| Published Papers |
| No. | Ｔitle | Journal | Vol | No | Start Page | End Page | Publication date | DOI | Referee |
| 1 | Electrically induced change in HfO<inf>2</inf>/1-monolayer TiO<inf>2</inf>/SiO<inf>2</inf>metal-oxide-semiconductor stacks: Capacitance-voltage and hard X-ray photoelectron spectroscopy studies  | Applied Physics Express | 14 | 7 | 071005 | 071005 | Jul. 1, 2021 | https://doi.org/10.35848/1882-0786/ac0b081 | Refereed |
| 2 | Analysis of Effect of Plasma Nitridation on SiO2/SiC by Angle-Resolved X-ray Photoelectron Spectroscopy | SPring-8/SACLA利用研究成果集(Web) | 8 | 2 | 251 | 253 | 2020 | https://doi.org/10.18957/rr.8.2.2511 | Refereed |
| 3 | Atomically Controlled Surfaces, Interfaces and Nanostructures/Scanning Probe Microscopy | Japanese Journal of Applied Physics | 58 | SI | | | Jan. 1, 2019 | https://doi.org/10.7567/1347-4065/ab28641 | Refereed |
| 4 | Effect of strain on the binding energy of Ge 2p and 3d core level | Semiconductor Science and Technology | 34 | 1 | | | Jan. 1, 2019 | https://doi.org/10.1088/1361-6641/aaf3ee1 | Refereed |
| 5 | Study on Al<inf>2</inf>O<inf>3</inf>/Ge interface formed by ALD directly on epitaxial Ge | Semiconductor Science and Technology | 33 | 12 | | | Nov. 20, 2018 | https://doi.org/10.1088/1361-6641/aaec511 | Refereed |
| 6 | Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs∗ | e-Journal of Surface Science and Nanotechnology | 16 | | 257 | 261 | Jun. 9, 2018 | https://doi.org/10.1380/ejssnt.2018.2571 | Refereed |
| 7 | The AR-XPS Study on Depth Profile of N Atom in Oxynitride Film Formed on 4H-SiC by Radical Nitridation | SPring-8/SACLA Research Report | 6 | 1 | 13 | 16 | 2018 | https://doi.org/10.18957/rr.6.1.131 | Refereed |
| 8 | Electrical properties of epitaxial Lu- or Y-doped La<inf>2</inf>O<inf>3</inf>/La<inf>2</inf>O<inf>3</inf>/Ge high-k gate-stacks | Materials Science in Semiconductor Processing | 70 | | 260 | 264 | Nov. 1, 2017 | https://doi.org/10.1016/j.mssp.2016.11.0161 | Refereed |
| 9 | Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy | Japanese Journal of Applied Physics | 56 | 5 | | | May. 2017 | https://doi.org/10.7567/JJAP.56.0513011 | Refereed |
| 10 | Improving the barrier ability of Ti in Cu through-silicon vias through vacuum annealing | Japanese Journal of Applied Physics | 56 | 4 | | | Apr. 2017 | https://doi.org/10.7567/JJAP.56.04CC081 | Refereed |
| 11 | Angle-resolved photoelectron spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001) on-Axis and 4° off-axis substrates | ECS Transactions | 77 | 6 | 51 | 57 | 2017 | https://doi.org/10.1149/07706.0051ecst1 | Refereed |
| 12 | La<inf>2</inf>O<inf>3</inf> gate dielectrics for AlGaN/GaN HEMT | Microelectronics Reliability | 60 | | 16 | 19 | May. 1, 2016 | https://doi.org/10.1016/j.microrel.2016.02.0041 | Refereed |
| 13 | Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation | Applied Physics Express | 9 | 5 | | | May. 2016 | https://doi.org/10.7567/APEX.9.0521011 | Refereed |
| 14 | Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001) | Japanese Journal of Applied Physics | 55 | 4 | | | Apr. 2016 | https://doi.org/10.7567/JJAP.55.04EB041 | Refereed |
| 15 | Study of Clustering of Impurities Doped in Si Crystals Depending on Annealing Conditions and Concentration by Using Soft X-ray Photoelectron Spectroscopy | SPring-8/SACLA利用研究成果集(Web) | 4 | 1 | 11 | 17 | 2016 | https://doi.org/10.18957/rr.4.1.111 | Refereed |
| 16 | Effect of atomic-arrangement matching on La<inf>2</inf>O<inf>3</inf>/Ge heterostructures for epitaxial high- k -gate-stacks | Journal of Applied Physics | 118 | 22 | | | Dec. 14, 2015 | https://doi.org/10.1063/1.49371471 | Refereed |
| 17 | Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment | Applied Physics Letters | 104 | 17 | 172109-1 - 172109-4 | | Apr. 2014 | https://doi.org/10.1063/1.48750161 | Refereed |
| 18 | Angle-resolved photoelectron spectroscopy studies of initial stage of oxidation on C-face 4H-SiC | ECS Transactions | 64 | 7 | 245 | 252 | 2014 | https://doi.org/10.1149/06407.0245ecst1 | Refereed |
| 19 | Detection of effect of strain on the valence band structure of SiGe by HXPES with high spatial resolution | ECS Transactions | 64 | 6 | 431 | 439 | 2014 | https://doi.org/10.1149/06406.0431ecst1 | Refereed |
| 20 | AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS | Journal of Electron Spectroscopy and Related Phenomena | 190 | PART B | 295 | 301 | Oct. 2013 | https://doi.org/10.1016/j.elspec.2013.06.0101 | Refereed |
| 21 | Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface | MICROELECTRONIC ENGINEERING | 109 | - | 197 | 199 | Sep. 2013 | https://doi.org/10.1016/j.mee.2013.03.0041 | Refereed |
| 22 | Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302) | Japanese Journal of Applied Physics | 52 | 6 PART 1 | 031302-1～031302-14 | | Jun. 2013 | https://doi.org/10.7567/JJAP.52.0692031 | Refereed |
| 23 | La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode | SOLID-STATE ELECTRONICS | 82 | - | 29 | 33 | Apr. 2013 | https://doi.org/10.1016/j.sse.2013.01.0131 | Refereed |
| 24 | Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100) | 15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15) | 417 | | | | 2013 | https://doi.org/10.1088/1742-6596/417/1/0120151 | Refereed |
| 25 | Interfacial layer formation at ZnO/CdS interface | APPLIED SURFACE SCIENCE | 258 | 20 | 8090 | 8093 | Aug. 2012 | https://doi.org/10.1016/j.apsusc.2012.04.1771 | Refereed |
| 26 | Valence number transition and silicate formation of cerium oxide films on Si(100) | VACUUM | 86 | 10 | 1513 | 1516 | Apr. 2012 | https://doi.org/10.1016/j.vacuum.2012.02.0501 | Refereed |
| 27 | Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique | JAPANESE JOURNAL OF APPLIED PHYSICS | 51 | 4 | | | Apr. 2012 | https://doi.org/10.1143/JJAP.51.04DA071 | Refereed |
| 28 | Locally Induced Stress in Stacked Ultrathin Si wafers: XPS and micro-Raman study | Proceedings of the 62th Electronic Components and Technology Conference (ECTC) | | | 625 | 629 | 2012 | https://doi.org/10.1109/ECTC.2012.62488961 | Refereed |
| 29 | Angle-Resolved PES Studies on Transition Layers at SiO2/SiC Interfaces | GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2 | 50 | 3 | 243 | 250 | 2012 | https://doi.org/10.1149/05003.0243ecst1 | Not refereed |
| 30 | Application of Cr K alpha X-ray photoelectron spectroscopy system to overlayer thickness determination | SURFACE AND INTERFACE ANALYSIS | 43 | 13 | 1632 | 1635 | Dec. 2011 | https://doi.org/10.1002/sia.37601 | Refereed |
| 31 | Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods | JAPANESE JOURNAL OF APPLIED PHYSICS | 50 | 10 | 10PD03-1 - 10PD03-4 | | Oct. 2011 | https://doi.org/10.1143/JJAP.50.10PD031 | Not refereed |
| 32 | Study of High-kappa/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy | JAPANESE JOURNAL OF APPLIED PHYSICS | 50 | 10 | 10PD02-1 - 10PD02-5 | | Oct. 2011 | https://doi.org/10.1143/JJAP.50.10PD021 | Not refereed |
| 33 | In diffusion and electronic energy structure in polymer layers on In tin oxide | THIN SOLID FILMS | 519 | 13 | 4216 | 4219 | Apr. 2011 | https://doi.org/10.1016/j.tsf.2011.02.0341 | Refereed |
| 34 | XPS Study on Chemical Bonding States of high-kappa/high-mu Gate Stacks for Advanced CMOS | ULSI PROCESS INTEGRATION 7 | 41 | 7 | 137 | 146 | 2011 | https://doi.org/10.1149/1.36332931 | Not refereed |
| 35 | Thinning Process Induced Surface Defects in Ultra-Thin Si Wafer | Extended Abstract of International Conference on Solid State Devices and Materials (SSDM) | | | 50 | 51 | 2011 | | Refereed |
| 36 | Effect of Various Surface Treatments on Chemical Bonding State at La2O3/In0.53Ga0.47As and on In0.53Ga0.47As Surface | PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 | 41 | 3 | 265 | 272 | 2011 | https://doi.org/10.1149/1.36330431 | Not refereed |
| 37 | Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal-Oxide-Semiconductor Capacitors | JAPANESE JOURNAL OF APPLIED PHYSICS | 49 | 6 | 060202-1 - 060202-3 | | Jun. 2010 | https://doi.org/10.1143/JJAP.49.0602021 | Not refereed |
| 38 | Angle-resolved phototelectron study on the structures of silicon nitride films and Si(3)N(4)/Si interfaces formed using nitrogen-hydrogen radicals (vol 104, 114112, 2008) | JOURNAL OF APPLIED PHYSICS | 107 | 6 | | | Mar. 2010 | https://doi.org/10.1063/1.33667051 | Not refereed |
| 39 | SrO capping effect for La2O3/Ce-silicate gate dielectrics. | Microelectronics Reliability | 50 | 3 | 356 | 359 | Mar. 2010 | https://doi.org/10.1016/j.microrel.2009.12.0041 | Refereed |
| 40 | Wafer Thinning, Bonding, and Interconnects Induced Local Strain/Stress in 3D-LSIs with Fine-Pitch High-Density Microbumps and Through-Si Vias | IEEE International Electron Devices Meeting (IEDM) Technical Digest | | | 30 | 34 | 2010 | https://doi.org/10.1109/IEDM.2010.57032791 | Refereed |
| 41 | Study on chemical bonding states at high-κ/Si and high-κ/Ge interfaces by XPS | ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | | | 990 | 993 | 2010 | https://doi.org/10.1109/ICSICT.2010.56675111 | Refereed |
| 42 | Soft X-ray photoelectron spectroscopy study of activation and deactivation of impurities in shallow junctions | ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | | | 863 | 866 | 2010 | https://doi.org/10.1109/ICSICT.2010.56674541 | Refereed |
| 43 | XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS | DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 28 | 2 | 129 | 137 | 2010 | https://doi.org/10.1149/1.33725701 | Not refereed |
| 44 | Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO2 Layer | APPLIED PHYSICS EXPRESS | 3 | 5 | 056701 (3 pages) | | 2010 | https://doi.org/10.1143/APEX.3.0567011 | Not refereed |
| 45 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved X-ray Photoelectron Spectroscopy | PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8 | 33 | 3 | 467 | 472 | 2010 | https://doi.org/10.1149/1.34816351 | Not refereed |
| 46 | Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film | JOURNAL OF APPLIED PHYSICS | 106 | 12 | pp. 124903-1-124903-6 | | Dec. 2009 | https://doi.org/10.1063/1.32697051 | Not refereed |
| 47 | Report on the 47th IUVSTA Workshop 'Angle-Resolved XPS: the current status and future prospects for angle-resolved XPS of nano and subnano films' | SURFACE AND INTERFACE ANALYSIS | 41 | 11 | 840 | 857 | Nov. 2009 | https://doi.org/10.1002/sia.31051 | Not refereed |
| 48 | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor | 109 | | 157 | 160 | Jun. 2009 | | Refereed |
| 49 | Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures | JAPANESE JOURNAL OF APPLIED PHYSICS | 48 | 4 | 041201-041206 | | Apr. 2009 | https://doi.org/10.1143/JJAP.48.0412011 | Not refereed |
| 50 | Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 25 | 6 | 321 | 326 | 2009 | https://doi.org/10.1149/1.32066301 | Not refereed |
| 51 | Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride | Proceedings of the International Semiconductor Technology Conference/China Semiconductor Technology International Conference (ISTC/CSTIC) | | | 85 | 89 | 2009 | | Refereed |
| 52 | Impact of Remnant Stress/Strain and Metal Contamination in 3D-LSIs with Through-Si Vias Fabricated by Wafer Thinning and Bonding | IEEE International Electron Devices Meeting (IEDM) Technical Digest | | | 361 | 364 | 2009 | https://doi.org/10.1109/IEDM.2009.54243481 | Refereed |
| 53 | Electrical characterization of MOS memory devices with self-assembled tungsten nano-dots dispersed in silicon nitride | ECS Transactions | 18 | 1 | 33 | 37 | 2009 | https://doi.org/10.1149/1.30964231 | Refereed |
| 54 | Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals | JOURNAL OF APPLIED PHYSICS | 104 | 11 | 114112-1 - 114112-8 | | Dec. 2008 | https://doi.org/10.1063/1.30024181 | Not refereed |
| 55 | Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements | JOURNAL OF APPLIED PHYSICS | 104 | 9 | pp. 093709-1 - 093709-5 | | Nov. 2008 | https://doi.org/10.1063/1.30140331 | Not refereed |
| 56 | Correlation between the dipole moment induced at the Slater transition state and the optical dielectric constant of Si and Al compounds | APPLIED PHYSICS LETTERS | 93 | 19 | 193503 - 193503-3 | | Nov. 2008 | https://doi.org/10.1063/1.29881911 | Not refereed |
| 57 | Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. | Microelectronics Reliability | 48 | 11-12 | 1769 | 1771 | Nov. 2008 | https://doi.org/10.1016/j.microrel.2008.09.0041 | Not refereed |
| 58 | Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy | JOURNAL OF APPLIED PHYSICS | 104 | 7 | pp. 074316-1 - 074316-5 | | Oct. 2008 | https://doi.org/10.1063/1.29736651 | Not refereed |
| 59 | Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states | SURFACE AND INTERFACE ANALYSIS | 40 | 3-4 | 423 | 426 | Mar. 2008 | https://doi.org/10.1002/sia.26281 | Not refereed |
| 60 | Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 16 | 5 | 171 | + | 2008 | https://doi.org/10.1149/1.29815991 | Not refereed |
| 61 | Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds | PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 100 | No. 1 | pp. 012011-1-012011-4 | | 2008 | https://doi.org/10.1088/1742-6596/100/1/0120111 | Not refereed |
| 62 | New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-ray Photoelectron Spectroscopy | ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | | | 142 | + | 2008 | | Refereed |
| 63 | Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 46 | 4B | 1895 | 1898 | Apr. 2007 | https://doi.org/10.1143/JJAP.46.18951 | Not refereed |
| 64 | Subnitride and valence band offset at Si3N4/Si interface formed using nitrogen-hydrogen radicals | APPLIED PHYSICS LETTERS | 90 | 12 | 123114-1 - 123114-3 | | Mar. 2007 | https://doi.org/10.1063/1.27150371 | Not refereed |
| 65 | Angle-resolved photoelectron spectroscopy on gate insulators. | Microelectronics Reliability | 47 | 1 | 20 | 26 | Jan. 2007 | https://doi.org/10.1016/j.microrel.2006.03.0031 | Not refereed |
| 66 | Soft X-ray absorption and emission study of silicon oxynitride/Si(100) interface | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 46 | 1-3 | L77 | L79 | Jan. 2007 | https://doi.org/10.1143/jjap.46.l771 | Not refereed |
| 67 | New Approach to Highly Accurate Depth Profiling using Angle-resolved Photoelectron Spectroscopy | 表面科学 | 28 | 11 | 620 | 625 | 2007 | https://doi.org/10.1380/jsssj.28.6201 | Not refereed |
| 68 | Photoelectron spectroscopy studies of SiO(2)/Si interfaces | PROGRESS IN SURFACE SCIENCE | 82 | 1 | 3 | 54 | 2007 | https://doi.org/10.1016/j.progsurf.2006.10.0011 | Not refereed |
| 69 | Angle-resolved photoelectron spectroscopy study on ultrathin gate dielectrics | ECS Transactions | 11 | 6 | 183 | 194 | 2007 | https://doi.org/10.1149/1.27783761 | Not refereed |
| 70 | X-ray photoelectron spectroscopy study of dielectric constant for Si compounds | APPLIED PHYSICS LETTERS | 89 | 15 | pp. 154103-1 – 154103-3 | | Oct. 2006 | https://doi.org/10.1063/1.23611771 | Not refereed |
| 71 | Interfacial structure of HfON/SiN/Si gate stacks | The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy | | | | | Sep. 2006 | | Not refereed |
| 72 | The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density | Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices | | | 265 | 270 | Jul. 2006 | | Refereed |
| 73 | Thermal stability of Gd2O3/Si(100) interfacial transition layer | JOURNAL DE PHYSIQUE IV | 132 | - | 273 | 277 | Mar. 2006 | https://doi.org/10.1051/jp4:20061320521 | Not refereed |
| 74 | Valence charges for ultrathin SiO2 films formed on Si(100) | JOURNAL DE PHYSIQUE IV | 132 | - | 83 | 86 | Mar. 2006 | https://doi.org/10.1051/jp4:20061320161 | Not refereed |
| 75 | Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8 | International Journal of High Speed Electronics and Systems | 16 | 1 | 353 | 364 | Mar. 2006 | https://doi.org/10.1142/S01291564060036801 | Refereed |
| 76 | Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8 | FRONTIERS IN ELECTRONICS | 41 | No. 1 | 353 | + | 2006 | https://doi.org/10.1142/S01291564060036801 | Not refereed |
| 77 | Off-angle dependence of characteristics of 4H-SiC-oxide interfaces | Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 527-529 | | 1003 | 1006 | 2006 | https://doi.org/10.4028/www.scientific.net/MSF.527-529.10031 | Refereed |
| 78 | Hard and soft X-ray excited photoelectron spectroscopy study on high-kappa gate insulators | 2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS | | | 69 | + | 2006 | | Refereed |
| 79 | Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation | Journal of Applied Physics | 100 | 5 | pp. 053710-1 - 053710-7 | | 2006 | https://doi.org/10.1063/1.23454711 | Not refereed |
| 80 | Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure | ECS Transactions | 3 | 2 | 169 | 173 | 2006 | https://doi.org/10.1149/1.23562761 | Not refereed |
| 81 | High Quality Si3N4 Gate Dielectric For Sub-100nm ULSI Devices | PROCEEDINGS OF THE 3RD STUDENT-ORGANIZING INTERNATIONAL MINI-CONFERENCE ON INFORMATION ELECTRONICS SYSTEM | | | 143 | 146 | Oct. 2005 | | Refereed |
| 82 | Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-8 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 547 | 1 | 50 | 55 | Jul. 2005 | https://doi.org/10.1016/j.nima.2005.05.0111 | Not refereed |
| 83 | A novel probe of intrinsic electronic structure: hard X-ray photoemission spectroscopy | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 144 | - | 1063 | 1065 | Jun. 2005 | https://doi.org/10.1016/j.elspec.2005.01.0441 | Not refereed |
| 84 | Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films | MICROELECTRONIC ENGINEERING | 80 | No. 5 | 98 | 101 | Jun. 2005 | https://doi.org/10.1016/j.mee.2005.04.0491 | Not refereed |
| 85 | Angle-resolved XPS studies on transition layers at SiO2/Si interfaces | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 144 | - | 457 | 460 | Jun. 2005 | https://doi.org/10.1016/j.elspec.2005.01.2211 | Not refereed |
| 86 | Determination of electron escape depth in ultrathin silicon oxide | APPLIED PHYSICS LETTERS | 86 | 8 | 081911_1 -081911_3 | | Feb. 2005 | https://doi.org/10.1063/1.18680661 | Not refereed |
| 87 | Characterization of oxide films on SiC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation | Materials Science Forum | 483-485 | - | 585 | 588 | 2005 | https://doi.org/10.4028/0-87849-963-6.5851 | Not refereed |
| 88 | HR-XPS Study on Si3N4/Si Interface Structures and its Correlation with Hysteresis in C-V Curves | Electrochemical Society Inc., ECS Transactions | Vol. 1 | No. 1 | 267 | 276 | 2005 | | Not refereed |
| 89 | Thermal Stability of Lanthanum Oxide/Si(100) Interfacial Transition Layer | Electrochemical Society Inc., ECS Transactions | Vol. 1 | No. 1 | 87 | 95 | 2005 | | Not refereed |
| 90 | Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy | 2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS | | | 155 | 160 | 2005 | | Refereed |
| 91 | Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C | APPLIED SURFACE SCIENCE | 237 | 1-4 | 134 | 138 | Oct. 2004 | https://doi.org/10.1016/j.apsusc.2004.06.0421 | Not refereed |
| 92 | Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer | APPLIED SURFACE SCIENCE | 234 | 1-4 | 493 | 496 | Jul. 2004 | https://doi.org/10.1016/j.apsusc.2004.05.0321 | Not refereed |
| 93 | Dependence of SiO2/Si interface structure on low-temperature oxidation process | APPLIED SURFACE SCIENCE | 234 | 1-4 | 197 | 201 | Jul. 2004 | https://doi.org/10.1016/j.apsusc.2004.05.0441 | Not refereed |
| 94 | X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 degrees C | APPLIED PHYSICS LETTERS | 84 | 19 | 3756 | 3758 | May. 2004 | https://doi.org/10.1063/1.17377931 | Not refereed |
| 95 | Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer | MICROELECTRONIC ENGINEERING | 72 | 1-4 | 283 | 287 | Apr. 2004 | https://doi.org/10.1016/j.mee.2004.01.0051 | Not refereed |
| 96 | Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy | APPLIED PHYSICS LETTERS | 83 | 16 | 3422 | 3424 | Oct. 2003 | https://doi.org/10.1063/1.16162041 | Not refereed |
| 97 | High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems | APPLIED PHYSICS LETTERS | 83 | 5 | 1005 | 1007 | Aug. 2003 | https://doi.org/10.1063/1.15957141 | Not refereed |
| 98 | Depth profiling of oxynitride film formed on Si(100) by photon energy dependent photoelectron spectroscopy | APPLIED SURFACE SCIENCE | 216 | 1-4 | 287 | 290 | Jun. 2003 | https://doi.org/10.1016/S0169-4332(03)00389-11 | Not refereed |
| 99 | Chemical Structures near The Rare Earth Oxide Film/Si(100) Interface | Technical report of IEICE. SDM | 103 | 149 | 25 | 29 | Jun. 2003 | | Not refereed |
| 100 | Chemical and electronic structures of Lu2O3/Si interfacial transition layer | APPLIED SURFACE SCIENCE | 216 | 1-4 | 234 | 238 | Jun. 2003 | https://doi.org/10.1016/S0169-4332(03)00425-21 | Not refereed |
| 101 | Chemical and electronic structure of SiO2/Si interfacial transition layer | APPLIED SURFACE SCIENCE | 212 | - | 547 | 555 | May. 2003 | https://doi.org/10.1016/S0169-4332(03)00054-01 | Not refereed |
| 102 | Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition | MICROELECTRONIC ENGINEERING | 65 | 3 | 259 | 272 | Mar. 2003 | https://doi.org/10.1016/S0167-9317(02)00898-51 | Not refereed |
| 103 | TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films | APPLIED SURFACE SCIENCE | 203 | - | 400 | 403 | Jan. 2003 | https://doi.org/10.1016/S0169-4332(02)00688-81 | Not refereed |
| 104 | Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition | SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 | 2002 | 2 | 747 | 760 | 2002 | | Refereed |
| 105 | Valence-band offset variation induced by the interface dipole at the SiO2/Si(111) interface | PHYSICAL REVIEW B | 64 | 15 | 155325-1-155325-6 | | Oct. 2001 | | Not refereed |
| 106 | Influence of interface structure on oxidation rate of silicon | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 40 | 1AB | L68 | L70 | Jan. 2001 | https://doi.org/10.1143/jjap.40.L681 | Not refereed |
| 107 | Valence-band offset variation induced by the interface dipole at the (formula presented) interface | Physical Review B - Condensed Matter and Materials Physics | 64 | 15 | | | 2001 | https://doi.org/10.1103/PhysRevB.64.1553251 | Refereed |
| 108 | Accurate thickness determination of ultrathin silicon oxide film by x-ray photoelectron spectroscopy | Shinku/Journal of the Vacuum Society of Japan | 44 | 8 | 715 | 719 | 2001 | https://doi.org/10.3131/jvsj.44.7151 | Not refereed |
| 109 | Gate stack preparation with high-k materials in a cluster tool | 2001 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | | | 395 | 398 | 2001 | | Refereed |
| 110 | Atomic structure of SiO2 at SiO2/Si interfaces | APPLIED SURFACE SCIENCE | 166 | 1-4 | 455 | 459 | Oct. 2000 | https://doi.org/10.1016/S0169-4332(00)00469-41 | Not refereed |
| 111 | Detection of interface states correlated with SiO2/Si(111) interface structures | APPLIED SURFACE SCIENCE | 166 | 1-4 | 460 | 464 | Oct. 2000 | https://doi.org/10.1016/S0169-4332(00)00472-41 | Not refereed |
| 112 | Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides | APPLIED SURFACE SCIENCE | 162 | - | 304 | 308 | Aug. 2000 | https://doi.org/10.1016/S0169-4332(00)00208-71 | Not refereed |
| 113 | Atomic-scale surface morphology of ultrathin thermal oxide formed on Si(100) surface | APPLIED SURFACE SCIENCE | 162 | - | 62 | 68 | Aug. 2000 | https://doi.org/10.1016/S0169-4332(00)00171-91 | Not refereed |
| 114 | Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100) | APPLIED SURFACE SCIENCE | 159 | - | 67 | 71 | Jun. 2000 | https://doi.org/10.1016/S0169-4332(00)00052-01 | Not refereed |
| 115 | The initial growth steps of ultrathin gate oxides | MICROELECTRONIC ENGINEERING | 48 | 1-4 | 17 | 24 | Sep. 1999 | https://doi.org/10.1016/S0167-9317(99)00329-91 | Not refereed |
| 116 | Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons | THIN SOLID FILMS | 343 | - | 401 | 403 | Apr. 1999 | https://doi.org/10.1016/S0040-6090(98)01664-21 | Not refereed |
| 117 | Elastic scattering of Si 2p photoelectrons in silicon oxide | APPLIED SURFACE SCIENCE | 144-45 | - | 297 | 300 | Apr. 1999 | https://doi.org/10.1016/S0169-4332(98)00813-71 | Not refereed |
| 118 | Structural transition layer at SiO2/Si interfaces | PHYSICAL REVIEW B | 59 | 8 | 5617 | 5621 | Feb. 1999 | https://doi.org/10.1103/PhysRevB.59.56171 | Not refereed |
| 119 | Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO2/Si interface | Solid State Phenomena | 65-66 | | 241 | 244 | 1999 | https://doi.org/10.4028/www.scientific.net/SSP.65-66.2411 | Refereed |
| 120 | Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO(2)/Si interface | SOLID STATE PHENOMENA | 65-6 | - | 241 | 244 | 1999 | | Not refereed |
| 121 | Initial stage of SiO2 valence band formation | APPLIED SURFACE SCIENCE | 123 | - | 542 | 545 | Jan. 1998 | https://doi.org/10.1016/S0169-4332(97)00567-91 | Not refereed |
| 122 | Valence band edge of ultra-thin silicon oxide near the interface | APPLIED SURFACE SCIENCE | 123 | - | 546 | 549 | Jan. 1998 | https://doi.org/10.1016/S0169-4332(97)00568-01 | Not refereed |
| 123 | SiO2 valence band near the SiO2/Si(111) interface | APPLIED SURFACE SCIENCE | 117 | - | 119 | 122 | Jun. 1997 | https://doi.org/10.1016/S0169-4332(97)80063-31 | Not refereed |
| 124 | Valence band discontinuity at and near the SiO2/Si(111) interface | SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR SURFACE PREPARATION | 477 | | 421 | 425 | 1997 | | Not refereed |
| 125 | Effect of chemical preoxidation treatment on the structure of SiO2/Si interfaces | APPLIED SURFACE SCIENCE | 104 | - | 359 | 363 | Sep. 1996 | https://doi.org/10.1016/S0169-4332(96)00171-71 | Not refereed |
| 126 | Initial stage of oxidation of hydrogen-terminated silicon surfaces | APPLIED SURFACE SCIENCE | 104 | - | 323 | 328 | Sep. 1996 | https://doi.org/10.1016/S0169-4332(96)00165-11 | Not refereed |
| 127 | EFFECT OF PREOXIDE ON THE STRUCTURE OF THERMAL OXIDE | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 34 | 1 | 245 | 248 | Jan. 1995 | https://doi.org/10.1143/JJAP.34.2451 | Not refereed |
| 128 | PREPARATION OF YBBA2CU3O7-X FILMS ON SI(100) SUBSTRATES USING SRTIO3 BUFFER LAYERS | APPLIED PHYSICS LETTERS | 61 | 12 | 1459 | 1461 | Sep. 1992 | https://doi.org/10.1063/1.1075171 | Not refereed |
| 129 | INITIAL-STAGE OF SIO2 SI INTERFACE FORMATION ON SI(111) SURFACE | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 31 | 5B | L638 | L641 | May. 1992 | https://doi.org/10.1143/JJAP.31.L6381 | Not refereed |
| 130 | PREPARATION OF AS-DEPOSITED YB-BA-CU-O SUPERCONDUCTING FILMS BY DC ARC-DISCHARGE EVAPORATION METHOD | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 29 | 12 | L2466 | L2468 | Dec. 1990 | | Not refereed |
| 131 | PREPARATION OF YB-BA-CU-O SUPERCONDUCTING FILMS USING AN ARC-DISCHARGE EVAPORATION METHOD | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 28 | 5 | L816 | L818 | May. 1989 | | Not refereed |
| MISC |
| No. | Ｔitle | Journal | Vol | No | Start Page | End Page | Publication date |
| 1 | Evaluation of ALD-TiO2 layer for perovskite/Si tandem solar cell application | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 69th | | | | 2022 |
| 2 | XPS Evaluation of ALD-TiO2 layer for perovskite/Si tandem solar cell application | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 69th | | | | 2022 |
| 3 | Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 68th | | 2279 | 2279 | 2021 |
| 4 | Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 82nd | | | | 2021 |
| 5 | HAXPES evaluation of the chemical bond state of the elements in the polarization-inverted AlScN film | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 82nd | | | | 2021 |
| 6 | Effect of Plasma Nitridation on Chemical Bonding State of 4H-SiC Surface | 応用物理学会春季学術講演会講演予稿集(CD-ROM) | 67th | | 3157 | 3157 | 2020 |
| 7 | Evaluation of chemical bonding state of AlScN using AR-XPS | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 81st | | 885 | 885 | 2020 |
| 8 | Interface Dipole Modulation in HfO <inf>2</inf> /SiO <inf>2</inf> MOS Stack Structures | Technical Digest - International Electron Devices Meeting, IEDM | 2018-December | | 7.6.1 | 7.6.4 | Jan. 16, 2019 |
| 9 | Bias-applied hard x-ray photoelectron spectroscopy study of HfO2/SiO2 interface dipole modulation | JSAP Annual Meetings Extended Abstracts | 80th | | 3026 | 3026 | 2019 |
| 10 | Angle-resolved Photoelectron Spectroscopy Study of soft-ICP etching Damage Layer on Diamond Surface | JSAP Annual Meetings Extended Abstracts | 80th | | 1266 | 1266 | 2019 |
| 11 | Angle-resolved Hard X-ray Photoelectron Spectroscopy Study of ICP etching Damage Layer on Diamond Surface | JSAP Annual Meetings Extended Abstracts | 66th | | 1460 | 1460 | 2019 |
| 12 | Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001) on-Axis, 4° Off-Axis Substrates Ⅱ | JSAP Annual Meetings Extended Abstracts | 2018.2 | | 3430 | 3430 | Sep. 5, 2018 |
| 13 | Improvement of interface properties of crystalline Lu-doped La2O3/La2O3/Ge(111) MIS structures by wet treatments | JSAP Annual Meetings Extended Abstracts | 65th | | 3082 | 3082 | 2018 |
| 14 | Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes | 17th International Workshop on Junction Technology, IWJT 2017 | | | 81 | 82 | Jun. 30, 2017 |
| 15 | XPS測定を用いた積層Mo/C電極とSiCショットキー接合界面の特性評価 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 77th | | ROMBUNNO.14p‐P9‐4 | | Sep. 1, 2016 |
| 16 | 硬X線光電子分光を用いた金属/AlGaN/GaNのバンド構造の解析 | 応用物理学会秋季学術講演会講演予稿集(CD-ROM) | 75th | | ROMBUNNO.17P-A27-5 | | Sep. 1, 2014 |
| 17 | Initial stage of oxidation on 4H-SiC using angle-resolved X-ray photoelectron spectroscopy | 電子情報通信学会技術研究報告 | 114 | 255(SDM2014 84-95) | | | 2014 |
| 18 | Detection of Oxidation-Induced Compressive Stress in Si(100) Substrate Near the SiO2/Si Interface by X-Ray Photoelectron Spectroscopy | | CD-ROM | | 111 | 112 | 2013 |
| 19 | The XPS Study on Depth Profile of N Atom in Oxynitride Film Formed on 4H-SiC by Radical Nitridation | | USB | | | | 2013 |
| 20 | Detection of oxidationinduced compressive stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution | | USB | | | | 2013 |
| 21 | Comparison of Oxide Hole/Electron Trap Densities of ~1 nm-SiO2 Films Formed on Si(100) and Si(111) Substrates | | CDROM | | 41 | 42 | 2013 |
| 22 | 角度分解X線光電子分光法によるGeにδドープしたSbの深さ方向分布 | 応用物理学会学術講演会講演予稿集(CD-ROM) | 73rd | | ROMBUNNO.13P-PA10-6 | | Aug. 27, 2012 |
| 23 | Si‐capによるHfO2/歪みGe界面のHfジャーマネイト形成の抑制 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 59th | | ROMBUNNO.15P-GP1-13 | | Feb. 29, 2012 |
| 24 | Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures | IWJT 2012 - 2012 12th International Workshop on Junction Technology | 2012-January | | 1 | 4 | Jan. 1, 2012 |
| 25 | AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC interfaces | 電子情報通信学会技術研究報告 | 112 | 263(SDM2012 89-97) | | | 2012 |
| 26 | AR-XPS Study on Chemical Bonding State of In_<0.53>Ga_<0.47>As Surface treated by Various Surface Treatments | Technical report of IEICE. SDM | 111 | 249 | 53 | 58 | Oct. 13, 2011 |
| 27 | 角度分解X線光電子分光法によるHfO2/Si/歪みGe/SiGe構造の評価 III | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 58th | | ROMBUNNO.27A-KW-4 | | Mar. 9, 2011 |
| 28 | Study of High-k/In0.53Ga0.47As Interface by HX-PES | | - | | 89 | 90 | 2011 |
| 29 | Direct contact of high-k/Si gate stack for EOT below 0.7 nm using LaCe-silicate layer with V<inf>fb</inf> controllability | Digest of Technical Papers - Symposium on VLSI Technology | | | 69 | 70 | Oct. 19, 2010 |
| 30 | 角度分解X線光電子分光法によるHfO2/Si/歪Ge/SiGe構造の評価 II | 応用物理学会学術講演会講演予稿集(CD-ROM) | 71st | | ROMBUNNO.15P-ZA-12 | | Aug. 30, 2010 |
| 31 | 角度分解X線光電子分光法によるHfO2/Si/歪Ge/SiGe構造の評価 | 応用物理学関係連合講演会講演予稿集(CD-ROM) | 57th | | ROMBUNNO.18P-P9-10 | | Mar. 3, 2010 |
| 32 | Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions | IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology | - | | 174 | 177 | 2010 |
| 33 | Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions | IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology | - | | 174 | 177 | 2010 |
| 34 | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy | 電子情報通信学会技術研究報告 | 108 | 236(SDM2008 149-168) | 69 | 74 | Oct. 2, 2008 |
| 35 | HfO2/SiO2/Si構造で観測されるHf光電子スペクトルのブロードニング | 応用物理学関係連合講演会講演予稿集 | 55th | 2 | 842 | | Mar. 27, 2008 |
| 36 | First-principles calculation of the Slater transition state for estimating optical dielectric constants of Si and Al dielectric compounds | Book of Abstracts 7th Symposium SiO₂ Advanced Dielectrics and Related Devices | | | 51 | 52 | 2008 |
| 37 | Investigation of FePt Nano-Dots Fabricated by Self-Assembled Nano-Dot Deposition Method Using X-ray Photoelectron Spectroscopy | | CDROM | | 1026 | 1027 | 2007 |
| 38 | High Resolution Hard X‐ray Photoemission Spectroscopy at SPring‐8: Basic Performance and Characterization | AIP Conference Proceedings | 879 | Pt.2 | 1597 | 1602 | 2007 |
| 39 | 直接接合HfO2/Si構造で生じる負のVfbシフト | 応用物理学会学術講演会講演予稿集 | 67th | 2 | 716 | | Aug. 29, 2006 |
| 40 | XPS studies on barrier height at Au/ultrathin SiO_2 interface | IEICE technical report | 106 | 108 | 119 | 124 | Jun. 14, 2006 |
| 41 | Electric characteristics of Si3N4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces | | J-3-4 | | 386 | 387 | 2006 |
| 42 | Thermal Stability of Lanthanum Oxide/Si(100) Interfacial Transition Layer | | CDROM | | p. 18 | | 2006 |
| 43 | X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces | ICSICT-2006 | | | 368 | 371 | 2006 |
| 44 | 28aYB-2 direct observation of the valence electronic structure at silicon-oxynitride/Si interface | Meeting Abstracts of the Physical Society of Japan | 61 | 0 | | | 2006 |
| 45 | X-Ray Photoelectron Spectroscopy Study on Dielectric Properties of AlN and Al2O3 Films | | - | | 25 | 26 | 2006 |
| 46 | Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode | | - | | 103 | 104 | 2006 |
| 47 | Depth Profile of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation | Technical report of IEICE. SDM | pp. 540-541 | 108 | 49 | 54 | 2005 |
| 48 | Angle-Resolved Photoelectron Spectroscopy Study on Gate Insulators | | Volume 2005-01 | | 19 | 32 | 2005 |
| 49 | Thermal Stability of GdOx/Si Interfacial Transition Layer | | PII-5 | | | | 2005 |
| 50 | Hard X-Ray Photoelectron Spectroscopy for HfON/SiN/Si System | | CDROM | | | | 2005 |
| 51 | Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation | Technical report of IEICE. SDM | pp. 540-541 | 108 | 49 | 54 | 2005 |
| 52 | LaOx/Si界面組成遷移層の化学結合状態の熱処理依存性 | 応用物理学会学術講演会講演予稿集 | 65th | 2 | 688 | | Sep. 2004 |
| 53 | Influence of Thermal Annealing on Chemical Structure of Lanthanum oxide/Si Interfacial Transition Layer | | P5-15, pp.540-541 | | | | 2004 |
| 54 | Angle-resolved XPS Studies on Al2O3/SiON Interface Reaction | | CDROM | | 111 | 112 | 2004 |
| 55 | Effect of Post-Deposition Annealing of Composition and Chemical Structures of La2O3 film/Si(100) Interfacial Transition Layers | | CDROM | | 113 | 114 | 2004 |
| 56 | Angle-Resolved X-ray Photoelectron Spectroscopy Studies on Compositional and Structural Transition Layers at SiO2/Si Interfaces | | CDROM | | 43 | 44 | 2004 |
| 57 | Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD | | CDROM | | 19 | 20 | 2004 |
| 58 | 13aXC-10 Improvements of energy resolution and detection efficiency in hard X-ray photoemission | Meeting Abstracts of the Physical Society of Japan | 59 | 0 | | | 2004 |
| 59 | Energy-dependent x-ray photoelectron spectroscopy and Hard X-ray photoemission spectroscopy | Journal of The Surface Science Society of Japan | Vol. 24 | No. 11 | p.715 | | 2003 |
| 60 | Chemical Structures of HfO2/Si Interfacial Transition Layer | | D-9-2 | | 818 | 819 | 2003 |
| 61 | Compositional depth profiling of ultrathin oxynitride/Si interface using XPS | APPLIED SURFACE SCIENCE | 190 | 1-4 | 39 | 42 | May. 2002 |
| 62 | Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy | JOURNAL OF NON-CRYSTALLINE SOLIDS | 303 | 1 | 83 | 87 | May. 2002 |
| 63 | Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy | JOURNAL OF NON-CRYSTALLINE SOLIDS | 303 | 1 | 83 | 87 | May. 2002 |
| 64 | Compositional depth profiling of ultrathin oxynitride/Si interface using XPS | APPLIED SURFACE SCIENCE | 190 | 1-4 | 39 | 42 | May. 2002 |
| 65 | Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer | | C-8-2 | | 758 | 759 | 2002 |
| 66 | Influence of interface structure on oxidation rate of silicon | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 40 | 1AB | L68 | L70 | Jan. 2001 |
| 67 | Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy | J. Vac. Soc. Jpn. | Vol.44 | - | 715 | 719 | 2001 |
| 68 | Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface | | B-6-2 | | 224 | 225 | 2001 |
| 69 | Surface and interface morphologies of ultrathin oxynitrides films formed on Si(100) | Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 | 7.13 | | 152 | 155 | 2001 |
| 70 | Detection of interfaces states correlated with layer-by-layer oxidation on Si(100) | Materials Research Society Symposium - Proceedings | 592 | | 33 | 37 | 2000 |
| 71 | Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100) | Applied Surface Science | 159 | | 67 | 71 | 2000 |
| 72 | Chemical structures of oxynitride/Si(100) interface | PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4 | 2000 | 2 | 181 | 186 | 2000 |
| 73 | Elastic scattering of Si 2p photoelectrons in silicon oxide | APPLIED SURFACE SCIENCE | 144-45 | | 297 | 300 | Apr. 1999 |
| 74 | Elastic scattering of Si 2p photoelectrons in silicon oxide | APPLIED SURFACE SCIENCE | 144-45 | | 297 | 300 | Apr. 1999 |
| 75 | Detection of Inteitace States Correlated with SiO2/Si(111)Interface Structures | | 042 | | p. 129 | | 1999 |
| 76 | Surface morphology of ultrathin oxide formed on Si(100) | ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 567 | | 163 | 167 | 1999 |
| 77 | Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100) | | A2-6 | | | | 1999 |
| 78 | Accurate Thickness Determination of Ultrathin Silicon Oxide Film by XPS | | LP-2 | | | | 1999 |
| 79 | Elastic and Inelastic Scattering of Si 2p photoelectrons in Silicon Oxides | | 23a-6-4 | | 39 | 40 | 1999 |
| 80 | Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100) | | p.316 AM T1.7 | | | | 1999 |
| 81 | Atomic-Scale Surface Morphology of Ultrathin Thermal Oxide Formed on Si(100) Surface | | WE.B 14.30 O | | | | 1999 |
| 82 | Atomic Structure of SiO2 at SiO2/Si Interface | | 041 | | p. 128 | | 1999 |
| 83 | Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface | | pp. 341-343 | | | | 1996 |
| 84 | Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Si(111)1×1 Surfaces | | F-6 | | 165 | 166 | 1995 |
| 85 | Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Si Surfaces | | pp. 497-499 | | | | 1995 |
| 86 | Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surfaces | | - | | 385 | 387 | 1994 |
| 87 | Initial stage of oxidation of hydrogen-terminated silicon surfaces | Technical report of IEICE. SDM | - | 185 | 385 | 387 | 1994 |
| 88 | INITIAL-STAGE OF SIO2/SI INTERFACE FORMATION ON HYDROGEN-TERMINATED SILICON SURFACES | SURFACE CHEMICAL CLEANING AND PASSIVATION FOR SEMICONDUCTOR PROCESSING | 315 | | 387 | 392 | 1993 |
| 89 | Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface | | - | | 603 | 605 | 1993 |
| 90 | Initial Stage of Oxidation of Hydrogen-Terminated Si (100) and Si (111) | | - | | 89 | 90 | 1992 |
| 91 | Preparation of YbBa2Cu3O7-x Films on Si (100) Substrates Using SrTiO3 Buffer Layers | | - | | 505 | 507 | 1991 |
| 92 | PREPARATION OF AS-DEPOSITED YB-BA-CU-O SUPERCONDUCTING FILMS BY DC ARC-DISCHARGE EVAPORATION METHOD | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 29 | 12 | L2466 | L2468 | Dec. 1990 |
| 93 | As-Deposited Yb-Ba-Cu-O Superconducting Films by DC Arc Discharge Evaporation Method | | - | | 585 | 588 | 1990 |
| Conference Activities & Talks |
| No. | Ｔitle | Conference | Publication date | Promoter | Venue |
| 1 | Elucidation of the initial oxidation process of 4H-SiC by AR-XPS study | The 61th JSAP Spring Meeting, 2013 | 2014 | | |
| 2 | The Effect of (NH4)2S Surface Treatment on La2O3/In0.53Ga0.47As Using ALD | 19th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2014 | | |
| 3 | HXPES Study of Fe3 Si/Ge Hetero Structure | 19th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2014 | | |
| 4 | The XPS Study on Depth Profile of N Atom in Oxynitride Film Formed on 4H-SiC by Radical Nitridation | 19th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2014 | | |
| 5 | Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution | 19th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2014 | | |
| 6 | Study of SiO2/Si and SiO2/SiC Interface Structure by Synchrotron Radiation excited Photoelectron Spectroscopy | 145th Committee on Processing and Characterization of Crystals | 2013 | | |
| 7 | HEPES study of Fe3Si/Ge heterostructure | The 60th JSAP Spring Meeting, 2013 | 2013 | | |
| 8 | Initial Stage of Oxidation on In0.53Ga0.47As in Different Oxidative Atmosphere Studied by AR-XPS | The 60th JSAP Spring Meeting, 2013 | 2013 | | |
| 9 | HEPES Study of Fe3 Si/Ge Hetero Structure | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 10 | Evaluation of electrical activation of impurities segregated at Ni-silicide/Si Schottky junction interface | The 60th JSAP Spring Meeting, 2013 | 2013 | | |
| 11 | Depth Profile of δ Doped Sb in Ge Using Angle Resolved X-ray Photoelectron Spectroscopy | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 12 | XPS Time-Dependent Measurement of SiO2/Si Interfaces | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 13 | Elucidation of the Relationship between Local Dielectric Response and Breakdown Electric-Field Strength of Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 14 | The Effect of TiN-cap on Thermal Stability of W/high-k Dielectrics/In0.53Ga0.47As | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 15 | Variations in Static Dielectric Constants of SiO2 Gate Insulator Films : Accuracy of an Estimation Technique and Influence on Output Currents of MOSFETs | 18th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2013 | | |
| 16 | Chemical Bonding States Analysis at ZnO/CdS Interfaces by XPS and XAFS | The 59th Spring Meeting, 2012 | 2012 | | |
| 17 | Initial Stage of Oxidation on In0.53Ga0.47As Surface Studied by AR-XPS | The 59th Spring Meeting, 2012 | 2012 | | |
| 18 | Valence number of Ce and Ce silicate at cerium oxide/Si(100) interface | The 59th Spring Meeting, 2012 | 2012 | | |
| 19 | Annealing temperature dependence of chemical bonding states of Boron in Si | The 59th Spring Meeting, 2012 | 2012 | | |
| 20 | Angle-Resolved XPS Studies on Transition Layers at SiO2/SiC Interfaces | The 59th Spring Meeting, 2012 | 2012 | | |
| 21 | The suppression of hafnium germanate formation by Si-cap layer at HfO2/strained-Ge interface | The 59th Spring Meeting, 2012 | 2012 | | |
| 22 | AR-XPS Study on Chemical Bounding State of In0.53Ga0.47 Surface treated by Various Surface Treatments | 17th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2012 | | |
| 23 | Estimation of Breakdown Electric-Field Strength of Defective Silicon Dioxide Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique | 17th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2012 | | |
| 24 | Estimation Method for Static Dielectric Constants of Polymorphic Forms of Silicon Dioxide with a First-principles Calculation System | 17th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2012 | | |
| 25 | Study on concentration depth profiles of B clusters in ultra-shallow heavily doped region in Si by soft X-ray photoelectron spectroscopy | The 59th Spring Meeting, 2012 | 2012 | | |
| 26 | Angle-Resolved XPS Studies on Transition Layers at SiO2/SiC Interfaces | 222nd Meeting of The Electrochemical Society ( PRiME 2012), Honolulu, HI, USA | 2012 | | |
| 27 | AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces | The Institute of Electronics, Information and Communication Engineers | 2012 | | |
| 28 | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions | The Institute of Electronics, Information and Communication Engineers | 2012 | | |
| 29 | Dependence of carrier traps at SiO2/Si interfaces on Si surface orientation studied by XPS time-dependent measurement | Silicon Technology | 2011 | | |
| 30 | Effect of Various Surface Treatments on Chemical Bonding State at La2O3/In0.53Ga0.47As and on In0.53Ga0.47As Surface | 220th Meeting of The Electrochemical Society, Boston, MA, USA | 2011 | | |
| 31 | (Invited) XPS Study on Chemical Bonding States of high-kappa/high-µ Gate Stacks for Advanced CMOS | 220th Meeting of The Electrochemical Society, Boston, MA, USA | 2011 | | |
| 32 | AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments | The Institute of Electronics, Information and Communication Engineers | 2011 | | |
| 33 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy | The Institute of Electronics, Information and Communication Engineers | 2011 | | |
| 34 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy | 16th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2011 | | |
| 35 | The Estimation of Local Breakdown Voltage of Si•Al Compounds Using First-principles Molecular Orbitals Calculation | 16th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2011 | | |
| 36 | Estimation Method for Permittivity due to Electronic and Lattice Polarization by using First-principles Calculation | 16th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterization | 2011 | | |
| 37 | Study on Chemical Bonding States at high-k/Si and high-k/Ge Interfaces by XPS | | 2010 | | |
| 38 | Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions | | 2010 | | |
| 39 | A study of the orientation dependence of dielectric constant at SiO2/Si interfaces | The 57th Spring Meeting, 2010 | 2010 | | |
| 40 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectro | The 57th Spring Meeting, 2010 | 2010 | | |
| 41 | Development of Hard X-ray Photoelectron Spectroscopy System and Applications to Semiconductors | The 57th Spring Meeting, 2010 | 2010 | | |
| 42 | Influence of Post Deposition Annealing on Compositional Depth Profile and Chemical Structures of SrO/La2O3/CeO2/Si(100) | 15th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterizations - | 2010 | | |
| 43 | Dielectric Constant Estimation for SiO2/Si Interface Based on the First-principles Calculation | 15th Workshop on Gate Stacks - Physics in Materials, Fablication Processes and Characterizations - | 2010 | | |
| 44 | Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy | 218th Meeting of The Electrochemical Society, Las Vegas, NV, USA | 2010 | | |
| 45 | Study on chemical bonding states of As and P in Si detected by X-ray photoelectron spectroscopy | The 57th Spring Meeting, 2010 | 2010 | | |
| 46 | XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS | 217th Meeting of The Electrochemical Society, Vancouver, Canada | 2010 | | |
| 47 | Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure | 216th Meeting of The Electrochemical Society, Vienna, Austria | 2009 | | |
| 48 | Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer | 214th Meeting of The Electrochemical Society, Honolulu, Hawaii, USA | 2008 | | |
| 49 | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy | The Institute of Electronics, Information and Communication Engineers | 2008 | | |
| 50 | Angle-Resolved Photoelectron Spectroscopy Study on Ultrathin Gate Dielectrics | 212th Meeting of The Electrochemical Society, Washington, USA, | 2007 | | |
| 51 | Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals | The Institute of Electronics, Information and Communication Engineers | 2007 | | |
| 52 | XPS studies on barrier height at Au/ultra-thin SiO2 interface | The Institute of Electronics, Information and Communication Engineers | 2006 | | |
| 53 | Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure | Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment, 210th Meeting, The Electrochemical Society, Cancun, Mexico | 2006 | | |
| 54 | The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density | The Institute of Electronics, Information and Communication Engineers | 2006 | | |
| 55 | HR-XPS Study on Si3N4/Si Interface Structures and its Correlation with Hysteresis in C-V Curves | 208th Meeting of The Electrochemical Society, The Westin Bonaventure Hotel and Suites, Los Angeles, CA, USA, 2005. | 2005 | | |
| 56 | Thermal Stability of Lanthanum Oxide/Si(100) Interfacial Transition Layer | 208th Meeting of The Electrochemical Society, The Westin Bonaventure Hotel and Suites, Los Angeles, CA, USA, 2005 | 2005 | | |
| 57 | Determination of electron escape depth in ultrathin silicon oxide formed on Si(100) | Abstract of the 15th Symposium of the Materials Research Society of Japan | 2004 | | |
| 58 | Study of HfO2 Gate Dielectrics by Combination of High Resolution Synchrotron Radiation Hard X-Ray ESCA and Meadium Energy Rutherford Backscattering | Abstract of 9th Intern. Conf.on Formation of Semiconductor Interfaces, Madrid, Spain | 2003 | | |
| 59 | Oxidation of ultrathin strained Si layer formed on Si0.7Ge0.3 layer | Abstract of 7th Int Conf.on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan | 2003 | | |
| 60 | Oxidation Process Dependence of SiO2/Si Interface Structure observed by Synchrotron Radiation High Energy Soft X-ray Photoemission Spectroscopy | Abstract of 9th Intern. Conf.on Formation of Semiconductor Interfaces, Madrid, Spain | 2003 | | |
| 61 | Atomic-scale Depth Profile of Composition, Chemical Structure and Electronic Band Structure of La2O3/Si(100) System | Abstract of 9th Intern. Conf.on Formation of Semiconductor Interfaces, Madrid, Spain | 2003 | | |
| 62 | Depth Profiling of Oxynitride/Si(100) Interface using Synchrotron Radiation | 4th Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan | 2002 | | |
| 63 | Chemical and Electronic Structures of Lu2O3/Si Interfacial Transition Layer | 4th Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan | 2002 | | |
| 64 | Study High Resolution - High Energy X-ray Photoemission Spectroscopy by Synchrotron Radiation for Si- Insulator Interface Study | 4th Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan | 2002 | | |
| 65 | Atomic-Scale Depth Profiling of Oxynitride/Si(100) Interface | International Semiconductor Technology Conference ISTC 2002 Meeting, Tokyo, Japan | 2002 | | |
| 66 | Characterization of ALCVD-Al2O3 and ZrO2 Layer using X-Ray Photoelectron Spectroscopy | European Materials Research Society Spring Meeting, Strasbourg (France) | 2001 | | |
| 67 | Detection of Interface States Correlated with Interface Structure | 8th Int Conf.on Formation of Semiconductor Interfaces | 2001 | | |
| 68 | Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si Interface | 4th Intern. Symp. on UCPSS '98, held in Ostend, Belgium | 1998 | | |
| 69 | Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer | Reported at 14th Int. Vacuum Congress and 10th Int. Conf. on Solid Surfaces, Birmingham, UK | 1998 | | |
| 70 | Valence Band Discontinuity at and near the SiO2/Si(111) Interface | Abstr. MRS Spring Meeting, San Francisco, California, USA. | 1997 | | |
| 71 | Initial stage of SiO2 valence band formation | 2nd Intern. Conf. Control of Semiconductor Interfaces, Karuizawa | 1996 | | |
