| Published Papers |
| No. | Ｔitle | Journal | Vol | No | Start Page | End Page | Publication date | DOI | Referee |
| 1 | Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers  | AIP Advances | 13 | 7 | | | Jul. 1, 2023 | https://doi.org/10.1063/5.01554171 | Refereed |
| 2 | Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes | Journal of Crystal Growth | 594 | | 126766 | 126766 | Sep. 2022 | https://doi.org/10.1016/j.jcrysgro.2022.1267661 | |
| 3 | Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and postannealing | Applied Physics Express | 14 | 4 | | | Apr. 2021 | https://doi.org/10.35848/1882-0786/abf0df1 | |
| 4 | Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-timescale pump-probe spectroscopy | Physical Review B | 102 | 19 | | | Nov. 5, 2020 | https://doi.org/10.1103/PhysRevB.102.1954071 | |
| 5 | Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe<inf>2</inf>Monolayers by Thermal Treatment | ACS Applied Electronic Materials | 2 | 9 | 2739 | 2744 | Sep. 22, 2020 | https://doi.org/10.1021/acsaelm.0c004521 | |
| 6 | Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 115 | | | | Aug. 2020 | https://doi.org/10.1016/j.mssp.2020.1051041 | Refereed |
| 7 | Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates | Materials Science in Semiconductor Processing | 117 | | | | 2020 | https://doi.org/10.1016/j.mssp.2020.1051531 | Refereed |
| 8 | Strain engineering of Si/Ge heterostructures on Ge-on-Si platform | ECS Transactions | 98 | 5 | 267 | 276 | 2020 | https://doi.org/10.1149/09805.0267ecst1 | |
| 9 | Increased critical thickness for strained SiGe on Ge-on-Si(111) | ECS Transactions | 98 | 5 | 499 | 503 | 2020 | https://doi.org/10.1149/09805.0499ecst1 | |
| 10 | Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control | ECS Transactions | 98 | 5 | 513 | 518 | 2020 | https://doi.org/10.1149/09805.0513ecst1 | |
| 11 | Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111) | APPLIED PHYSICS EXPRESS | 12 | 8 | | | Aug. 1, 2019 | https://doi.org/10.7567/1882-0786/ab2db81 | Refereed |
| 12 | Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift | npj Quantum Information | 4 | 1 | | | Dec. 1, 2018 | https://doi.org/10.1038/s41534-018-0105-z1 | Not refereed |
| 13 | Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100) | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 33 | 12 | | | Dec. 2018 | https://doi.org/10.1088/1361-6641/aae5751 | Refereed |
| 14 | Effect of a pick-and-drop process on optical properties of a CVD-grown monolayer tungsten disulfide | PHYSICAL REVIEW MATERIALS | 2 | 6 | | | Jun. 22, 2018 | https://doi.org/10.1103/PhysRevMaterials.2.0640031 | Refereed |
| 15 | A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% | Nature Nanotechnology | 13 | 2 | 102 | 106 | Feb. 2018 | https://doi.org/10.1038/s41565-017-0014-x1 | Refereed |
| 16 | Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 70 | | 127 | 132 | Nov. 2017 | https://doi.org/10.1016/j.mssp.2016.11.0241 | Refereed |
| 17 | Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells | IEEE TRANSACTIONS ON ELECTRON DEVICES | 64 | 7 | 2886 | 2892 | Jul. 2017 | https://doi.org/10.1109/TED.2017.27042941 | Refereed |
| 18 | Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides | PHYSICAL REVIEW B | 95 | 24 | | | Jun. 2017 | https://doi.org/10.1103/PhysRevB.95.2414031 | Refereed |
| 19 | Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells | JAPANESE JOURNAL OF APPLIED PHYSICS | 56 | 4 | | | Apr. 2017 | https://doi.org/10.7567/JJAP.56.04CS011 | Refereed |
| 20 | Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator | THIN SOLID FILMS | 613 | 11 | 24 | 28 | Aug. 2016 | https://doi.org/10.1016/j.tsf.2015.11.0201 | Refereed |
| 21 | Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells | PROGRESS IN PHOTOVOLTAICS | 24 | 6 | 774 | 780 | Jun. 2016 | https://doi.org/10.1002/pip.27261 | Refereed |
| 22 | Modulated surface nanostructures for enhanced light trapping and reduced surface reflection of crystalline silicon solar cells | JAPANESE JOURNAL OF APPLIED PHYSICS | 55 | 5 | | | May. 2016 | https://doi.org/10.7567/JJAP.55.0523021 | Refereed |
| 23 | Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells | JAPANESE JOURNAL OF APPLIED PHYSICS | 55 | 3 | | | Mar. 2016 | https://doi.org/10.7567/JJAP.55.0323031 | Refereed |
| 24 | Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates | JAPANESE JOURNAL OF APPLIED PHYSICS | 55 | 3 | | | Mar. 2016 | https://doi.org/10.7567/JJAP.55.0313021 | Refereed |
| 25 | Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template | JAPANESE JOURNAL OF APPLIED PHYSICS | 54 | 9 | | | Sep. 2015 | https://doi.org/10.7567/JJAP.54.0950031 | Refereed |
| 26 | Effects of anodization process of aluminum oxide template fabrication on selective growth of Si nanowire arrays | JAPANESE JOURNAL OF APPLIED PHYSICS | 54 | 8 | | | Aug. 2015 | https://doi.org/10.7567/JJAP.54.08KA021 | Refereed |
| 27 | Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots | JAPANESE JOURNAL OF APPLIED PHYSICS | 54 | 8 | | | Aug. 2015 | https://doi.org/10.7567/JJAP.54.08KA061 | Refereed |
| 28 | Control of surface dip diameter in Si-based photonic nanostructures by changing growth temperature of Ge quantum dot multilayer structures and its impact on their optical properties | JAPANESE JOURNAL OF APPLIED PHYSICS | 54 | 8 | | | Aug. 2015 | https://doi.org/10.7567/JJAP.54.08KA011 | Refereed |
| 29 | Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures | JAPANESE JOURNAL OF APPLIED PHYSICS | 54 | 4 | | | Apr. 2015 | https://doi.org/10.7567/JJAP.54.04DR031 | Refereed |
| 30 | Light trapping by direction-dependent light transmission in front-surface photonic nanostructures | APPLIED PHYSICS EXPRESS | 7 | 12 | | | Dec. 2014 | https://doi.org/10.7567/APEX.7.1223011 | Refereed |
| 31 | Simulation study of Ge/Si heterostructure solar cells yielding improved open-circuit voltage and quantum efficiency | JAPANESE JOURNAL OF APPLIED PHYSICS | 53 | 11 | | | Nov. 2014 | https://doi.org/10.7567/JJAP.53.1103121 | Refereed |
| 32 | Fabrication And Optical Characterization Of α-Germanium Nano Disk Structure Using Bio-Template And Neutral Beam Etching for Solar Cell Application | 2014 International Conference on Solid State Devices and Materials | | | | | Sep. 2014 | | Refereed |
| 33 | Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates | JOURNAL OF CRYSTAL GROWTH | 401 | 2 | 758 | 761 | Sep. 2014 | https://doi.org/10.1016/j.jcrysgro.2014.02.0141 | Refereed |
| 34 | Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well | PHYSICAL REVIEW LETTERS | 113 | 8 | | | Aug. 2014 | https://doi.org/10.1103/PhysRevLett.113.0866011 | Refereed |
| 35 | Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 15 | 4 | | | Aug. 2014 | https://doi.org/10.1088/1468-6996/15/4/0450051 | Refereed |
| 36 | Simple approach for improving gold deposition inside nanoporous alumina template on Si substrate | APPLIED SURFACE SCIENCE | 305 | | 9 | 15 | Jun. 2014 | https://doi.org/10.1016/j.apsusc.2014.02.1031 | Refereed |
| 37 | Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells | THIN SOLID FILMS | 557 | | 368 | 371 | Apr. 2014 | https://doi.org/10.1016/j.tsf.2013.08.0421 | Refereed |
| 38 | Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer | THIN SOLID FILMS | 557 | | 76 | 79 | Apr. 2014 | https://doi.org/10.1016/j.tsf.2013.10.0741 | Refereed |
| 39 | Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties | THIN SOLID FILMS | 557 | | 338 | 341 | Apr. 2014 | https://doi.org/10.1016/j.tsf.2013.10.0661 | Refereed |
| 40 | N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing | THIN SOLID FILMS | 557 | | 90 | 93 | Apr. 2014 | https://doi.org/10.1016/j.tsf.2013.08.0381 | Refereed |
| 41 | Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots | OPTICS EXPRESS | 22 | 5 | A225 | A232 | Mar. 2014 | https://doi.org/10.1364/OE.22.00A2251 | Refereed |
| 42 | Effect of Miniband Formation in a Quantum Dot Super Lattice Fabricated by Combination of Bio-Template and Neutral Beam Etching for High Efficiency Quantum Dot Solar Cells | 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | Article number 6925105 | | 1092 | 1095 | 2014 | https://doi.org/10.1109/PVSC.2014.69251051 | Refereed |
| 43 | Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties | JAPANESE JOURNAL OF APPLIED PHYSICS | 52 | 8 | | | Aug. 2013 | https://doi.org/10.7567/JJAP.52.0802021 | Refereed |
| 44 | Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation | THIN SOLID FILMS | 534 | | 470 | 473 | May. 2013 | https://doi.org/10.1016/j.tsf.2013.02.0141 | Refereed |
| 45 | Nanostructure and Strain Field in Vertically Aligned Nano-Islands for Si/Ge 2D Photonic Nanocrystals | Materials Research Society Symposium Proceeding | 1510 | | mrsf12-1510-dd05-02-01 | mrsf12-1510-dd05-02-06 | Mar. 2013 | https://doi.org/10.1557/opl.2013.4461 | Refereed |
| 46 | Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates | Journal of Crystal Growth | 378 | | 212 | 217 | 2013 | https://doi.org/10.1016/j.jcrysgro.2012.12.1521 | Refereed |
| 47 | Investigation of the open-circuit voltage in solar cells doped with quantum dots | Scientific Reports | 3 | | | | 2013 | https://doi.org/10.1038/srep027031 | Refereed |
| 48 | High photo-current generation in a three-dimensional silicon quantum dot superlattice fabricated by combination of bio-template and neutral beam etching for quantum dot solar cell | Conference Record of the IEEE Photovoltaic Specialists Conference | | | 2456 | 2458 | 2013 | https://doi.org/10.1109/PVSC.2013.67449721 | Refereed |
| 49 | Growth of vertical silicon nanowires array using electrochemical alternative | Conference Record of the IEEE Photovoltaic Specialists Conference | | | 2443 | 2446 | 2013 | https://doi.org/10.1109/PVSC.2013.67449691 | Refereed |
| 50 | On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique | Journal of Crystal Growth | 378 | | 251 | 253 | 2013 | https://doi.org/10.1016/j.jcrysgro.2012.12.1001 | Refereed |
| 51 | Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation | APPLIED PHYSICS LETTERS | 101 | 13 | | | Sep. 2012 | https://doi.org/10.1063/1.47568951 | Refereed |
| 52 | Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals | NANOTECHNOLOGY | 23 | 18 | | | May. 2012 | https://doi.org/10.1088/0957-4484/23/18/1854011 | Refereed |
| 53 | Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures | APPLIED PHYSICS LETTERS | 100 | 22 | | | May. 2012 | https://doi.org/10.1063/1.47236901 | Refereed |
| 54 | Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well | JOURNAL OF APPLIED PHYSICS | 111 | 7 | | | Apr. 2012 | https://doi.org/10.1063/1.37024641 | Refereed |
| 55 | Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts | JOURNAL OF APPLIED PHYSICS | 111 | 7 | | | Apr. 2012 | https://doi.org/10.1063/1.36709851 | Refereed |
| 56 | Formation of Tensilely Strained Germanium-on-Insulator | APPLIED PHYSICS EXPRESS | 5 | 1 | | | Jan. 2012 | https://doi.org/10.1143/APEX.5.0157011 | Refereed |
| 57 | Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel | PHYSICAL REVIEW B | 85 | 3 | | | Jan. 2012 | https://doi.org/10.1103/PhysRevB.85.0353201 | Refereed |
| 58 | HIGH EFFICIENCY QUANTUM DOT SOLAR CELLS USING 2-DIMENSIONAL 6.4-NM-DIAMETER Si NANODISK WITH SiC INTERLAYER | 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | | | 3195 | 3199 | 2012 | | Refereed |
| 59 | Formation of uniaxially strained Si/Ge channels on SiGe buffers strain-controlled with selective ion implantation | ECS Transactions | 50 | 9 | 815 | 820 | 2012 | https://doi.org/10.1149/05009.0815ecst1 | Refereed |
| 60 | Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films | JAPANESE JOURNAL OF APPLIED PHYSICS | 50 | 12 | | | Dec. 2011 | https://doi.org/10.1143/JJAP.50.1212021 | Refereed |
| 61 | Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation | APPLIED PHYSICS EXPRESS | 4 | 9 | | | Sep. 2011 | https://doi.org/10.1143/APEX.4.0957011 | Refereed |
| 62 | Electric-field control of spin accumulation signals in silicon at room temperature | APPLIED PHYSICS LETTERS | 99 | 13 | | | Sep. 2011 | https://doi.org/10.1063/1.36431411 | Refereed |
| 63 | Self-diffusion in compressively strained Ge | JOURNAL OF APPLIED PHYSICS | 110 | 3 | | | Aug. 2011 | https://doi.org/10.1115/1.40044621 | Refereed |
| 64 | Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact | APPLIED PHYSICS LETTERS | 99 | 1 | | | Jul. 2011 | https://doi.org/10.1063/1.36074801 | Refereed |
| 65 | XPS study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS | ECS Transactions | 41 | 7 | 137 | 146 | 2011 | https://doi.org/10.1149/1.36332931 | Refereed |
| 66 | Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping | Materials Research Society Symposium Proceedings | 1305 | | 30 | 36 | 2011 | https://doi.org/10.1557/opl.2011.1451 | Refereed |
| 67 | Ultrashallow Ohmic contacts for n-type Ge by Sb delta-doping | APPLIED PHYSICS LETTERS | 97 | 16 | | | Oct. 2010 | https://doi.org/10.1063/1.35035871 | Refereed |
| 68 | Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique | JOURNAL OF APPLIED PHYSICS | 107 | 10 | | | May. 2010 | https://doi.org/10.1063/1.33746881 | Refereed |
| 69 | Formation of uniaxially strained SiGe by selective ion implantation technique | THIN SOLID FILMS | 518 | 9 | 2454 | 2457 | Feb. 2010 | https://doi.org/10.1016/j.tsf.2009.09.1571 | Refereed |
| 70 | Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation | THIN SOLID FILMS | 518 | | S162 | S164 | Jan. 2010 | https://doi.org/10.1016/j.tsf.2009.10.0791 | Refereed |
| 71 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved X-ray Photoelectron Spectroscopy | PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8 | 33 | 3 | 467 | 472 | 2010 | https://doi.org/10.1149/1.34816351 | Refereed |
| 72 | Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method | JOURNAL OF CRYSTAL GROWTH | 311 | 3 | 825 | 828 | Jan. 2009 | https://doi.org/10.1016/j.jcrysgro.2008.09.1001 | Refereed |
| 73 | Local control of strain in SiGe by ion-implantation technique | JOURNAL OF CRYSTAL GROWTH | 311 | 3 | 806 | 808 | Jan. 2009 | https://doi.org/10.1016/j.jcrysgro.2008.09.0991 | Refereed |
| 74 | Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation | APPLIED PHYSICS EXPRESS | 1 | 12 | | | Dec. 2008 | https://doi.org/10.1143/APEX.1.1214011 | Refereed |
| 75 | Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions | THIN SOLID FILMS | 517 | 1 | 87 | 89 | Nov. 2008 | https://doi.org/10.1016/j.tsf.2008.08.1091 | Refereed |
| 76 | Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures | THIN SOLID FILMS | 517 | 1 | 340 | 342 | Nov. 2008 | https://doi.org/10.1016/j.tsf.2008.08.1541 | Refereed |
| 77 | Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique | THIN SOLID FILMS | 517 | 1 | 353 | 355 | Nov. 2008 | https://doi.org/10.1016/j.tsf.2008.08.1081 | Refereed |
| 78 | Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels | APPLIED PHYSICS EXPRESS | 1 | 8 | | | Aug. 2008 | https://doi.org/10.1143/APEX.1.0814011 | Refereed |
| 79 | Strain state and thermal stability of strained-Si-on-insulator substrates | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 46 | 11 | 7294 | 7296 | Nov. 2007 | https://doi.org/10.1143/JJAP.46.72941 | Refereed |
| 80 | Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique | APPLIED PHYSICS LETTERS | 90 | 20 | | | May. 2007 | https://doi.org/10.1063/1.27393241 | Refereed |
| 81 | Thermal stability of strained-SOI (sSQI) | Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest | 2006 | | | | 2006 | | |
| MISC |
| No. | Ｔitle | Journal | Vol | No | Start Page | End Page | Publication date |
| 1 | Phase transition control of MoTe2 multilayers by tellurization of MoO3 thin films | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 70th | | | | 2023 |
| 2 | Devolopment of highly sensitive gas sensors using two-dimensional heterostructure resonators | 立石科学技術振興財団助成研究成果集(Web) | | 32 | | | 2023 |
| 3 | Optical properties of biaxially tensile-strained transition metal dichalcogenide monolayers | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 70th | | | | 2023 |
| 4 | Effect of surface roughness of hBN on exciton dynamics in WSe2 monolayer encapsulated by hBN | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 70th | | | | 2023 |
| 5 | Effect of thermal anneal on the electrical properties of MoTe2/hBN structures | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 69th | | | | 2022 |
| 6 | EL intensity dependence of carrier density in lateral PN junction induced in 3L-MoTe2 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 69th | | | | 2022 |
| 7 | Electromechanical properties of hBN/1L-MoS2 nanomechanical resonators | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 69th | | | | 2022 |
| 8 | Development of Near Infrared EL Devices with Circular Polarization Direction Modulation using Van Der Waals Heterostructures and Their Optical Properties | 村田学術振興財団年報 | | 36 | | | 2022 |
| 9 | Optical properties of Large-area MoTe2 monolayers by the gold-mediated exfoliation | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 83rd | | | | 2022 |
| 10 | Crystal structure evaluation of CVD grown MoTe2 multilayers | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 83rd | | | | 2022 |
| 11 | Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 83rd | | | | 2022 |
| 12 | Twist angle dependence of activation energy for interlayer exciton in MoS2/WSe2 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 83rd | | | | 2022 |
| 13 | Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 68th | | | | 2021 |
| 14 | Thermal stability of hBN-encapsulated molybdenum ditelluride crystals | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 68th | | | | 2021 |
| 15 | Light emitting diode of MoTe2 lateral PN junction formed by dual back gate voltage modulation | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 82nd | | | | 2021 |
| 16 | Effects of surface damages on current-modulating resistivity measurement of Si wafers | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 68th | | | | 2021 |
| 17 | Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 82nd | | | | 2021 |
| 18 | Room temperature EL from strained Ge-on-Si(111) diode structure | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 68th | | | | 2021 |
| 19 | Metallic MoTe2 formation with a combination of ion implantation and thermal anneal | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 81st | | | | 2020 |
| 20 | Influences of thermal annealing after bonding on GOI fabrication | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 67th | | | | 2020 |
| 21 | Effect of thermal anneal on optical properties for hBN-encapsulated MoTe2 monolayers | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 67th | | | | 2020 |
| 22 | Removal of interfacial contaminations in hBN/1L-MoTe2 heterostructures by annealing | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 81st | | | | 2020 |
| 23 | Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 81st | | | | 2020 |
| 24 | Fabrication of high quality strained SiGe on Ge-on-Si(111) by selective growth | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 81st | | | | 2020 |
| 25 | Suppression of crack formation in strained SiGe layer by patterning of Ge-on-Si substrates | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 67th | | | | 2020 |
| 26 | 同位体制御Si/SiGe単一電子スピンの1/f電荷揺らぎによる位相雑音 | 日本物理学会講演概要集(CD-ROM) | 72 | 2 | ROMBUNNO.21pB31‐4 | | Sep. 25, 2017 |
| 27 | 同位体制御Si/SiGe電子スピン量子ビットの高速量子操作忠実度 | 日本物理学会講演概要集(CD-ROM) | 72 | 1 | ROMBUNNO.17pA21‐7 | | Mar. 21, 2017 |
| 28 | hBN/単原子層WS2/hBN構造の励起子ダイナミクス | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 64th | | ROMBUNNO.16p‐F203‐13 | | Mar. 1, 2017 |
| 29 | Si/SiGe多重量子ドットの形成と電荷状態測定 | 日本物理学会講演概要集(CD-ROM) | 71 | 2 | ROMBUNNO.15aAB‐10 | 1159 | Sep. 23, 2016 |
| 30 | 同位体制御されたSi/SiGe量子ドットにおける単一電子スピン共鳴 | 日本物理学会講演概要集(CD-ROM) | 71 | 2 | ROMBUNNO.15aAB‐11 | 1160 | Sep. 23, 2016 |
| 31 | イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 77th | | ROMBUNNO.15p‐P11‐8 | | Sep. 1, 2016 |
| 32 | NbSe2/WSe2ファンデルワールスヘテロ接合における伝導特性 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 77th | | ROMBUNNO.16a‐A32‐4 | | Sep. 1, 2016 |
| 33 | イオン注入による欠陥制御を用いて作製した圧縮歪みSi/Si1-xCxヘテロ構造の熱的安定性 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 76th | | ROMBUNNO.13P-2W-5 | | Aug. 31, 2015 |
| 34 | 固体ソースMBE法によるSiテクスチャ基板上へのGeドット積層構造の結晶成長と太陽電池応用 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 76th | | ROMBUNNO.14P-2S-9 | | Aug. 31, 2015 |
| 35 | ホスフィンを利用したSi基板中へのPドーピングによる電界効果パッシベーションの検討 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 76th | | ROMBUNNO.15P-2S-4 | | Aug. 31, 2015 |
| 36 | Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties | Japanese Journal of Applied Physics | 54 | | 08KA01 | | Jun. 11, 2015 |
| 37 | コロイダルリソグラフィを利用したテクスチャSi基板表面へのナノ構造形成とその太陽電池特性 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.11A-C2-2 | | Feb. 26, 2015 |
| 38 | 歪みSi/Si1-xCx/Si(001)ヘテロ構造の結晶性と不純物活性化過程との関係 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.12P-P17-5 | | Feb. 26, 2015 |
| 39 | Arイオン注入法を用いた圧縮歪みSi/緩和Si1-xCxヘテロ構造の作製 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.12A-D5-4 | | Feb. 26, 2015 |
| 40 | イオン注入成長法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造MOSFETの電気特性評価 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.12P-P17-3 | | Feb. 26, 2015 |
| 41 | 変調表面テクスチャにおける光閉じ込め効果の理論的検討 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.11A-C2-1 | | Feb. 26, 2015 |
| 42 | ナノ構造体・結晶シリコン融合構造におけるGeドット積層構造とフォトニックナノ構造の独立形状制御 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 62nd | | ROMBUNNO.12P-C2-3 | | Feb. 26, 2015 |
| 43 | 選択ウェットエッチング技術を利用したナノフォトニック構造・量子ドット結合体の作製と光学特性 | 村田学術振興財団年報 | | 28 | 243 | 250 | Dec. 2014 |
| 44 | 光デバイスの未来を切り拓く量子ドットテクノロジー ナノ構造体・結晶シリコン融合太陽電池の進展 | Optronics | 33 | 394 | 102 | 106 | Oct. 10, 2014 |
| 45 | 結晶成長温度の変化によるフォトニックナノ構造の形状制御と光学特性 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.19P-A25-5 | | Sep. 1, 2014 |
| 46 | イオン注入法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造の結晶性及びデバイス特性評価 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.18P-PB10-6 | | Sep. 1, 2014 |
| 47 | Siテクスチャ基板を用いたGeドット成長とその太陽電池応用 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.19P-A25-4 | | Sep. 1, 2014 |
| 48 | 歪みSi/Si1-xCx/Si(001)構造の不純物活性化過程における結晶性及び電気特性評価 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.18P-PB10-7 | | Sep. 1, 2014 |
| 49 | 表面フォトニックナノ構造における光透過特性と光閉じ込め効果 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.18A-A25-8 | | Sep. 1, 2014 |
| 50 | Integration of Nanostructures with Crystalline Silicon Solar Cells | 日本結晶成長学会誌(CD-ROM) | 41 | 2 | 66 | 73 | Jul. 2014 |
| 51 | 弱反局在測定を用いた歪Ge/SiGe二次元正孔系におけるラシュバスピン軌道相互作用の検出 | 日本物理学会講演概要集 | 69 | 1 | 691 | 691 | Mar. 5, 2014 |
| 52 | フォトニック・テクスチャダブル構造を利用した太陽電池の作製 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 61st | | ROMBUNNO.18P-F6-8 | | Mar. 3, 2014 |
| 53 | イオン注入法がSi1-XCX/Si(001)構造の欠陥形成過程に及ぼす効果 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 61st | | ROMBUNNO.17A-PG2-4 | | Mar. 3, 2014 |
| 54 | 不純物イオン注入および熱処理がSi1-xCx層の結晶性に及ぼす影響 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 61st | | ROMBUNNO.17A-PG2-3 | | Mar. 3, 2014 |
| 55 | Ge量子ドット積層フォトニックナノ構造を用いた光キャリア生成増大 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 61st | | ROMBUNNO.18P-E12-6 | | Mar. 3, 2014 |
| 56 | 圧縮歪みSi/Si1-XCX/Si(100)ヘテロ構造における炭素傾斜組成の電気伝導特性への効果 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 61st | | ROMBUNNO.17A-PG2-2 | | Mar. 3, 2014 |
| 57 | Integration of Nanostructures with Crystalline Silicon Solar Cells | 日本結晶成長学会誌(CD-ROM) | 41 | 2 | | | 2014 |
| 58 | Investigation of the Cause of Reduced Open Circuit Voltage in Ge/Si Quantum Dot Solar Cells | 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | | | 1103 | 1105 | 2014 |
| 59 | Light Trapping in Large-Scale Photonic Nanostructures Fabricated from Vertically Aligned Ge Quantum Dots on Crystalline Silicon | 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | | | 1257 | 1259 | 2014 |
| 60 | 固相成長法によるCap‐Si/SiGe/Si(110)ヘテロ構造の形成と界面準位及び移動度の評価 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 74th | | ROMBUNNO.17P-P8-2 | | Aug. 31, 2013 |
| 61 | 圧縮歪みSi/Si1-XCX/Si(100)ヘテロ構造における結晶欠陥形成過程の研究 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 74th | | ROMBUNNO.18A-B4-9 | | Aug. 31, 2013 |
| 62 | ガスソースMBE法によるシリコン・炭素混晶の結晶成長と欠陥形成過程の解明 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 60th | | ROMBUNNO.28P-PA2-4 | | Mar. 11, 2013 |
| 63 | マスクレスウェットエッチングで形成したフォトニックナノ構造の形状制御と光学特性 | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 60th | | ROMBUNNO.30P-A4-8 | | Mar. 11, 2013 |
| 64 | Ge/SiGe量子井戸におけるランダウ準位反交差と弱反局在効果の観測 | 日本物理学会講演概要集 | 68 | 1 | 759 | | Mar. 5, 2013 |
| 65 | ナノ構造体・結晶シリコン融合太陽電池 | 薄膜太陽電池セミナー | 5th | | 57‐60 | | 2013 |
| 66 | Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots | Conference Record of the IEEE Photovoltaic Specialists Conference | | | 330 | 332 | 2013 |
| 67 | ナノ構造体・結晶シリコン融合構造の作製とその太陽電池特性 | 薄膜太陽電池セミナー | 5th | | 127 | | 2013 |
| 68 | 電子顕微鏡によるGe/Si量子ドット構造における混晶化の解析 | エレクトロセラミックス研究討論会講演予稿集 | 32nd | | 31 | | Oct. 26, 2012 |
| 69 | 中性粒子ビーム酸化膜を用いた超高速歪みGeチャネルデバイス開発 | 東北大学流体科学研究所共同利用・共同研究拠点流体科学研究拠点活動報告書 | 2011 | | 47 | 48 | Oct. 2012 |
| 70 | Ge/Si量子ドット構造における局所弾性場のイメージング | 日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) | 25th | | ROMBUNNO.3R17 | | Sep. 12, 2012 |
| 71 | Ge量子ドット構造における局所弾性場の解析 | 日本金属学会講演概要(CD-ROM) | 151st | | ROMBUNNO.703 | | Sep. 3, 2012 |
| 72 | CMPによるGe表面の平坦化と歪みGOI(111)基板の作製 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13A-J-7 | | Aug. 27, 2012 |
| 73 | 選択的イオン注入法により歪み制御したSiGe疑似基板上への一軸歪みSiGeチャネル形成 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13A-J-8 | | Aug. 27, 2012 |
| 74 | n‐GeへのSbデルタドーピングにおけるSi添加の効果 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13A-J-4 | | Aug. 27, 2012 |
| 75 | BaSi2エピタキシャル薄膜へのPH3注入及び高温アニール | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.14A-F2-4 | | Aug. 27, 2012 |
| 76 | 角度分解X線光電子分光法によるGeにδドープしたSbの深さ方向分布 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13P-PA10-6 | | Aug. 27, 2012 |
| 77 | Ge/Si量子ドットにおけるキャリア取り出し効率の照射光強度依存性 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.11A-F1-8 | | Aug. 27, 2012 |
| 78 | マスクレスウェットエッチングを利用したGe量子ドット構造上へのナノフォトニック構造形成と光学特性評価 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.12P-F6-16 | | Aug. 27, 2012 |
| 79 | 結晶シリコン太陽電池の表面フォトニック構造についてFDTD法を用いた光学応答の評価 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13P-B1-16 | | Aug. 27, 2012 |
| 80 | Ge/SiGe2次元ホール系におけるランダウ準位交差の観測 | 日本物理学会講演概要集 | 67 | 2 | 620 | 620 | Aug. 24, 2012 |
| 81 | 圧縮歪みGeチャネル変調ドープ構造の磁気輸送特性 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.17A-DP4-2 | | Feb. 29, 2012 |
| 82 | Si(110)基板上に形成したSiGe nMOSFETの電子移動度の評価 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.17A-DP4-5 | | Feb. 29, 2012 |
| 83 | Si‐MOSFET構造におけるスピン蓄積の検出 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.17A-B4-10 | | Feb. 29, 2012 |
| 84 | Fe3Si/n+‐Ge/n‐Ge素子におけるスピン蓄積の生成・検出 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.17A-B4-3 | | Feb. 29, 2012 |
| 85 | Si‐capによるHfO2/歪みGe界面のHfジャーマネイト形成の抑制 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.15P-GP1-13 | | Feb. 29, 2012 |
| 86 | 水素ラジカルによる選択加熱現象を利用したSi1-XGeX薄膜形成技術 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.16P-F11-3 | | Feb. 29, 2012 |
| 87 | Ge/SiGeヘテロ構造中に形成される二次元正孔ガス中の正孔散乱機構の解析 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.17A-E3-2 | | Feb. 29, 2012 |
| 88 | (110)傾斜基板上に形成した歪みSiの電子移動度と結晶性との関係 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.16A-F11-8 | | Feb. 29, 2012 |
| 89 | 圧縮歪みSi/Si1-XCX/Si(100)ヘテロ構造の形成と評価 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.16A-F11-7 | | Feb. 29, 2012 |
| 90 | SiGe/Si(110)ヘテロ構造の正孔移動度測定 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.16A-F11-9 | | Feb. 29, 2012 |
| 91 | Magnetotransport properties of 20-nm-thick strained Ge with various compressive stresses | | - | | - | | 2012 |
| 92 | Enhanced carrier extraction under strong light irradiation in Ge/Si type-II quantum dot solar cells | Conference Record of the IEEE Photovoltaic Specialists Conference | | | 3200 | 3203 | 2012 |
| 93 | Formation of high-quality Ge(111) layers on Si (111) substrates | | - | | - | | 2012 |
| 94 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy | 電子情報通信学会技術研究報告 | 111 | 249(SDM2011 97-114) | 37 | 41 | Oct. 13, 2011 |
| 95 | 三端子Hanle効果測定法を用いたSi中のスピン蓄積の検出 | 日本磁気学会学術講演概要集 | 35th | | 338 | | Sep. 27, 2011 |
| 96 | n‐Ge中に生成されたスピン蓄積の検出 | 日本磁気学会学術講演概要集 | 35th | | 340 | | Sep. 27, 2011 |
| 97 | 水素ラジカルによる選択加熱現象を利用した多結晶Si1-xGex形成技術 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 72nd | | ROMBUNNO.1P-M-11 | | Aug. 16, 2011 |
| 98 | BF2イオン照射したBaSi2エピタキシャル薄膜の高温アニール | 応用物理学会学術講演会講演予稿集(CD-ROM) | 72nd | | ROMBUNNO.2A-W-4 | | Aug. 16, 2011 |
| 99 | 2段階成長法によるSi(111)基板上Ge薄膜の作製 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 72nd | | ROMBUNNO.31A-P15-1 | | Aug. 16, 2011 |
| 100 | Ge/Siエピタキシャル成長を利用した薄膜歪GOI(111)構造の形成 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 72nd | | ROMBUNNO.31A-P15-2 | | Aug. 16, 2011 |
| 101 | ハンル効果測定を用いた強磁性合金/シリコン界面近傍におけるスピン蓄積の電気的検出 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 58th | | ROMBUNNO.25A-KM-13 | | Mar. 9, 2011 |
| 102 | 貼り合わせ法による歪みGOI基板の作製 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 58th | | ROMBUNNO.27P-KF-2 | | Mar. 9, 2011 |
| 103 | 角度分解X線光電子分光法によるHfO2/Si/歪みGe/SiGe構造の評価 III | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 58th | | ROMBUNNO.27A-KW-4 | | Mar. 9, 2011 |
| 104 | 圧縮歪ゲルマニウム中の自己拡散 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 58th | | ROMBUNNO.24P-KM-1 | | Mar. 9, 2011 |
| 105 | 選択的イオン注入法により作製される一軸性歪みSiGeの表面構造評価 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.14P-ZQ-6 | | Aug. 30, 2010 |
| 106 | Ge(111)への高濃度Sbデルタドーピングによる低抵抗コンタクト形成 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.14P-ZQ-8 | | Aug. 30, 2010 |
| 107 | イオン注入法によるSi(111)基板上緩和SiGeバッファ層の作製 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.14P-ZQ-5 | | Aug. 30, 2010 |
| 108 | 角度分解X線光電子分光法によるHfO2/Si/歪Ge/SiGe構造の評価 II | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.15P-ZA-12 | | Aug. 30, 2010 |
| 109 | Ar+およびSi+イオン注入欠陥がSiGe層の歪緩和に与える影響 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.14P-ZQ-4 | | Aug. 30, 2010 |
| 110 | CVDにより作製した歪みGeチャネルの電気伝導特性 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.14P-NH-14 | | Aug. 30, 2010 |
| 111 | 低抵抗コンタクト形成へ向けたGeへのSbデルタドーピングとその偏析現象 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 57th | | ROMBUNNO.17P-TJ-14 | | Mar. 3, 2010 |
| 112 | Siキャップ層による歪みGeチャネルの歪み安定性向上 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 57th | | ROMBUNNO.19A-TK-6 | | Mar. 3, 2010 |
| 113 | 角度分解X線光電子分光法によるHfO2/Si/歪Ge/SiGe構造の評価 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 57th | | ROMBUNNO.18P-P9-10 | | Mar. 3, 2010 |
| 114 | 選択的イオン注入法により作製された一軸性歪みSiGeの歪み状態に与えるメサエッチの影響 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 57th | | ROMBUNNO.17P-TJ-12 | | Mar. 3, 2010 |
| 115 | HfO2/歪みGeチャネル変調ドープ構造における正孔移動度の正孔密度依存性 | 応用物理学会学術講演会講演予稿集 | 70th | 1 | 375 | | Sep. 8, 2009 |
| 116 | Si(111)基板上へのSiGe層のMBE成長と結晶性評価 | 応用物理学会学術講演会講演予稿集 | 70th | 1 | 375 | | Sep. 8, 2009 |
| 117 | 選択的イオン注入法によりSiGe層に導入される一軸性歪み状態の線幅依存性 | 応用物理学関係連合講演会講演予稿集 | 56th | 1 | 430 | | Mar. 30, 2009 |
| 118 | 選択的イオン注入法により作製したSiGe層における一軸性歪みの観測 | 応用物理学会学術講演会講演予稿集 | 69th | 1 | 347 | | Sep. 2, 2008 |
| 119 | Siイオン注入法により作製されたSiGeバッファー層の歪緩和過程 | 応用物理学会学術講演会講演予稿集 | 69th | 1 | 347 | | Sep. 2, 2008 |
| 120 | 選択的イオン注入法によるSiGe層の面内歪み制御 | 応用物理学関係連合講演会講演予稿集 | 55th | 1 | 422 | | Mar. 27, 2008 |
| 121 | イオン注入法による高Ge組成薄膜緩和SiGe層の開発 | 応用物理学関係連合講演会講演予稿集 | 55th | 1 | 422 | | Mar. 27, 2008 |
| 122 | イオン注入法により作製した薄膜SiGe緩和層上の歪みSi‐nMOSFET | 応用物理学会学術講演会講演予稿集 | 68th | 1 | 402 | | Sep. 4, 2007 |
| 123 | TEOS酸化膜の堆積によるsSOI構造の熱的安定性の改善 | 応用物理学会学術講演会講演予稿集 | 68th | 1 | 399 | | Sep. 4, 2007 |
| 124 | Si+イオン注入法による高品質SiGeバッファー層の作製 | 応用物理学関係連合講演会講演予稿集 | 54th | 1 | 426 | | Mar. 27, 2007 |
| 125 | 厚膜歪みSOI(sSOI)構造の熱的安定性 | 応用物理学会学術講演会講演予稿集 | 67th | 1 | 366 | | Aug. 29, 2006 |
| 126 | Geイオン注入法による超平坦な薄膜SiGe緩和層の作製 | 応用物理学関係連合講演会講演予稿集 | 53rd | 1 | 407 | | Mar. 22, 2006 |
| 127 | 歪みSOI(sSOI)構造の熱的安定性 | 応用物理学会学術講演会講演予稿集 | 66th | 1 | 301 | | Sep. 7, 2005 |
