aug. 2013
126	Epitaxial Ge/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces	The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)	Jun. 2013
127	Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy	The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)	Jun. 2013
128	Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer	The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)	Jun. 2013
129	Formation of Uniaxially Strained Ge by Selective Ion Implantation	E-MRS 2013 Spring Meeting, Symposium I	May. 30, 2013
130	27aXQ-1 Observation of Landau level anti-crossing and weak anti-localization in Ge/SiGe Quantum well	Meeting abstracts of the Physical Society of Japan	Mar. 26, 2013	The Physical Society of Japan (JPS)
131	29aXQ-3 Development of Lateral quantum dots on non-doped Si/SiGe	Meeting abstracts of the Physical Society of Japan	Mar. 26, 2013	The Physical Society of Japan (JPS)
132	Temperature, electron density and in-plane magnetic field dependence of cyclotron relaxation time in the two-dimensional metallic phase	Journal of Physics: Conference Series	Jan. 1, 2013
133	Surface segregation behavior of B, Ga, Sb, and as dopant atoms on Ge(100) and Ge(111) examined with a first-principles method	Journal of Physics: Conference Series	Jan. 1, 2013
134	High efficiency quantum dot solar cells using 2-dimensional 6.4-nm-diameter Si nanodisk with SiC interlayer	Conference Record of the IEEE Photovoltaic Specialists Conference	Nov. 26, 2012
135	Fabrication and characterization of Si/SiGe quantum dots with capping gate	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012	Oct. 12, 2012
136	Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation	Pacific Rim Meeting (PRiME) 2012	Oct. 10, 2012
137	Formation of high-quality Ge(111) layers on Si (111) substrates	The 17th International Conference on Molecular Beam Epitaxy	Sep. 27, 2012
138	On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique	The 17th International Conference on Molecular Beam Epitaxy	Sep. 26, 2012
139	Magnetotransport properties of 20-nm-thick strained Ge with various compressive stresses	2012 International Conference on Solid State Devices and Materials (SSDM 2012)	Sep. 2012
140	18pFB-7 Landau level crossing in Ge/SiGe 2-dimensional hole system	Meeting abstracts of the Physical Society of Japan	Aug. 24, 2012	The Physical Society of Japan (JPS)
141	Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings	Jul. 30, 2012
142	Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method	Technical report of IEICE. SDM	Jun. 14, 2012	The Institute of Electronics, Information and Communication Engineers
143	Cyclotron resonance of two dimensional electrons near the metal-insulator transition	AIP Conference Proceedings	Dec. 1, 2011
144	Ion Implantation for Strain Engineering of Si-based Semiconductor	BIT’s 1st Annual World Congress of Nano-S&T 2011	Oct. 26, 2011
145	Study of HfO_2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy	Technical report of IEICE. SDM	Oct. 13, 2011	The Institute of Electronics, Information and Communication Engineers
146	Surface segregation behavior of B, Ga, Sb, and As dopant atoms on Ge(100) and Ge(111) examined with a first-principles method	ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures)	Aug. 30, 2011
147	Fabrication of strained thin-film GOI based on wafer bonding	ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures)	Aug. 30, 2011
148	Microstructure Change of Si0.99C0.01 Thin Films Caused by Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation and Successive Rapid Thermal Annealing Treatment	ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures)	Aug. 30, 2011
149	Ratchet photovoltage in Si/SiGe heterostructure for different antidot lattice parameters	The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19)	Jul. 25, 2011
150	Electron-antidot interaction in antidot lattice with different etching parameter	The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19)	Jul. 25, 2011
151	Temperature dependence of two-dimensional hole gas mobility in a strained Ge quantum well	The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19)	Jul. 25, 2011
152	Stripe line width dependence of anisotorpic strain states induced into SiGe films by selective ion implantation technique	European Materials Research Society (E-MRS) 2011 Spring Meeting	May. 9, 2011
153	28aHD-1 Consideration about Schottky gate of Si/SiGe quantum dot	Meeting abstracts of the Physical Society of Japan	Mar. 3, 2011	The Physical Society of Japan (JPS)
154	Cyclotron resonance in the two-dimensional metallic phase of Si quantum wells	Journal of Physics: Conference Series	Jan. 1, 2011
155	Formation of ultra-shallow Ohmic contacts on n-Ge by Sb δ-doping	MRS 2010 Fall Meeting, Symposium AA: Group IV Semiconductor Nanostructures and Applications	Dec. 2, 2010
156	24aWQ-3 Fabrication and evaluation of Si/SiGe quantum dot with Pd schottky gate	Meeting abstracts of the Physical Society of Japan	Aug. 18, 2010	The Physical Society of Japan (JPS)
157	24aWQ-2 Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure	Meeting abstracts of the Physical Society of Japan	Aug. 18, 2010	The Physical Society of Japan (JPS)
158	CMP for high mobility strained Si/Ge channels	Materials Research Society Symposium Proceedings	Jul. 1, 2010
159	Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels	E-MRS 2010 Spring Meeting, Symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials Strasbourg	Jun. 10, 2010
160	Effect of line width on uniaxial strain states of SiGe layers fabricated by selective ion implantation	5th International SiGe Technology and Device Meeting (ISTDM) 2010	May. 24, 2010
161	20pHV-3 Cyclotron resonance in the two dimensional metallic phase of Si/SiGe	Meeting abstracts of the Physical Society of Japan	Mar. 1, 2010	The Physical Society of Japan (JPS)
162	Fe3Si/Ge(111) Schottky contacts for spin injection into a Ge channel	11th Joint MMM-Intermag Conference (2010/1/20)	Jan. 20, 2010
163	"Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts	11th Joint MMM-Intermag Conference (2010/1/19).	Jan. 19, 2010
164	Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping	Materials Research Society Symposium Proceedings	2010
165	Room-temperature observation of quantum size effects in photoluminescence of Si/Si0.8Ge0.2 nanocolumns prepared by neutral beam etching	International Symposium on Quantum Nanophotonics and Nanoelectronics 2009	Nov. 2009
166	Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts	International IMR Workshop on Group IV Spintronics	Oct. 4, 2009
167	Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices	The 216th Meeting of the Electrochemical Society, Analytical Techniques for Semiconductor Materials and Process Characterization 6	Oct. 2009
168	Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation		Sep. 2009
169	25pXD-3 The relationship between quantum well width and valley splitting energy in Si/SiGe quantum well two-dimensional electron system	Meeting abstracts of the Physical Society of Japan	Aug. 18, 2009	The Physical Society of Japan (JPS)
170	Landau level crossing and pseudospin phase transitions in Si quantum wells	The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)	Jul. 2009
171	Deactivation Mechanism of Ion-Implanted Arsenic in Germanium	The 25th International Conference on Defects in Semiconductors (ICDS-25)	Jul. 2009
172	Cyclotron resonance of two-dimensional electrons in a Si quantum well	The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)	Jul. 2009
173	Identification of scattering mechanisms limiting the mobility of two-dimensional electron gas in Si/SiGe heterostructures	The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)	Jul. 2009
174	Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique	E-MRS 2009 Spring Meeting, Symposium I	Jun. 2009
175	Absence of Transient Enhanced Diffusion in Ion-Implanted Ge Investigated by Isotope Superlattices	E-MRS 2009 Spring Meeting, Symposium I : Silicon and Germanium issues for future CMOS devices	Jun. 2009
176	“Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique	6th International Conference on Silicon Epitaxy and Heterostructures	May. 2009
177	CMP for high mobility strained Si/Ge Channels	2009 MRS (Materials Research Society) Spring Meeting, Symposium E	Apr. 16, 2009
178	Strained Si/Ge heterostructures : SiGe virtual substrate and strained Ge channel	16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008	Dec. 1, 2008
179	20pYK-11 Landau level crossing and pseudospin-unpolarized states in silicon two-dimensional electron systems	Meeting abstracts of the Physical Society of Japan	Aug. 25, 2008	The Physical Society of Japan (JPS)
180	Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature	The 13th International Conference on Modulated Semiconductor structures (MSS-13)	Jul. 2008
181	Selective and Rapid Heating Method for Polycrystallization of Amorphous Si Using Microwave Plasma Irradiation	4th International SiGe Technology and Device Meeting (ISTDM) 2008	May. 2008
182	Strain Relaxation Mechanisms in Compositionally Uniform and Step-Graded SiGe Films Grown on Si(110) Substrates	4th International SiGe Technology and Device Meeting (ISTDM) 2008	May. 2008
183	Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of 2DHG Confined in Ge Quantum Wells	4th International SiGe Technology and Device Meeting (ISTDM) 2008	May. 2008
184	Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method	4th International SiGe Technology and Device Meeting (ISTDM) 2008	May. 2008
185	Local Strain Control of SiGe by Selective Ion Implantation Technique	4th International SiGe Technology and Device Meeting (ISTDM) 2008	May. 2008
186	Crystalline morphology of step-graded SiGe layers grown on exact and vicinal (110) Si substrates	4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)	May. 2008
187	Structural and transport properties of strained Ge and SiGe grown on patterned substrates	4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)	May. 2008
188	Strain relaxation mechanism in step-graded SiGe/Si(110) structure grown at 650 – 800 °C	4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)	May. 2008
189	Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge composition by ion implantation method	4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)	May. 2008
190	Local Control of Strain in SiGe by Ion Implantation Technique	4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)	May. 2008
191	23aWH-9 Spin-dependent tunnel currents in a Si/SiGe quantum Hall diode	Meeting abstracts of the Physical Society of Japan	Feb. 29, 2008	The Physical Society of Japan (JPS)
192	Fabrication of SiGe Virtual Substrates by Ion Implantation Technique	212th ECS Meeting	Oct. 2007
193	Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels		Sep. 19, 2007
194	Demonstration of SiGe heterostructures with room-temperature 2DHG drift mobility and carrier density exceeding those of 2DEG		Sep. 2007
195	21aTH-6 Landau level crossing and giant anisotropy of electrical conductivity in a high mobility silicon 2D electron system	Meeting abstracts of the Physical Society of Japan	Aug. 21, 2007	The Physical Society of Japan (JPS)
196	Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures	The 13th International Conference on Modulated Semiconductor structures (MSS-13)	Jul. 2007
197	Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
198	Investigations of strain states and improvements of thermal stability in strained-Si-on-Insulator (sSOI) structures	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
199	Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
200	Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
201	Characterizations of Polycrystalline SiGe Films on SiO2 Grown by Gas-Source Molecular Beam Deposition	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
202	Growth temperature dependence of the defect morphology in SiGe films grown on Si(110) substrates with step-graded buffer being employed	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)	May. 2007
203	19aRC-1 Valley splitting edge channels in a Si/SiGe quantum Hall system	Meeting abstracts of the Physical Society of Japan	Feb. 28, 2007	The Physical Society of Japan (JPS)
204	Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	Dec. 1, 2006
205	Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	Dec. 1, 2006
206	Thermal stability of strained-SOI (sSQI)	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest	Dec. 1, 2006
207	The hole density dependence of hole mobility in compressively strained Ge channel modulation-doped structures	2nd International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics	Oct. 2006
208	Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties	The 14th International Conference on Molecular Beam Epitaxy (MBE2006)	Sep. 2006
209	Growth temperature dependence of the lattice structures of SiGe films grown on Si(110) substrates by gas source MBE	The 14th International Conference on Molecular Beam Epitaxy (MBE2006)	Sep. 2006
210	25pXL-5 Spin dependent nonlocal resistance in a Si/SiGe quantum Hall system	Meeting abstracts of the Physical Society of Japan	Aug. 18, 2006	The Physical Society of Japan (JPS)
211	26aXL-3 Screening effect in strongly correlated silicon 2D electron systems	Meeting abstracts of the Physical Society of Japan	Aug. 18, 2006	The Physical Society of Japan (JPS)
212	Spin dependence of edge-channel transport in silicon-based quantum Hall systems	The 4th Int. Conf. on Physics and Application of Spin-related Phenomena in Semiconductors (PASPS-IV)	Aug. 2006
213	The carrier density dependence of hole mobility in strained Ge channel modulation-doped structures	28th International conference on the Physics of Semiconductors (ICPS-28)	Jul. 2006
214	Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping	3rd International SiGe Technology and Device Meeting (ISTDM) 2006	May. 2006
215	Investigations of Thermal Stability of strained-SOI (sSOI)	3rd International SiGe Technology and Device Meeting (ISTDM) 2006	May. 2006
216	Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures	3rd International SiGe Technology and Device Meeting (ISTDM) 2006	May. 2006
217	27pXB-6 Edge-channel transport in Si/SiGe quantum Hall systems	Meeting abstracts of the Physical Society of Japan	Mar. 4, 2006	The Physical Society of Japan (JPS)
218	Spin dependence of inter-edge-channel scattering in silicon-based quantum Hall systems	17th Int. Conf. on High Magnetic Fields in Semiconductor Physics (HMF)	2006
219	Corrigendum to ''Changes in elastic deformation of strained si by microfabrication''. [Materials Science in Semiconductor Processing 8 (2005) 181-185] (DOI:10.1016/j.mssp.2004.09.037)	Materials Science in Semiconductor Processing	Dec. 1, 2005
220	Strain field fluctuation in SiGe buffer layers and its reduction by ion implantation technique	Seventh International Conference on New Phenomena in Mesoscopic Structures	Nov. 2005
221	歪みSOI(sSOI)構造の熱的安定性	応用物理学会学術講演会講演予稿集	Sep. 7, 2005
222	Strain relaxation and surface morphology of new type thin SiGe virtual substrates		Sep. 2005
223	Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers	12th International Conference on Modulated Semiconductor Structures (MSS12)	Jul. 2005
224	Transport properties of polycrystalline SiGe thin films grown on SiO<inf>2</inf>	Materials Research Society Symposium Proceedings	Jun. 20, 2005
225	Transport Properties of SPC-Poly SiGe Crystallized at 700°C and GSMBE-Poly SiGe Grown at 600°C	Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)	May. 2005
226	Determination of Lattice Parameters of Strained-Si/SiGe Heterostructures Grown on Si(110) Substrates	Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)	May. 2005
227	Strain Relaxation Mechanism of a SiGe Thin Film Grown on an Ion-Implanted Si substrate	Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)	May. 2005
228	Strain field and related roughness formation in SiGe relaxed buffer layers	Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4),	May. 2005
229	Strain field distribution in strained-Si / SiGe virtual substrates and its influence on roughness formation	First International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics	May. 2005
230	Changes in elastic deformation of strained Si by microfabrication	Materials Science in Semiconductor Processing	Feb. 1, 2005
231	Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates	Materials Science in Semiconductor Processing	Dec. 10, 2004
232	Fabrication of p-i-n Si<inf>0.5</inf>Ge<inf>0.5</inf>photodetctors on SiGe-on-Insulator Substrates	2004 1st IEEE International Conference on Group IV Photonics	Dec. 1, 2004
233	Improved photovoltaic cell performance based on Ge islands embedded into the intrinsic layer	Proceedings - Electrochemical Society	Dec. 1, 2004
234	Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2	Materials Research Society 2004 Fall Meeting	Nov. 2004
235	Fabrication of p-i-n Si0.5Ge0.5 photodetectors on SiGe-on insulator substrates	Third international Workshop on new group-IV (Si-Ge-C) semiconductors	Oct. 2004
236	Strain field fluctuation in strained-Si/SiGe heterostructures	Third international Workshop on new group-IV (Si-Ge-C) semiconductors	Oct. 2004
237	“Formation of high-quality thin straine-relaxed SiGe buffer layers by ion implantation	Third international Workshop on new group-IV (Si-Ge-C) semiconductors	Oct. 2004
238	Elastic strain distribution in narrow strained Si channels	Third international Workshop on new group-IV (Si-Ge-C)	Oct. 2004
239	Fabrication of strained Ge channel structures with extremely high hole mobility	Third international Workshop on new group-IV (Si-Ge-C) semiconductors	Oct. 2004
240	Observation of strain field fluctuation in SiGe relaxed buffer layers and its influence on overgrown structures	7th China-Japan Symposium on Thin Films	Sep. 2004
241	Fabrication of p-i-n Si0.5Ge0.5 Photodetectors on SiGe-on-Insulator Substrates	1st International Conference on Group IV Photonics	Sep. 2004
242	Growth of Functional Structures on SiGe-on-Insulator Substrates with High Ge Content	14th International Conference on Crystal Growth	Aug. 2004
243	Changes in Elastic Deformation of Strained Si by Micro-Fabrication	Second International SiGe Technology and Device Meeting (ISTDM) 2004	May. 2004
244	High-Quality Thin SiGe Virtual Substrates Formed on Ion-Implanted Si Substrates	Second International SiGe Technology and Device Meeting (ISTDM) 2004	May. 2004
245	Observation of Dislocations in Strain-Relaxed Silicon-Germanium Thin Films with Flat Surfaces Grown on Ion-Implanted Silicon Substrates	European Material Research Society (E-MRS) Meeting	May. 2004
246	Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures	Materials Science in Semiconductor Processing	2004
247	Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion	Dec. 1, 2003
248	酸化によるSi/Si0.7Ge0.3の深さ方向組成変化	応用物理学会学術講演会講演予稿集	Aug. 2003
249	Formation of thin SiGe virtual substrates by ion implantation into Si substrates	First International SiGe Technology and Device Meeting (ISTDM) 2003	Jan. 2003
250	Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates	MBE XII 2002 Conference	Sep. 2002
251	Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures	MBE XII 2002 Conference	Sep. 2002
252	Fabrication of Ultrasmooth SiGe Virtual Substrates by CMP and their Application to Strained Si Modulation-Doped Structures	Second International Workshop on New Group IV (Si-Ge-C) Semiconductors	Jun. 2002
253	Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy	Jan. 1, 2002
254	Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy	Jan. 1, 2002
255	Surface Smoothing of SiGe Strain-relaxed Buffer Layers by Chemical Mechanical Polishing	E-MRS Spring Meeting 2001 Second International Conference on Silicon Epitaxy and Heterostructures	Jun. 2001
256	On the origin of drastic enhancement of the no-phonon transition in GaAsP/GaP indirect quantum wells with an ultrathin AlP layer	International Conference on Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000)	Sep. 2000

　

Awards & Honors
No.	Publication date	Association	Prize	Subtitle
1	Mar. 2011		Young Scientist Award	Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
2	2010		Paper Award
3	2009		JJAP Young Scientist Award	Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation

　

Research Grants & Projects
No.	Offer organization	System name	Title	Fund classification	Date
1	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research	Exploring spin coherence engineering in group IV semiconductor quantum structures		Apr. 2023 - Mar. 2028
2	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)	Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substrates		Apr. 2021 - Mar. 2024
3	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)	Development of a germanium spin MOSFET		Jun. 2019 - Mar. 2024
4	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)	Development of rare-earth oxide based optical amplifiers and lasers integrated on Si by using magnetic light-matter interactions		Apr. 2019 - Mar. 2022
5	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)	Development of Si-based Dirac electron superlattice and its thermoelectric devices based on phonon and electron trapsport physics		Apr. 2019 - Mar. 2024
6	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)	Creation of Germanium Circular-polarized LED toward Optical Encrypted Communication		Apr. 2019 - Mar. 2022
7	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)	Control of defects and surface morphology on strained Si/SiGe/Si(110) structure using the ion implantation method		Apr. 2018 - Mar. 2021
8	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)	Optical and electric-field control of pure spin current transport		Apr. 2016 - Mar. 2020
9	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)	High performance Si thermoelectric material design based on phonon-carrier wave control in novel heteronanostructures		Apr. 2016 - Mar. 2020
10	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)	Developments of high mobility uniaxially strained Germanium channel devices		Apr. 2014 - Mar. 2017
11	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)	Development of coherently-connected nanodot structure for rare-metal-free thermoelectric materials		Apr. 2013 - Mar. 2017
12	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research	Quantum Dot Single Hole Device based on Strained Germanium Two Dimensional Hole Gas		Apr. 2013 - Mar. 2016
13	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)	Development of vertical-type spin MOSFET with Schottky source and drain		Apr. 2013 - Mar. 2016
14	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)	Realization of compressively strained silicon by defect control using ion implantation and application to high hole mobilty devices		Apr. 2012 - Mar. 2016
15	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)	Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies		2009 - 2012
16	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)	Study of high-κ/strained-Ge channel and high-κ/strained-Si channel using X-ray Photoelectron Spectroscopy		2009 - 2011
17	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)	Development of selective strain controlling technique in Silicon Germanium hetero-structures		2007 - 2008
18		Grant-in-Aid for Scientific Research	Developement of selective strain controlling technology for Si/Ge hetero structures	competitive_research_funding	2007 - 2008
19	Japan Society for the Promotion of Science	Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)	Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiation		2006 - 2007

　

　

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