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MITANI Yuichiro

Profile Research field Research achievement Educational achievement Social contribution achievement

　

Published Papers  
No.ＴitleJournalVolNoStart PageEnd PagePublication dateDOIReferee
1Resistive switching memory using buckybowl sumanene-inserted bilayer graphene Japanese Journal of Applied Physics 63 4 04SP35 04SP35 Apr. 1, 2024 https://doi.org/10.35848/1347-4065/ad2fe21Refereed 
2Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES Japanese Journal of Applied Physics 63 4 04SP66 04SP66 Apr. 1, 2024 https://doi.org/10.35848/1347-4065/ad39251Refereed 
3Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films Japanese Journal of Applied Physics 63 4 04SP47 04SP47 Apr. 1, 2024 https://doi.org/10.35848/1347-4065/ad355f1Refereed 
4Study on the relation between interface trap creation and MOSFET degradation under channel hot carrier stressing at cryogenic temperatures Japanese Journal of Applied Physics 63 4 04SP22 04SP22 Mar. 22, 2024 https://doi.org/10.35848/1347-4065/ad2bbb1Refereed 
5Stacked structure dependence on resistive switching characteristics in sumanene molecular memory Japanese Journal of Applied Physics 63 4 04SP05 04SP05 Mar. 18, 2024 https://doi.org/10.35848/1347-4065/ad27471Refereed 
6Study on Interface Trap and Fixed Charge Generation under Channel Hot Carrier Stressing at Low Temperature Using Device Simulation 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Nov. 16, 2023 https://doi.org/10.1109/imfedk60983.2023.103663411Refereed 
7Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties Japanese Journal of Applied Physics 62 SG SG1035 SG1035 Mar. 23, 2023 https://doi.org/10.35848/1347-4065/acbeb91Refereed 
8Re-consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Apr. 8, 2021 https://doi.org/10.1109/edtm50988.2021.94210061Refereed 
9Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation 2020 IEEE International Reliability Physics Symposium (IRPS) Apr. 2020 https://doi.org/10.1109/irps45951.2020.91282241Refereed 
10Dramatic Improvement of Vfb Shift and Gmmax with Ultra-thin and Ultra-low-leakage SiN-based SiON Gate Dielectrics ECS Transactions 6 3 313 327 Dec. 19, 2019 https://doi.org/10.1149/1.27288041Refereed 
11Impact of Deuterium and Fluorine Incorporation on Weibull Distribution of Dielectric Breakdown in Gate Dielectrics ECS Transactions 19 2 227 242 Dec. 18, 2019 https://doi.org/10.1149/1.31220941Refereed 
12(Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics ECS Transactions 33 3 507 519 Dec. 17, 2019 https://doi.org/10.1149/1.34816401Refereed 
13Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory Technical Digest - International Electron Devices Meeting, IEDM 2019-December Dec. 2019 https://doi.org/10.1109/IEDM19573.2019.89935561Refereed 
14Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB IEEE Transactions on Electron Devices 66 5 2165 2171 May. 2019 https://doi.org/10.1109/ted.2019.29049841Refereed 
15Evaluation of electron traps in SiNx by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS Japanese Journal of Applied Physics 58 SB SBBK02 SBBK02 Apr. 1, 2019 https://doi.org/10.7567/1347-4065/aafe641Refereed 
16Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 169 171 Mar. 2019 https://doi.org/10.1109/EDTM.2019.87310251Refereed 
17Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing Japanese Journal of Applied Physics 57 6 06KB04 06KB04 Jun. 1, 2018 https://doi.org/10.7567/JJAP.57.06KB041Refereed 
18Study on mechanism of thermal curing in ultra-thin gate dielectrics IEEE International Reliability Physics Symposium Proceedings 2018-March 3A.41 3A.48 May. 25, 2018 https://doi.org/10.1109/IRPS.2018.83535541Refereed 
19Experimental Evidence of Trap Level Modulation in SiN Thin Film by Hydrogen Anneal-ing 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY 128 129 Nov. 2017  Refereed 
20Physically unclonable function using initial waveform of ring oscillators on 65nm CMOS technology Japanese Journal of Applied Physics 56 4 04CF13 04CF13 Apr. 1, 2017 https://doi.org/10.7567/JJAP.56.04CF131Refereed 
21Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation IEEE Transactions on Circuits and Systems II: Express Briefs 64 4 462 466 Apr. 1, 2017 https://doi.org/10.1109/TCSII.2016.25856751Refereed 
22Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface Microelectronics Reliability 70 12 21 Mar. 1, 2017 https://doi.org/10.1016/j.microrel.2017.01.0111Refereed 
23Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system IEEE International Reliability Physics Symposium Proceedings 2016-September 7B21 7B27 Sep. 22, 2016 https://doi.org/10.1109/IRPS.2016.75745781Refereed 
24Impact of trap creation at SiO<inf>2</inf>/Poly-Si interface on ultra-thin SiO<inf>2</inf> reliability IEEE International Reliability Physics Symposium Proceedings 2016-September DI21 DI25 Sep. 22, 2016 https://doi.org/10.1109/IRPS.2016.75745951Refereed 
25Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations Digest of Technical Papers - Symposium on VLSI Technology 2016-September Sep. 21, 2016 https://doi.org/10.1109/VLSIT.2016.75733731Refereed 
26Physically Unclonable Function using Initial Waveform of Ring Oscillators on 65nm CMOS Technology Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials abs/1703.00073 417 418 Sep. 2016  Refereed 
27Further understandings on impacts of la incorporation in HfSiON/TiN nFETs through comprehensive random telegraph noise characterizations IEEE International Integrated Reliability Workshop Final Report 2016-March 29 33 Mar. 18, 2016 https://doi.org/10.1109/IIRW.2015.74370611Refereed 
28Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities Digest of Technical Papers - Symposium on VLSI Technology 2015-August T40 T41 Aug. 25, 2015 https://doi.org/10.1109/VLSIT.2015.72236951Refereed 
29Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing 2015 International Conference on IC Design and Technology, ICICDT 2015 Jul. 23, 2015 https://doi.org/10.1109/ICICDT.2015.71658921Refereed 
30Unified transient and frequency domain noise simulation for random telegraph noise and flicker noise using a physics-based model IEEE Transactions on Electron Devices 61 12 4197 4203 Dec. 1, 2014 https://doi.org/10.1109/TED.2014.23650151Refereed 
31Extracting physically unclonable function from spin transfer switching characteristics in magnetic tunnel junctions IEEE Transactions on Magnetics 50 11 1 4 Nov. 1, 2014 https://doi.org/10.1109/TMAG.2014.23256461Refereed 
32Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies Digest of Technical Papers - Symposium on VLSI Technology Sep. 8, 2014 https://doi.org/10.1109/VLSIT.2014.68944181Refereed 
33Experimental Study on Random Telegraph Signal Noise in (110) pMOSFETS with 1nm EOT Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials 870 871 Sep. 2014  Refereed 
34Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing Microelectronics Reliability 53 12 1868 1874 Dec. 2013 https://doi.org/10.1016/j.microrel.2013.05.0101Refereed 
35Understandings on Surface Orientation Impacts on Random Telegraph Signal Noise Related Carriers Trapping Time Constants and Current Fluctuations Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials 724 725 Sep. 2013  Refereed 
36Experimental proof of direct correlation between hydrogen migrated to SiO2/Si interface and MOSFET characteristics using high energy 15N2+ ion beam Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials 730 731 Sep. 2013  Refereed 
37Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits ICICDT 2013 - International Conference on IC Design and Technology, Proceedings 195 198 2013 https://doi.org/10.1109/ICICDT.2013.65633351Refereed 
38Experimental study of channel doping concentration impacts on random telegraph signal noise and successful noise suppression by strain induced mobility enhancement Digest of Technical Papers - Symposium on VLSI Technology 2013  Refereed 
39The electronic structure of an S-pair in barrier-less metal/silicon junctions AIP Conference Proceedings 1566 391 392 2013 https://doi.org/10.1063/1.48484501Refereed 
40Comprehensive Understandings on Reliability Modulations in Compressive Stressed (100)- and (110)-Orientated Silicon CMOSFETs Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials 825 826 Sep. 2012  Refereed 
41Characteristics of defect generation and breakdown in SiO 2 for polycrystalline silicon channel field-effect transistor Japanese Journal of Applied Physics 51 4 04DA02 04DA02 Apr. 2012 https://doi.org/10.1143/JJAP.51.04DA021Refereed 
42Effects of electron current and hole current on dielectric breakdown in HfSiON gate stacks Japanese Journal of Applied Physics 51 4 041105 041105 Apr. 2012 https://doi.org/10.1143/JJAP.51.0411051Refereed 
43Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications Applied Physics Letters 100 7 072902 072902 Feb. 13, 2012 https://doi.org/10.1063/1.36871891Refereed 
44Direct observation of boron dopant fluctuation by site-specific scanning spreading resistance microscopy IEEE International Reliability Physics Symposium Proceedings 2012 https://doi.org/10.1109/IRPS.2012.62417851Refereed 
45Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs Digest of Technical Papers - Symposium on VLSI Technology 141 142 2012 https://doi.org/10.1109/VLSIT.2012.62425011Refereed 
46Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology 2012 https://doi.org/10.1109/ICICDT.2012.62328421Refereed 
47Erratum: Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen (Microelectronic Engineering (2011) 88:7 (1457-1460)) Microelectronic Engineering 88 11 3376 Nov. 2011 https://doi.org/10.1016/j.mee.2011.11.0021Refereed 
48Influence of channel area scaling on Weibull distribution of TDDB for poly-Si channel FET Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 897 898 Sep. 2011  Refereed 
49Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen Microelectronic Engineering 88 7 1457 1460 Jul. 2011 https://doi.org/10.1016/j.mee.2011.03.0461Refereed 
50Double junction tunnel using si nanocrystalline layer for nonvolatile memory devices Japanese Journal of Applied Physics 50 4 041302 041302 Apr. 2011 https://doi.org/10.1143/JJAP.50.0413021Refereed 
51Degradation of high-k/interface layer structures by H atoms and interface engineering with O atom manipulation AIP Conference Proceedings 1399 961 962 2011 https://doi.org/10.1063/1.36666971Refereed 
52Experimental study on origin of V<inf>TH</inf> variability under NBT stress IEEE International Reliability Physics Symposium Proceedings 2011 https://doi.org/10.1109/IRPS.2011.57845931Refereed 
53Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 2011 https://doi.org/10.1109/ICICDT.2011.57832151Refereed 
54Method of decoupling the bias temperature instability component from hot carrier degradation in ultrathin high-κ metal-oxide-semiconductor field-effect transistors Japanese Journal of Applied Physics 49 7 0711021 0711026 Jul. 2010 https://doi.org/10.1143/JJAP.49.0711021Refereed 
55Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film IEEE International Reliability Physics Symposium Proceedings 424 429 2010 https://doi.org/10.1109/IRPS.2010.54887931Refereed 
56Re-consideration of influence of silicon wafer surface orientation on gate oxide reliability from TDDB statistics point of view IEEE International Reliability Physics Symposium Proceedings 299 305 2010 https://doi.org/10.1109/IRPS.2010.54888121Refereed 
57A study of dielectric breakdown mechanisms in MG/HK MISFETs: From the viewpoint of TDDB statistics ECS Transactions 33 3 507 519 2010 https://doi.org/10.1149/1.34816401Refereed 
58Programming Current Enhancement by Ge Incorporation into Tunnel Oxide Film Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials 438 439 Sep. 2009  Refereed 
59Decoupling method of BTI component from hot carrier degradation in ultra-thin HfSiON MOSFETs Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials 1022 1023 Sep. 2009  Refereed 
60Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4 Microelectronic Engineering 86 7-9 1901 1904 Jul. 2009 https://doi.org/10.1016/j.mee.2009.03.0391Refereed 
61Influence of traps and carriers on reliability in HfSiON/SiO2 stacks IEEE Transactions on Device and Materials Reliability 9 2 163 170 Jun. 2009 https://doi.org/10.1109/TDMR.2009.20139391Refereed 
62Impact of deuterium and fluorine incorporation on weibull distribution of dielectric breakdown in gate dielectrics ECS Transactions 19 2 227 242 2009 https://doi.org/10.1149/1.31220941Refereed 
63Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs IEEE International Reliability Physics Symposium Proceedings 367 372 2009 https://doi.org/10.1109/IRPS.2009.51732801Refereed 
64Impact of metal gate electrode on weibull distribution of TDDB in HfSiON gate dielectrics IEEE International Reliability Physics Symposium Proceedings 355 361 2009 https://doi.org/10.1109/IRPS.2009.51732781Refereed 
65Reconsideration of hydrogen release at ultra thin gate oxide interface Japanese Journal of Applied Physics 47 3 1456 1460 Mar. 14, 2008 https://doi.org/10.1143/JJAP.47.14561Refereed 
66Influence of nitrogen on negative bias temperature instability in ultrathin SiON IEEE Transactions on Device and Materials Reliability 8 1 613 13 Mar. 2008 https://doi.org/10.1109/TDMR.2008.9173141Refereed 
6710 nm bulk-planar sONOS-type memory with double tunnel junction and sub-10 nm scaling utilizing source to drain Direct tunnel sub-threshold Technical Digest - International Electron Devices Meeting, IEDM 2008 https://doi.org/10.1109/IEDM.2008.47968281Refereed 
68Influence of pre-existing and generated traps on reliability in HfSiON/SIO<inf>2</inf> stacks with fluorine incorporation IEEE International Reliability Physics Symposium Proceedings 659 660 2008 https://doi.org/10.1109/RELPHY.2008.45589751Refereed 
69Effect of oxidation pressure on Pb center generation and H termination for thin thick-ness SiO2 under 2.5 nm 38th IEEE Semiconductor Interface Specialists Conference (SISC) 3 3 Dec. 2007  Refereed 
70Mechanism for SILC Trap Creation Due to Released Bi-Hydrogen from Gate Oxide In-terface 38th IEEE Semiconductor Interface Specialists Conference (SISC) 7 7 Dec. 2007  Refereed 
7115 nm planar bulk SONOS-type memory with double junction tunnel layers using sub-threshold slope control Technical Digest - International Electron Devices Meeting, IEDM 75 78 2007 https://doi.org/10.1109/IEDM.2007.44188671Refereed 
72Reconsideration of hydrogen-related degradation mechanism in gate oxide Annual Proceedings - Reliability Physics (Symposium) 226 231 2007 https://doi.org/10.1109/RELPHY.2007.3698961Refereed 
73Dramatic improvement of vfb shift and Gm max with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics ECS Transactions 6 3 313 327 2007 https://doi.org/10.1149/1.27288041Refereed 
74Experimental Evidence of Nit-related and -unrelated Mechanisms for NBTI with Ultra-thin SiON Gate Dielectric International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF) 143 144 Nov. 2006  Refereed 
75Visualization of progressive breakdown evolution in gate dielectric by conductive atomic force microscopy IEEE Transactions on Device and Materials Reliability 6 2 277 282 Jun. 2006 https://doi.org/10.1109/TDMR.2006.8765791Refereed 
76Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative- Bias Temperature Instability in HfSiON/SiO2 Gate Stack Extended Abstracts of the 2006 International Conference on Solid State Devices and Ma-terials 2006 1120 1121 May. 2006  Refereed 
77Re-examination of deuterium effect on negative bias temperature instability in ultra-thin gate oxides 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 2006  Refereed 
78Dielectric properties of noncrystalline HfSiON Physical Review B - Condensed Matter and Materials Physics 73 12 2006 https://doi.org/10.1103/PhysRevB.73.1251231Refereed 
79A new insight into the breakdown mechanism in ultrathin gate oxides by conductive atomic force microscopy IEEE International Reliability Physics Symposium Proceedings 585 589 2006 https://doi.org/10.1109/RELPHY.2006.2512821Refereed 
80Breakdown voltage prediction of ultra-thin gate insulator in electrostatic discharge (ESD) based on anode hole injection model IEEE International Reliability Physics Symposium Proceedings 623 624 2006 https://doi.org/10.1109/RELPHY.2006.2512931Refereed 
81Investigation of nitrogen-originated NBTI mechanism in SiOn with high-nitrogen concentration IEEE International Reliability Physics Symposium Proceedings 454 460 2006 https://doi.org/10.1109/RELPHY.2006.2512611Refereed 
8225 nm planar bulk SONOS-type memory with double tunnel junction Technical Digest - International Electron Devices Meeting, IEDM 2006 https://doi.org/10.1109/IEDM.2006.3469451Refereed 
83Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy Applied Physics Letters 88 3 1 3 2006 https://doi.org/10.1063/1.21666791Refereed 
84Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials 20 21 Sep. 2005  Refereed 
85Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials 240 241 Sep. 2005  Refereed 
86Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials 18 19 May. 2005  Refereed 
87Negative bias temperature instability in ultra-thin SiON Proceedings - Electrochemical Society PV 2005-01 340 352 2005  Refereed 
88Direct observation of trap behaviors during degradation and breakdown evolution in highly stressed SiO<inf>2</inf> films by conductive atomic force microscopy IEEE International Reliability Physics Symposium Proceedings 600 601 2005  Refereed 
89Thermochemical understanding of dielectric breakdown in HfSiON with current acceleration IEEE International Reliability Physics Symposium Proceedings 67 74 2005  Refereed 
90Influence of direct-tunneling gate current on negative bias temperature instability in ultra-thin gate oxides 2005 International Conference on Integrated Circuit Design and Technology, ICICDT 143 146 2005 https://doi.org/10.1109/icicdt.2005.15026131Refereed 
91Dramatic improvement of v<inf>fb</inf>, shift and G<inf>m</inf>max with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics Technical Digest - International Electron Devices Meeting, IEDM 2005 828 831 2005  Refereed 
9235 nm floating gate planar MOSFET memory using double junction tunneling Technical Digest - International Electron Devices Meeting, IEDM 2005 853 856 2005  Refereed 
93Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials 212 213 Sep. 2004  Refereed 
94Time evolution of V<inf>TH</inf> distribution under BT stress in ultra-thin gate oxides 2004 International Conference on Integrated Circuit Design and Technology, ICICDT 341 344 2004  Refereed 
95Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress Technical Digest - International Electron Devices Meeting, IEDM 117 120 2004  Refereed 
96Impact of stoichiometry control in double junction memory on future scaling Technical Digest - International Electron Devices Meeting, IEDM 897 900 2004  Refereed 
97Improvement of Charge-to-Breakdown Distribution by Fluorine Incorporation into Thin Gate Oxides IEEE Transactions on Electron Devices 50 11 2221 2226 Nov. 2003 https://doi.org/10.1109/TED.2003.8181521Refereed 
98Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2by SiD4Poly-Si Gate Electrode Japanese Journal of Applied Physics 42 Part 1, No. 9A 5426 5429 Sep. 15, 2003 https://doi.org/10.1143/jjap.42.54261Refereed 
99Ultra-thin (EOT < 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials 52 53 Sep. 2003  Refereed 
100Enhancement of VTH Degradation under NBT Stress due to Hole Capturing Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials 16 17 Sep. 2003  Refereed 
101Effect of Hf-N Bond on Properties of Thermally Stable Amorphous HfSiON and Applicability of this Material to Sub-50nm Technology Node LSIs Technical Digest - International Electron Devices Meeting 107 110 2003  Refereed 
102Suppression of stress-induced leakage current after Fowler-Nordheim stressing by deuterium pyrogenic oxidation and deuterated poly-si deposition IEEE Transactions on Electron Devices 49 7 1192 1197 Jul. 2002 https://doi.org/10.1109/TED.2002.10132751Refereed 
103Study of the SiO<inf>2</inf>/Si interface using spectroscopic ellipsometry and x-ray reflectometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 2 604 607 Mar. 2002 https://doi.org/10.1116/1.14589571Refereed 
104NBTI mechanism in ultra-thin gate dielectric - Nitrogen-originated mechanism in SiON Technical Digest - International Electron Devices Meeting 509 512 2002  Refereed 
105Highly reliable MONOS devices with optimized silicon nitride film having deuterium terminated charge traps Technical Digest - International Electron Devices Meeting 237 240 2002  Refereed 
106Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs IEEE Electron Device Letters 22 1 32 34 Jan. 2001 https://doi.org/10.1109/55.8924351Refereed 
107Experimental evidence of hydrogen-related SILC generation in thin gate oxide Technical Digest-International Electron Devices Meeting 129 132 2001 https://doi.org/10.1109/IEDM.2001.9794491Refereed 
108A Study of the Effect of Deuterium on Stress-Induced Leakage Current Japanese Journal of Applied Physics 39 Part 2, No. 6B L564 L566 Jun. 15, 2000 https://doi.org/10.1143/jjap.39.l5641Refereed 
109Oxide-Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide Japanese Journal of Applied Physics 39 Part 1, No. 4B 2147 2150 Apr. 30, 2000 https://doi.org/10.1143/jjap.39.21471Refereed 
110Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition Technical Digest - International Electron Devices Meeting 343 346 2000  Refereed 
111Reexamination of fluorine incorporation into SiO<inf>2</inf> - significant improvement of charge-to-breakdown distribution tail Annual Proceedings - Reliability Physics (Symposium) 93 98 1999  Refereed 
112Dit-Distribution Difference Between Pre- and Post-FN Electron Injection into Thin Gate Oxide 29th IEEE Semiconductor Interface Specialists Conference (SISC) II.7 II.7 Dec. 1998  Refereed 
113Precipitation of Boron in Highly Boron-Doped Silicon Japanese Journal of Applied Physics 37 Part 1, No. 3B 1171 1173 Mar. 30, 1998 https://doi.org/10.1143/jjap.37.11711Refereed 
114O+ 3 cluster primary ion bombardment for secondary ion mass spectrometry Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 124 1 91 94 1997 https://doi.org/10.1016/S0168-583X(97)00075-X1Refereed 
115Gate electrode effects on dielectric breakdown of SiO<inf>2</inf> Materials Research Society Symposium - Proceedings 446 3 13 1997  Refereed 
116Buried source and drain (BSD) structure for ultra-shallow junction using selective deposition of highly doped amorphous silicon Digest of Technical Papers - Symposium on VLSI Technology 176 177 1996  Refereed 
117New dual gate doping process using in-situ boron doped-Si for deep sub-μm CMOS device Technical Digest - International Electron Devices Meeting 831 834 1993  Refereed 
118Relationship between Magnetoresistance and Lattice Uncertainty at the Interface in Sputtered Fe/Cr Multilayer Films Journal of the Physical Society of Japan 61 4 1169 1172 Apr. 15, 1992 https://doi.org/10.1143/jpsj.61.11691Refereed 
119Advanced experimental study on giant magnetoresistance of Fe/Cr superlattices by rf-sputtering Journal of Magnetism and Magnetic Materials 104-107 3 1747 1748 Feb. 2, 1992 https://doi.org/10.1016/0304-8853(92)91531-W1Refereed 

　

MISC  
No.ＴitleJournalVolNoStart PageEnd PagePublication date
1Application of Random Telegraph Noise to Individual Authentication Technology Using Physical Unclonable Function (PUF) 71 2 23 26 2016 
2Investigation of Trap Mechanisms Causing Random Telegraph Noise in Ultra-Scaled MOSFETs 68 8 27 30 2013 
3High-reliability technology for metal gate/high-k gate dielectrics for advanced LSIs Toshiba review 65 7 28 32 2010 
4Study of Non-Volatile Memory Cell with Single-Crystal Floating Gate Electrode Proceedings of the IEICE General Conference 1996 2 296 296 Mar. 11, 1996 

　

Conference Activities & Talks  
No.ＴitleConferencePublication datePromoterVenue
1Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic Measurement 2024 IEEE International Reliability Physics Symposium (IRPS) Apr. 17, 2024 
2Study on Resistive Switching Mechanism in Metal/Graphene/Sumanene/Graphene/N+ Si Nonvolatile Memory 36th International Microprocesses and Nanotechnology Conference (MNC 2023) Nov. 17, 2023 
3Study on Interface Trap and Fixed Charge Generation under Channel Hot Carrier Stressing at Low Temperature Using Device Simulation 2023 International Meeting for Future of Electron Devices, Kansai Nov. 17, 2023 
4Demonstration of Resistive switching memory devices using Buckybowls Sumanene inserted Bilayer Graphene 36th International Microprocesses and Nanotechnology Conference (MNC 2023) Nov. 17, 2023 
5Degradation on nMOSFET and Interface Trap Creation under Channel Hot Carrier Stressing at Cryogenic Temperature International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - Oct. 24, 2023 
6Evaluation of the Effect of Plasma Oxidation and Nitriding on AlScN by AR-HAXPES International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - Oct. 24, 2023 
7Depassivation of Fluorine in Silicon Nitride Films by Hydrogen Radical Treatment Oct. 24, 2023 
8Impact of Plasma Nitridation on Resistive Switching in AlScN Ferroelectric Tunnel Junction Memory International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - Oct. 24, 2023 
9Reduction of Hydrogen Content in Silicon Nitride Films by Hydrogen Radical Annealing Workshop on Electron Device Interface Technology Feb. 4, 2023 
10Influences of O2 Plasma Treatment on AlScN Ferroelectric Tunnel Junction Workshop on Electron Device Interface Technology Feb. 3, 2023 
11Study on Fluorographene Charge Trapping layer for Nonvolatile Memory Applications The 2022 International Meeting for Future of Electron Devices, Kansai Nov. 29, 2022 
12Carrier trapping characteristics of fluorographene for nonvolatile memory applications 35th International Microprocesses and Nanotechnology Conference (MNC 2022) Nov. 10, 2022 
13Impact of Fluorine Incorporation on Reliabilities of SiO2 and SizNy Thin Films Oct. 21, 2021 
14Re-Consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities The 2021 IEEE Electron Devices Technology and. Manufacturing (EDTM) Conference Apr. 11, 2021 
15Advanced 3D Flash Memory Cell Technologies Jul. 10, 2020 
163D Flash Memory - Electrical and Physical Characterizations for Memory Cell Reliability 32nd IEEE International Conference on Microelectronic Test Structures (ICMTS) Mar. 18, 2019 
17Re-Investigation of Hydrogen Related Defect Generation in Gate Dielectric Interface and Bulk IEEE International Integrated Reliability Workshop Oct. 13, 2014 
1828p-G9-7 Siを金属化させるS原子ペアーの電子構造 Mar. 28, 2013 
194a-ZM-11 -Pbセンターと界面準位密度の関係- 第68回応用物理学会学術講演会 Sep. 4, 2007 

　

Awards & Honors  
No.Publication dateAssociationPrizeSubtitle
1Nov. 2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - Young Researcher Award Degradation on nMOSFET and Interface Trap Creation under Channel Hot Carrier Stressing at Cryogenic Temperature 
2Nov. 2017 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY – Young Award Experimental Evidence of Trap Level Modulation in SiN Thin Film by Hydrogen Annealing 
3Apr. 2017 IEEE International Conference on IC Design & Technology (ICICDT) Achievement Award 

　

Research Grants & Projects  
No.Offer organizationSystem nameTitleFund classificationDate
1Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C) Controls of nano defects in Silicon nitride films by using atomic hydrogen treatment  Apr. 2022 - Mar. 2025 

　

Industrial Property Rights  
No.TypeTitleApplicationIdApplicationDatePatentIdRegistration datePatentDate
1patent_right Individual identification device, storage device, individual identification system, method of individual identification, and program product   US9983818 May. 29, 2018   
2patent_right Information processing system and semiconductor device   US9794073 Oct. 17, 2017   
3patent_right Semiconductor device and method for manufacturing the same   US9755064 Sep. 5, 2017   
4patent_right Semiconductor device and method for manufacturing the same   US9698236 Jul. 4, 2017   
5patent_right Decoding device, decoding method, and memory system   US9672103 Jun. 6, 2017   
6patent_right Semiconductor device and reading method   US9665426 May. 30, 2017   
7patent_right Comparator, AD converter, and wireless communication device   US9584149 Feb. 28, 2017   
8patent_right Memory system   US9570181 Feb. 14, 2017   
9patent_right Semiconductor device with polycrystalline silicon film   US9530855 Dec. 27, 2016   
10patent_right Authentication device, authentication method, and computer program product   US9460316 Oct. 4, 2016   
11patent_right Memory system, control system and method of predicting lifetime   US9424927 Aug. 23, 2016   
12patent_right Nonvolatile semiconductor memory   US9349876 May. 24, 2016   
13patent_right Non-volatile variable resistive element, controlling device and storage device   US9349948 May. 24, 2016   
14patent_right Memory system and control method   US9286995 Mar. 15, 2016   
15patent_right Resistance change device and memory cell array   US9219229 Dec. 22, 2015   
16patent_right Semiconductor storage device for handling write to nonvolatile memories with data smaller than a threshold   US9164704 Oct. 20, 2015   
17patent_right Semiconductor circuit, D/A converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor   US9083423 Jul. 14, 2015   
18patent_right Error correction device, error correction method and computer program product   US9054739 Jun. 9, 2015   
19patent_right Information recording device and method of manufacturing the same   US9040949 May. 26, 2015   
20patent_right Resistance change device and memory cell array   US8916848 Dec. 23, 2014   
21patent_right Semiconductor device and method for manufacturing the same   US8860118 Oct. 14, 2014   
22patent_right Semiconductor memory device and method of controlling the same   US8717840 May. 6, 2014   
23patent_right Nonvolatile semiconductor memory apparatus   US8698313 Apr. 15, 2014   
24patent_right Nonvolatile semiconductor memory device and method for manufacturing the same   US8592892 Nov. 26, 2013   
25patent_right Method for manufacturing a semiconductor device   US8557717 Oct. 15, 2013   
26patent_right Semiconductor device including a gate insulating film having a metal oxide layer having trap levels,   US8476718 Jul. 2, 2013   
27patent_right Method of manufacturing semiconductor device   US8426302, Apr. 23, 2013   
28patent_right Semiconductor device and method for manufacturing the same   US8253190 Aug. 28, 2012   
29patent_right Semiconductor device and method for manufacturing the same   US8211811 Jul. 3, 2012   
30patent_right Nonvolatile semiconductor memory apparatus   US8154072 Apr. 10, 2012   
31patent_right Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device   US8093126 Jan. 10, 2012   
32patent_right Semiconductor device and method for manufacturing the same   US8053827 Nov. 8, 2011   
33patent_right Nonvolatile semiconductor memory device and method of manufacturing the same   US7985650 Jul. 26, 2011   
34patent_right Nonvolatile semiconductor memory apparatus   US7943984 May. 17, 2011   
35patent_right Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device   US7883967 Feb. 8, 2011   
36patent_right Semiconductor device and method for manufacturing the same   US7863119 Jan. 4, 2011   
37patent_right Method for manufacturing a semiconductor device   US7772129 Aug. 10, 2010   
38patent_right Semiconductor device and method for manufacturing the same   US7749919, Jul. 6, 2010   
39patent_right Semiconductor device and method of manufacturing same   US7728379 Jun. 1, 2010   
40patent_right Nonvolatile semiconductor memory device and method of manufacturing the same   S7619274 Nov. 17, 2009   
41patent_right Semiconductor device having an electrode containing boron and manufacturing method thereof   US7586163 Sep. 8, 2009   
42patent_right Semiconductor device and method of manufacturing the same   US7372113 May. 13, 2008   
43patent_right Nonvolatile semiconductor memory device and method of manufacturing the same   US7279737 Oct. 9, 2007   
44patent_right Semiconductor device and method of manufacturing the same   US7109103 Sep. 19, 2006   
45patent_right Semiconductor device and method of manufacturing the same   US7015121 Mar. 21, 2006   
46patent_right Semiconductor device and method of manufacturing the same   US6891238 May. 10, 2005   
47patent_right Semiconductor device and method of manufacturing the same   US6787433 Sep. 7, 2004   
48patent_right Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio   US6774462 Aug. 10, 2004   
49patent_right Method of manufacturing a semiconductor device with oxide mediated epitaxial layer   US6395621 May. 28, 2002   
50patent_right Semiconductor device with oxide mediated epitaxial layer   US6346732 Feb. 12, 2002   
51patent_right Semiconductor device and manufacturing method thereof   US6342421 Jan. 29, 2002   
52patent_right Apparatus and method of improving an insulating film on a semiconductor device   US6191463 Feb. 20, 2001   
53patent_right Semiconductor device with element isolation film   US6018185 Jan. 25, 2000   
54patent_right Semiconductor device and manufacturing method thereof   US5864161 Jan. 26, 1999